Gallium Nitride Materials and Devices

by ; ; ;
  • ISBN13:


  • ISBN10:


  • Format: Paperback
  • Copyright: 2006-02-10
  • Publisher: Society of Photo Optical
  • Purchase Benefits
  • Free Shipping On Orders Over $35!
    Your order must be $35 or more to qualify for free economy shipping. Bulk sales, PO's, Marketplace items, eBooks and apparel do not qualify for this offer.
  • Get Rewarded for Ordering Your Textbooks! Enroll Now
List Price: $80.00
We're Sorry.
No Options Available at This Time.


Proceedings of SPIE present the original research papers presented at SPIE conferences and other high-quality conferences in the broad-ranging fields of optics and photonics. These books provide prompt access to the latest innovations in research and technology in their respective fields. Proceedings of SPIE are among the most cited references in patent literature.

Table of Contents

TEM studies of laterally overgrown GaN layers grown in polar and non-polar and non-polar directions
Effects of growth interruption time on InGaN/GaN quantum dots size grown by metal organic chemical vapor deposition
Growth of GaN on patterned GaN/sapphire substrates with various metallic masks by high pressure solution method
Investigation of the strain distribution of GaN/AlN wurtzite structure material self-organized truncated pyramid shaped quantum dot
Quantum-structure dependent excitonic carrier dynamics of In[subscript x]Ga[subscript 1-x]N/GaN multi-quantum-wells
Microscopic emission properties of nonpolar a-plane GaN grown by HVPE
Growth of bulk GaN by HVPE on pressure grown seeds
Growth and characterization of AlInN/GaInN quantum wells for high-speed intersubband devices at telecommunication wavelengths
Cathodoluminescence study of GaN and GaN:Si on sapphire
Characterization of GaN epitaxial films grown on SiN[subscript x] and TiN[subscript x] porous network templates
Structural and optical characterization of wurtzite Al[subscript 0.8]In[subscript 0.2]N thin films grown by low temperature magnetron sputter epitaxy
Growth and characterization of AlGaN/GaN epitaxial layers by MOCVD on SiC substrates for RF device applications
Synthesis of nanoporous GaN crystalline particles by chemical vapor deposition
Polarization management techniques for enhanced vertical and lateral transport in III-nitride superlattices
Studies of electron trapping in III-nitride semiconductors
Direction dependent homoepitaxial growth and bandgap of GaN nanowires
Conductive atomic force microscopy study of MBE GaN films
Very low dislocation density AlN substrates for device applications
Review of recent efforts on the growth and characterization of nitride-based diluted magnetic semiconductors
Investigation of band gaps and bowing parameters for zincblende III-nitride ternary alloys
Surface spatial profiles of defects in GaN
Hydrostatic pressure : a unique tool in studies of quantum structures and light emitting devices based on group-III nitrides
Etched facet technology for GaN and blue lasers
Recovery of GaN surface after reactive ion etching
Solar-blind AlGaN 256x256 p-l-n detectors and focal plane arrays
Ferroelectric PZT/AlGaN/GaN field effect transistors
Deep UV AlGaN light emitting diodes grown by gas source molecular beam epitaxy on sapphire and AlGaN/sapphire substrates
Gd-implanted GaN as a candidate for spin injector
High reflectivity and thermal-stability Cr-based reflectors and n-type ohmic contact for GaN-based flip-chip light-emitting diodes
Applications of transparent Al-doped ZnO contact on GaN-based power LED
Increase of output power and lifetime by improving the heat dissipation of GaN-based laser diodes
Table of Contents provided by Blackwell. All Rights Reserved.

Rewards Program

Write a Review