(0) items

Note: Supplemental materials are not guaranteed with Rental or Used book purchases.
Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications,9781118313527
This item qualifies for

Your order must be $59 or more, you must select US Postal Service Shipping as your shipping preference, and the "Group my items into as few shipments as possible" option when you place your order.

Bulk sales, PO's, Marketplace Items, eBooks, Apparel, and DVDs not included.

Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications

by ;


Pub. Date:
Wiley-IEEE Press
List Price: $160.00

Rent Textbook


Buy New Textbook

Usually Ships in 3-4 Business Days

Used Textbook

We're Sorry
Sold Out


We're Sorry
Not Available

More New and Used
from Private Sellers
Starting at $143.83

Questions About This Book?

Why should I rent this book?
Renting is easy, fast, and cheap! Renting from can save you hundreds of dollars compared to the cost of new or used books each semester. At the end of the semester, simply ship the book back to us with a free UPS shipping label! No need to worry about selling it back.
How do rental returns work?
Returning books is as easy as possible. As your rental due date approaches, we will email you several courtesy reminders. When you are ready to return, you can print a free UPS shipping label from our website at any time. Then, just return the book to your UPS driver or any staffed UPS location. You can even use the same box we shipped it in!
What version or edition is this?
This is the 1st edition with a publication date of 3/17/2014.
What is included with this book?
  • The New copy of this book will include any supplemental materials advertised. Please check the title of the book to determine if it should include any CDs, lab manuals, study guides, etc.
  • The Rental copy of this book is not guaranteed to include any supplemental materials. You may receive a brand new copy, but typically, only the book itself.


A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications

Based on a number of breakthroughs in SiC growth and technologies done in the 1980s and 1990s, the world-first Schottky barrier diodes (SBDs) were released as commercial products in 2001. Since then the SiC SBD market has grown remarkably and the diodes have been implemented into a variety of power supplies, including motor control and air conditioners. In this wide-ranging book, the authors draw on their considerable experience in this field to present an introduction to SiC applications, as well as providing a useful reference for those already working in this fast-moving technology. Fundamentals of Silicon Carbide Technology introduces the basic properties of SiC materials as well as the fundamental technologies of SiC devices. The main topics include the physical properties, bulk and epitaxial growth, characterization of electrical and optical properties, extended and point defects, device processing, design and fabrication of devices, and applications of SiC devices.

  • A complete introduction to the fundamental aspects of silicon carbide (SiC) materials science, processes, devices and power systems
  • Covers applications such as power supplies, motor control, photovoltaic converters, high-voltage converters/inverters, radar, wireless communication, high-temperature electronics and sensors
  • The proliferation of SiC power devices will contribute to less environmental pollution and the conservation of fossil fuels through its energy saving properties
  • Fully illustrated throughout, and written by acknowledged experts with over 20 years’ experience in SiC research

Ideal for Graduate students and researchers in semiconductor devices, sensor design, high temperature electronics and power electronics, electronic material properties, and crystal growth.

Please wait while the item is added to your cart...