Narrow Gap Semiconductors 2007 : Proceedings of the 13th International Conference, 8-12 July, 2007, Guildford, UK

by Murdin, B. N.

• ISBN13: 9781402084249
• ISBN10: 1402084242
• eBook ISBN(s): 9781402084256
• Edition: 1st
• Format: Hardcover
• Copyright: 2008-06-01
• Publisher: SPRINGER
• More Book Details

Summary

Narrow gap semiconductors have provided an exciting field of research and show a number of extreme physical and material characteristics. They are the established material systems for infrared detectors and emitters, and with new developments in the technology these materials are emerging as a viable route to high speed, low power electronics. New kinds of narrow gap semiconductor, such as graphene and other composite nanocrystals, are also providing renewed interest in the underlying physics. The Thirteenth International Conference on Narrow Gap Semiconductors (NGS-13) was held at the University of Surrey, Guildford, UK in July 2007. The conference brought together experts and young scientists to discuss the latest findings and developments in the field. This book contains the invited and contributed papers which were presented at this meeting and serves to provide a broad overview of the current worldwide activities in narrow gap semiconductor research. The subjects covered are theoretical and material physics of narrow gap semiconductors and quantum heterostructures, spin related phenomenon including carrier dynamics and magnetotransport, carbon nanotubes and graphene as novel narrow gap material, as well as device physics including transistors, mid and far-infrared lasers and detectors.

Table of Contents

Spin-Related Phenomena
Gate Dependence of Spin-Splitting in an InSb/InAlSb Quantum Well	p. 3
Photogalvanic Effects in HgTe Quantum Wells	p. 7
Magnetic and Structural Properties of Ferromagnetic GeMnTe Layers	p. 11
Control and probe of Carrier and Spin Relaxations in InSb Based Structures	p. 15
Density and Well-Width Dependence of the Spin Relaxation in n-InSb/AlInSb Quantum Wells	p. 19
Dependence of Layer Thickness on Magnetism and Electrical Conduction in Ferromagnetic (In,Mn)As/GaSb Heterostructures	p. 23
Temperature Dependence of the Electron Lande g-Factor in InSb	p. 27
Anomalous Spin Splitting of Electrons in InSb type-II Quantum Dots in an InAs Matrix	p. 31
Measurement of the Dresselhaus and Rashba Spin-Orbit Coupling Via Weak Anti-Localization in InSb Quantum Wells	p. 35
Growth, Fabrication, Characterisation and Theory
Picosecond Carrier Dynamics in Narrow-Gap Semiconductors Studied by Terahertz Radiation Pulses	p. 41
Band Structure of InSbN and GaSbN	p. 45
Growth and Characterisation of Dilute Antimonide Nitride Materials for Long Wavelength Applications	p. 49
Electron Interband Breakdown in a Kane Semiconductor With a Degenerate Hole Distribution	p. 53
InMnAs Quantum Dots: a Raman Spectroscopy Analysis	p. 57
Conduction Band States in AlP/GaP Quantum Wells	p. 61
Growth of InAsSb Quantum Wells by Liquid Phase Epitaxy	p. 65
Diode Lasers for Free Space Optical Communications Based on InAsSb/InAsSbP Grown by LPE	p. 69
Epitaxial Growth and Characterization of PbGeEuTe Layers	p. 73
Monte Carlo Simulation of Electron Transport in PbTe	p. 77
L-Band-Related Interband Transition in InSb/GaSb Self-Assembled Quantum Dots	p. 81
Antimony Distribution in the InSb/InAs QD Heterostructures	p. 85
Transport Properties of InAs[subscript 0.1]Sb[subscript 0.9] Thin Films Sandwiched by Al[subscript 0.1]In[subscript 0.9]Sb Layers Grown on GaAs(100) Substrates by Molecular Beam Epitaxy	p. 89
Modelling of Photon Absorption and Carrier Dynamics in HgCdTe Under mid-IR Laser Irradiation	p. 93
Monte Carlo Study of Transport Properties of InN	p. 97
New Type of Combined Resonance in p-PbTe	p. 101
Carbon Nanotubes and Graphene
Theory of Third-Order Optical Susceptibility of Single-Wall Carbon Nanotubes With Account of Coulomb Interaction	p. 107
Unveiling the Magnetically Induced Field-Effect in Carbon Nanotubes Devices	p. 111
Transient Zitterbewegung of Electrons in Graphene and Carbon Nanotubes	p. 115
Cross-Polarized Exciton Absorption in Semiconducting Carbon Nanotubes	p. 119
Nanocrystals and Nanowires
Self-Assembled InSb/InAs Quantum Dots for the Mid-Infrared Spectral Range 3-4 [mu]m	p. 125
InSb/InAs Nanostructures Grown by Molecular Beam Epitaxy Using Sb[subscript 2] and As[subscript 2] Fluxes	p. 129
Electronic Devices
Performance Evaluation of Conventional Sb-based Multiquantum Well Lasers Operating Above 3[mu]m at Room Temperature	p. 135
Electroluminescence From Electrically Pumped GaSb-Based VCSELs	p. 139
Wavelength Tunable Resonant Cavity Enhanced Photodetectors Based on Lead-Salts Grown by MBE	p. 143
Farfield Measurements of Y-Coupled Quantum Cascade Lasers	p. 147
Impact of Doping Density in Short-Wavelength InP-Based Strain- Compensated Quantum-Cascade Lasers	p. 151
Magnetic Field Effects in InSb/Al[subscript x]In[subscript 1-x]Sb Quantum-Well Light-Emitting Diodes	p. 155
Electroluminescence from InSb-Based Mid-Infrared Quantum Well Lasers	p. 159
InAs Quantum Hot Electron Transistor	p. 163
Easy-to-Use Scalable Antennas for Coherent Detection of THz Radiation	p. 167
Single Photon Detection in the Long Wave Infrared	p. 171
High-Performance Fabry-Perot and Distributed-Feedback Interband Cascade Lasers	p. 177
Mid-Infrared Lead-Salt VECSEL (Vertical External Cavity Surface Emitting Laser) for Spectroscopy	p. 183
Optically Pumped GaSb-Based VECSELs	p. 187
Magneto-Transport and Magneto-Optics
Cyclotron Resonance Photoconductivity of a Two-Dimensional Electron Gas in HgTe Quantum Wells	p. 195
Extrinsic Electrons and Carrier Accumulation in Al[subscript x]In[subscript 1-x]Sb/InSb Quantum Wells: Well-Width Dependence	p. 199
Negative and Positive Magnetoresistance in Variable-Range Hopping Regime of Undoped Al[subscript x]In[subscript 1-x]Sb/InSb Quantum Wells	p. 203
Semimetal-Insulator Transition in Two-Dimensional System at the Type II Broken-Gap InAs/GaInAsSb Single Heterointerface	p. 209
Magnetoexcitons in Strained InSb Quantum Wells	p. 213
Table of Contents provided by Blackwell. All Rights Reserved.