| Preface |
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v | (2) |
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| Dedication - Professor Sir Nevill Mott |
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vii | (2) |
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| Dedication - Academician Gueorgi Nadjakoff |
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ix | (2) |
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| Dedication - Academician Milko Borissov |
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xi | |
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| PART 1: INVITED REVIEWS |
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1 | (304) |
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Microcrystalline Silicon I: Growth and structural properties (Gueorgi Nadjakoff Lecture) |
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1 | (10) |
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Microcrystalline Silicon II: Electrical and optical properties (Milko Borissov Lecture) |
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11 | (12) |
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Theoretical investigations of models for the electronic transport in microcrystalline silicon films |
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23 | (9) |
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Einstein relation for hopping electrons |
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32 | (8) |
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Random walk approach to the glass transition and relaxations in super-cooled melts |
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40 | (6) |
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Luminescence from rare earth containing Langmuir-Blodgett films |
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46 | (8) |
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Visible luminescence from Si and Ge nanocrystals |
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54 | (8) |
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Optical designs of thin film multi layered structure photovoltaic devices |
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62 | (9) |
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Conductivity fluctuations in amorphous semiconductors |
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71 | (9) |
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Photoconductive properties of hydrogenated amorphous semiconductors |
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80 | (9) |
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Critical comments to mobility and mobility-lifetime product in a-Si:H |
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89 | (7) |
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Transient photoconductivity study of localised-state distributions in highly resistive semiconductor thin films |
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96 | (8) |
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Space-charge-limited-current spectroscopy: possibilities and limitations |
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104 | (8) |
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Amorphous silicon X-ray detectors |
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112 | (8) |
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Properties of stabilized amorphous selenium for x-ray image detector applications |
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120 | (8) |
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The relationship between oxygen related defect centres and room temperature red photoluminescence in nanocrystalline (porous) silicon |
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128 | (8) |
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Laser processing of thin film materials and devices |
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136 | (8) |
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A theoretical study of oligothiophene polarons |
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144 | (8) |
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A theoretical study of the metallisation of polyacetylene with aluminium |
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152 | (8) |
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Diamond like carbon field emission displays |
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160 | (6) |
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Hollow cathode deposition of CN films |
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166 | (9) |
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Gate dielectric films for future silicon and silicon-carbide technologies |
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175 | (8) |
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Semiconducting and metallic silicide thin films |
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183 | (9) |
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The ion beam assistance in thin film deposition |
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192 | (8) |
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Electromigration, can we understand it? |
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200 | (9) |
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Inelastic electron tunnelling spectroscopy (IETS): principles, applications and future directions |
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209 | (9) |
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Photoinduced anisotropies in chalcogenide thin films |
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218 | (8) |
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Optical properties of amorphous Se films prepared by PECVD |
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226 | (8) |
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Photoinduced effects and metastability in organopolysilane films |
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234 | (8) |
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Reversible photo-induced effects in amorphous semiconductor films |
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242 | (8) |
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Statistical process control on passivation schemes for VLSI technology |
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250 | (8) |
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Short-range order structure of ultra thin films and nanoclusters studied by EXAFS |
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258 | (7) |
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Some technological problems in the development of heterostructures for electronic devices based on III-V nitrides |
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265 | (7) |
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The oxidation of the perfect Si(100) surface. Ab Initio periodic pseudopotential Hartree-Fock calculations |
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272 | (9) |
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VPE(CVD) and LPE layers of A(3)B(5) solid solutions for optoelectronic devices |
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281 | (8) |
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Neutron investigations of surfaces and thin films |
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289 | (8) |
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Breakdown characteristics of irradiated and post-irradiation annealed gate oxides |
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297 | (8) |
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| PART 2: CONTRIBUTED PAPERS |
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305 | (288) |
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Lateral photoeffect in an XXX-Si:H position sensitive photodetector |
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305 | (4) |
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Thickness and deposition temperature dependence of optical properties of a-Si:H films deposited on different substrates |
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309 | (4) |
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Waveguide components made from side-polished fibre and a-Si:H films |
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313 | (4) |
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Amorphous silicon suboxide light emitting diodes |
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317 | (4) |
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Optical and structural effects of Co(+) implantation in a-Si(1-x) C(x):H thin films |
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321 | (4) |
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Steady-state photoconductivity in amorphous silicon-germanium alloys |
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325 | (4) |
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Forward current transients in a-Si:C:H p-i-n diodes |
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329 | (4) |
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Light soaking in a-Si:H at different temperatures and its effects on the steady state photoconductivity |
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333 | (4) |
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Photo-induced effects on capacitance measurements of a-Se and a-Si:H thin films: a model of photodegradation |
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337 | (4) |
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In-situ scanning tunnelling microscopy study of hydrogenated amorphous silicon |
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341 | (4) |
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Properties of NH(3) N(2)O and O(2) plasma treated silicon surfaces |
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345 | (4) |
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Conductivity of partially oxidized porous silicon layers |
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349 | (4) |
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Photovoltaic and electroluminescent properties of porous silicon-ZnO heterostructures |
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353 | (4) |
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Photoluminescence spectra of porous silicon versus anodization conditions |
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357 | (4) |
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Atomic force microscopy investigation of Zn(+) -implanted Si at high doses |
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361 | (4) |
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XPS study of thin thermal SiO(2) layers after rapid thermal annealing in vacuum |
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365 | (4) |
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Thin films of SiO(x) doped with CdSe nanocrystals |
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369 | (4) |
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Damage induced by MeV-electron irradiation of boron-implanted Si-SiO(2) structures: a deep-level transient spectroscopy study |
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373 | (4) |
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CVD grown Si SiC based multilayer structures |
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377 | (4) |
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Aggregation and energy transfer in Langmuir and Langmuir-Blodgett films from a fluorescently labeled phospholipid |
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381 | (4) |
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Gradual formation of the equilibrium state in thin Ge-As-S films |
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385 | (4) |
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The effect of the properties of protective chalcogenide films on the brightness of AC EL structures |
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389 | (4) |
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Photoinduced changes in thin As-S-I films |
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393 | (4) |
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Photoinduced changes in the optical properties of chalcogenide and chalcohalide glasses |
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397 | (4) |
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Dissolution of As(2)S(3) evaporated layers - an electrochemical study |
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401 | (4) |
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Au(+) ion-irradiated layers of chalcogenide glasses |
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405 | (4) |
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Photoinduced optical anisotropy in a-As(x)S(100-x) thin films |
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409 | (4) |
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Electron microprobe analysis of chalcogenide thin films |
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413 | (4) |
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Reflecting structures recorded in dichromated gelatin sensitised for red light recordings |
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417 | (4) |
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Dye-polymer systems with nonlinear optical properties, sensitive in the red spectral region |
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421 | (4) |
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Thin films of acryl-type copolymers with side-chain azobenzene chromophores for polarization optical recording |
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425 | (4) |
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Structuring of hard coatings on polymer substrates |
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429 | (4) |
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Vacuum deposited polyimide-aluminium composites |
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433 | (4) |
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Characterisation of thin vacuum deposited polyimide layers |
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437 | (4) |
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Polymer corona electrets stored at various relative humidities |
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441 | (4) |
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Carrier mobility and scattering mechanisms in thin Ta(2)O(5) - Si structures |
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445 | (4) |
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Thermally oxidised Ta(2)O(5) films on Si-dielectric and breakdown characteristics |
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449 | (4) |
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Rapid thermal annealing of PECVD silicon nitride films |
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453 | (4) |
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XPS study of excimer laser treated annealed alumina films on Si substrates |
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457 | (4) |
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Electroluminescence from SiO(2):C sputtered thin films |
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461 | (4) |
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Microstructure and related properties of vapour deposited amorphous Al(2)O(3) thin films |
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465 | (4) |
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Electrical and dielectric properties of thin r.f. sputtered TiO(2) vs. deposition conditions |
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469 | (4) |
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Characterization of doped SnO(2) thin films |
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473 | (4) |
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Some properties of the quartz-Al system after rapid thermal annealing |
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477 | (4) |
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Preparation, characterisation and performance of electrochromic windows, based on tungsten oxide and polyaniline |
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481 | (4) |
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Composition, structure and corrosion resistance of arc-evaporated Ti-N thin films |
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485 | (4) |
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Diffusion-processes in layers obtained by co-evaporation of TeO(2) and Sn |
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489 | (4) |
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Barium titanate thin films: R.F. sputtering and properties |
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493 | (4) |
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Magnetoresistance behaviour of La-Ca-Mn-O thin films deposited by magnetron sputtering on MgO (001) substrates |
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497 | (4) |
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Transport a.c. losses of nonofilament Ag Bi-2223 tapes at 77K |
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501 | (4) |
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Optical properties of new glasses containing SeO(2), MoO(3), ScO(3) and Pr(2)O(3) |
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505 | (3) |
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Kinetics of atomic arrangements in an amorphous Zr(60)Ni(25)Al(15) alloy studied by nonisothermal viscous flow and crystallisation |
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508 | (4) |
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Ion beam-assisted deposition of thin cobalt films onto air-cleaved rock salt |
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512 | (4) |
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Electrochemical deposition of CulnSe(2) thin films on Mo substrates |
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516 | (4) |
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Phase transitions in amorphous selenium films induced by excimer laser irradiation |
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520 | (4) |
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Microstructure and related properties of obliquely deposited amorphous ZrO(2) thin films |
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524 | (4) |
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The influence of annealing on the optical properties of amorphous Sb(2)Se(3) thin films |
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528 | (4) |
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Applications of electrochemically deposited II-VI compound layers |
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532 | (4) |
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Low temperature liquid phase epitaxial growth of InAsSb-InAs heterostructures |
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536 | (4) |
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A new first order transition in very thin magnets |
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540 | (4) |
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The rate of energy transfer between long wavelength pigments in isolated photosystem I particles |
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544 | (4) |
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Stark effect in rectangular and graded composition quantum wells: a tight binding calculation |
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548 | (4) |
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Sol-Gel TiO(2) coatings from an acetate-acetylacetonate solution |
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552 | (4) |
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Optimisation of the magnetic system for an unbalanced d.c. magnetron sputtering system of type II |
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556 | (4) |
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YFeO(3) thin films - preparation by "in situ" spray pyrolysis and some characteristics |
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560 | (4) |
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A new application of polyimide films in optical waveguide fabrication |
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564 | (4) |
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Optical properties of thin fullerine layers |
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568 | (4) |
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Carbon layered structures |
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572 | (4) |
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DC electrical conductivity of gamma radiation modified ion-implanted carbon in a polymer matrix |
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576 | (4) |
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Magnetic and discharge characteristics of a planar unbalanced magnetron system |
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580 | (4) |
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Optical FWM and molecular dipoles |
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584 | (4) |
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Gas discharge characteristics during the reactive magnetron sputtering of aluminium in an Ar N(2) mixture |
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588 | (5) |
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| Subject Index |
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593 | |
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