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A unified presentation of the analysis and design of microwave transistor amplifiers (and oscillators) using scattering parameters techniques.KEY FEATURES:Presents material on: transmission-lines concepts; power waves and generalized scattering parameters; measurements of scattering parameters; bipolar and field-effect transistors; power gain expressions; constant VSWR circles; gain, noise, and VSWR design trade offs; broadband amplifiers, high-power amplifiers; oscillator
Table of Contents
Preface. 1. Representations of Two-Port Networks. 2. Matching Networks and Signal Flow Graphs. 3. Microwave Transistor Amplifier Design. 4. Noise, Broadband, and High-Power Design Methods. 5. Microwave Transistor Oscillator Design. Appendix: Computer-Aided Designs. Appendix A: A. 1. Circle Equations: Bilinear Transformation, A. 2. Derivation of the Input and Output Stability Circles. Appendix B: Stability Conditions. Appendix C: Unconditional Stability Conditions. Appendix D: Derivation of the Unilateral Constant- Gain Circles. Appendix E: E. 1. Analysis of (3.65) and (3.6.6) for ..., E. 2. Condition for a Simultaneous Conjugate Match. Appendix F: Derivation of Gt, max. Appendix G: Derivation of the Constant Operating Power-Gain Circles. Appendix H: Expressions for ml. Appendix I: Constant VSWR Circles. Appendix J: Mapping of Circles. Appendix K: Noise Concepts. Appendix L: Noise Figure of an Amplifier, Appendix M: Conditions for a Stable Oscilllation. Index.