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Dr Hiroshi Ishikawa, Tsukuba, Japan
Dr Ishikawa is the Director of the Ultrafast Photonic Devices Laboratory in National Institute of Advanced Industrial Science and Technology (AIST) in Japan. He worked for research and development of optical semiconductor devices in Fujitsu Labs Ltd from 1972 to 2001. In 2001 he moved to Femtosecond Technology Research Association Central Res. Lab. as a group leader of ultrafast all-optical switching devices. He is at AIST since 2004. He is a member of Japan Society of Applied Physics, The Physical Society of Japan, The Institute of Electronics, Information and Communication Engineers, and IEEE (Fellow).
Contributors | p. ix |
Preface | p. xi |
Introduction | p. 1 |
Evolution of Optical Communication Systems and Device Technologies | p. 1 |
Increasing Communication Traffic and Power Consumption | p. 2 |
Future Networks and Technologies | p. 4 |
Future Networks | p. 4 |
Schemes for Huge Capacity Transmission | p. 5 |
Ultrafast All-Optical Signal Processing Devices | p. 6 |
Challenges | p. 6 |
Basics of the Nonlinear Optical Process | p. 7 |
Overview of the Devices and Their Concepts | p. 11 |
Summary | p. 13 |
References | p. 13 |
Light Sources | p. 15 |
Requirement for Light Sources | p. 15 |
Optical Short Pulse Source | p. 16 |
Optical Time Division Multiplexer | p. 19 |
Mode-locked Laser Diodes | p. 20 |
Active Mode Locking | p. 20 |
Passive Mode Locking | p. 23 |
Hybrid Mode Locking | p. 25 |
Optical Synchronous Mode Locking | p. 27 |
Application for Clock Extraction | p. 29 |
Electro-absorption Modulator Based Signal Source | p. 30 |
Overview of Electro-absorption Modulator | p. 30 |
Optical Short Pulse Generation Using EAM | p. 33 |
Optical Time Division Multiplexer Based on EAMs | p. 38 |
160-Gb/s Optical Signal Generation | p. 41 |
Detection of a 160-Gb/s OTDM Signal | p. 43 |
Transmission Issues | p. 46 |
Summary | p. 47 |
References | p. 47 |
Semiconductor Optical Amplifier Based Ultrafast Signal Processing Devices | p. 53 |
Introduction | p. 53 |
Fundamentals of SOA | p. 53 |
SOA as an Ultrafast Nonlinear Medium | p. 56 |
Use of Ultrafast Response Component by Filtering | p. 57 |
Theoretical Background | p. 57 |
Signal Processing Using the Fast Response Component of SOA | p. 60 |
Symmetric Mach-Zehnder (SMZ) All-Optical Gate | p. 64 |
Fundamentals of the SMZ All-Optical Gate | p. 64 |
Technology of Integrating Optical Circuits for an SMZ All-Optical Gate | p. 67 |
Optical Demultiplexing | p. 68 |
Wavelength Conversion and Signal Regeneration | p. 73 |
Summary | p. 83 |
References | p. 83 |
Uni-traveling-carrier Photodiode (UTC-PD) and PD-EAM Optical Gate Integrating a UTC-PD and a Traveling Wave Electro-absorption Modulator | p. 89 |
Introduction | p. 89 |
Uni-traveling-carrier Photodiode (UTC-PD) | p. 91 |
Operation | p. 91 |
Fabrication and Characterization | p. 96 |
Characteristics of the UTC-PD | p. 98 |
Photo Receivers | p. 114 |
Concept of a New Opto-electronic Integrated Device | p. 117 |
Importance of High-output PDs | p. 117 |
Monolithic Digital OEIC | p. 118 |
Monolithic PD-EAM Optical Gate | p. 118 |
PD-EAM Optical Gate Integrating UTC-PD and TW-EAM | p. 119 |
Basic Structure | p. 119 |
Design | p. 120 |
Optical Gating Characteristics of PD-EAM | p. 123 |
Fabrication | p. 125 |
Gating Characteristics | p. 127 |
Applications for Ultrafast All-Optical Signal Processing | p. 131 |
Future Work | p. 143 |
Summary and Prospects | p. 147 |
References | p. 148 |
Intersub-band Transition All-Optical Gate Switches | p. 155 |
Operation Principle | p. 155 |
Transition Wavelength | p. 156 |
Matrix Element | p. 157 |
Saturable Absorption | p. 157 |
Absorption Recovery Time | p. 158 |
Dephasing Time and Spectral Linewidth | p. 160 |
Gate Operation in Waveguide Structure | p. 162 |
GaN/AlN ISBT Gate | p. 164 |
Absorption Spectra | p. 165 |
Saturation of Absorption in Waveguides | p. 168 |
Ultrafast Optical Gate | p. 170 |
(CdS/ZnSe)/BeTe ISBT Gate | p. 172 |
Growth of CdS/ZnSe/BeTe QWs and ISBT Absorption Spectra | p. 173 |
Waveguide Structure for a CdS/ZnSe/BeTe Gate | p. 177 |
Characteristics of a CdS/ZnSe/BeTe Gate | p. 181 |
InGaAs/AlAs/AlAsSb ISBT Gate | p. 183 |
Device Structure and its Fabrication | p. 183 |
Saturation Characteristics and Time Response | p. 184 |
Cross-phase Modulation in an InGaAs/AlAs/AlAsSb-based ISBT Gate | p. 186 |
Cross-phase Modulation Effect and its Mechanisms | p. 187 |
Application to Wavelength Conversion | p. 192 |
Summary | p. 195 |
References | p. 196 |
Wavelength Conversion Devices | p. 201 |
Introduction | p. 202 |
Wavelength Conversion Schemes | p. 202 |
Optical Gate Switch Type | p. 202 |
Coherent Type Conversion | p. 204 |
Physics of Four-wave Mixing in LDs or SOAs | p. 205 |
Model | p. 205 |
Asymmetrix X[superscript (3)] for Positive and Negative Detuning | p. 210 |
Symmetric X[superscript (3)] in Quantum Dot SOAs | p. 212 |
Wavelength Conversion of Short Pulses Using FWM in Semiconductor Devices | p. 214 |
Model | p. 214 |
The Effect of the Stop Band in DFB-LDs | p. 217 |
The Effect of the Depletion of Gain | p. 218 |
The Pulse Width Broadening in FWM Wavelength Conversion | p. 219 |
Experimental Results of Wavelength Conversion Using FWM in SOAs or LDs | p. 220 |
Wavelength Conversion of Short Pulses Using a DFB-LD | p. 220 |
Wavelength Conversion of 160-Gb/s OTDM Signal Using a Quantum Dot SOAs | p. 221 |
Format-free Wavelength Conversion | p. 222 |
Chromatic Dispersion Compensation of Optical Fibers Using FWM in DFB-LDs | p. 224 |
The Future View of Wavelength Conversion Using FWM | p. 225 |
Summary | p. 226 |
References | p. 226 |
Summary and Future Prospects | p. 231 |
Introduction | p. 231 |
Transmission Experiments | p. 231 |
FESTA Experiments | p. 231 |
Test Bed Field Experiment | p. 235 |
Recent Transmission Experiments above 160-Gb/s | p. 236 |
Requirements on Devices and Prospects | p. 238 |
Devices Described in this Book | p. 238 |
Necessity for New Functionality Devices and Technology | p. 240 |
Summary | p. 241 |
References | p. 242 |
Index | p. 243 |
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