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Semiconductor Physics and Devices,9780073529585
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Semiconductor Physics and Devices

by
Edition:
4th
ISBN13:

9780073529585

ISBN10:
0073529583
Format:
Hardcover
Pub. Date:
1/18/2011
Publisher(s):
McGraw-Hill Science/Engineering/Math
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Summary

With its strong pedagogy, superior readability, and thorough examination of the physics of semiconductor material, Semiconductor Physics and Devices, 4/eprovides a basis for understanding the characteristics, operation, and limitations of semiconductor devices. Neamen's Semiconductor Physics and Devicesdeals with the electrical properties and characteristics of semiconductor materials and devices. The goal of this book is to bring together quantum mechanics, the quantum theory of solids, semiconductor material physics, and semiconductor device physics in a clear and understandable way.

Table of Contents

Part I Semiconductor Material Properties

Chapter 1: The Crystal Structure of Solids

Chapter 2: Introduction to Quantum Mechanics

Chapter 3: Introduction to the Quantum Theory of Solids

Chapter 4: The Semiconductor in Equilibrium

Chapter 5: Carrier Transport Phenomena

Chapter 6: Nonequilibrium Excess Carriers in Semiconductors

Part II Fundamental Semiconductor Devices

Chapter 7: The pn Junction

Chapter 8: The pn Junction Diode

Chapter 9: Metal-Semiconductor and Semiconductor Heterojunctions

Chapter 10: Fundamentals of the Metal-Oxide-Semiconductor Field-Effect Transistor

Chapter 11: Metal-Oxide-Semiconductor Field-Effect Transistor: Additional Concepts

Chapter 12: The Bipolar Transistor

Chapter 13: The Junction Field-Effect Transistor

Part III Specialized Semiconductor Devices

Chapter 14: Optical Devices

Chapter 15: Semiconductor Microwave and Power Devices

Appendix A: Selected List of Symbols

Appendix B: System of Units, Conversion Factors, and General Constants

Appendix C: The Periodic Table

Appendix D: Unit of Energy-The Electron-Volt

Appendix E: "Derivation" of Schrodinger's Wave Equation

Appendix F: Effective Mass Concepts

Appendix G: The Error Function

Appendix H: Answers to Selected Problems



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