| Preface |
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xi | |
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Fundamental Concepts in Ultrahigh Vacuum, Surface Preparation, and Electron Spectroscopy |
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1 | (22) |
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1 | (1) |
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The Need for Ultrahigh Vacuum |
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2 | (2) |
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Achieving Ultrahigh Vacuum |
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4 | (3) |
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7 | (2) |
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Preparation of Clean Surfaces |
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9 | (1) |
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Need for Electron Spectroscopy |
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10 | (2) |
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Electron Scattering from Solid Surfaces |
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12 | (1) |
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Electron Energy Analyzers |
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13 | (6) |
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14 | (2) |
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Cylindrical Mirror Analyzer |
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16 | (1) |
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Concentric Hemispherical Analyzer |
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17 | (2) |
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19 | (4) |
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19 | (4) |
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Auger Electron Spectroscopy |
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23 | (22) |
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23 | (1) |
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24 | (2) |
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Sensitivity of Auger Electron Spectroscopy |
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26 | (1) |
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Energies and Shapes of Auger Peaks |
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27 | (1) |
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28 | (1) |
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Intensity of Auger Electron Emission |
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29 | (4) |
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33 | (1) |
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Scanning Auger Microprobe |
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33 | (2) |
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35 | (4) |
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Case Study: Surface Composition of a 5 at% Al-Fe Alloy |
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39 | (6) |
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40 | (5) |
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Photoelectron Spectroscopy |
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45 | (24) |
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One-Electron Description of the Photoelectric Effect |
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45 | (2) |
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47 | (3) |
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50 | (1) |
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51 | (1) |
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51 | (2) |
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Relaxation Shift and Multiplet Splitting |
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53 | (1) |
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Chemical Bonding on Surfaces |
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54 | (2) |
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56 | (4) |
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Extended X-Ray Absorption Fine Structure |
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60 | (2) |
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62 | (7) |
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Auger Electron and Photoelectron Forward Scattering |
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62 | (1) |
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Photoemission of Adsorbed Xenon |
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63 | (1) |
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64 | (5) |
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Inelastic Scattering of Electrons and lons |
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69 | (14) |
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One-Electron Excitation of Core and Valence Electrons |
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69 | (2) |
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71 | (1) |
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72 | (3) |
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Ion Scattering Spectroscopy |
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75 | (2) |
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Secondary Ion Mass Spectrometry |
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77 | (6) |
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80 | (3) |
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Low-Energy Electron Diffraction |
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83 | (18) |
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83 | (1) |
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83 | (2) |
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Naming Conventions for Surface Structures |
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85 | (2) |
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87 | (1) |
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Selected Properties of the Surface Reciprocal Space |
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88 | (1) |
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89 | (3) |
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Applications of the Kinematic Theory |
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92 | (9) |
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Determination of Real Space Lattice from LEED Pattern |
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92 | (1) |
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Angular Spread of Diffracted Beams |
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93 | (2) |
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95 | (1) |
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96 | (1) |
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97 | (1) |
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Appendix Diffraction Intensity as a Function of Temperature |
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98 | (3) |
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Scanning Probe Microscopy |
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101 | (18) |
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101 | (1) |
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102 | (1) |
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Review of Electron Tunneling |
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103 | (1) |
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104 | (2) |
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106 | (1) |
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107 | (5) |
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107 | (1) |
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107 | (2) |
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109 | (1) |
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110 | (1) |
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Data Acquisition and Analysis |
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111 | (1) |
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112 | (2) |
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High-Resolution Imaging of Surfaces |
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112 | (1) |
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113 | (1) |
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113 | (1) |
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114 | (1) |
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Limitations of STM and Solutions |
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114 | (1) |
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Scanning Capacitance Microscopy |
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115 | (1) |
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115 | (4) |
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116 | (1) |
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116 | (1) |
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117 | (2) |
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119 | (18) |
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119 | (1) |
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Gibbs Adsorption Equation |
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119 | (4) |
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123 | (1) |
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Surface Segregation in Binary Alloys |
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124 | (3) |
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Relationship Between Surface and Bulk Composition of Binary Alloys |
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127 | (2) |
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The Unified Segregation Model |
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129 | (2) |
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Surface Energy and Heat of Mixing |
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129 | (1) |
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130 | (1) |
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131 | (1) |
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Comparison with Experiment |
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131 | (1) |
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Environmental Effects on Surface Segregation |
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131 | (6) |
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133 | (4) |
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Metal-Semiconductor Interfaces |
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137 | (20) |
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137 | (4) |
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141 | (5) |
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141 | (3) |
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144 | (2) |
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Work Function Measurements |
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146 | (2) |
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147 | (1) |
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147 | (1) |
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Retarding Field Technique |
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148 | (1) |
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The Metal-Semiconductor Interface |
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148 | (9) |
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148 | (4) |
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Surface States and the Defect Model |
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152 | (1) |
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153 | (1) |
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153 | (3) |
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Appendix Useful Information for Semiconductors |
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156 | (1) |
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157 | (24) |
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157 | (2) |
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159 | (8) |
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The Langmuir Adsorption Isotherm |
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167 | (5) |
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167 | (3) |
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170 | (1) |
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Effect on Surface Tension |
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171 | (1) |
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172 | (1) |
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Promoters, Poisons, and Ensemble Effects |
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172 | (1) |
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173 | (1) |
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174 | (7) |
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Strong Metal-Support Interaction |
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174 | (3) |
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177 | (1) |
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178 | (3) |
| Index |
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181 | |