Compound Semiconductors 1998: Proceedings of the Twenty-Fifth International Symposium on Compound Semiconductors held in Nara, Japan, 12-16 October 1998

by Sakaki; H

• ISBN13: 9780750306119
• ISBN10: 0750306114
• Edition: 1st
• Format: Hardcover
• Copyright: 1999-01-01
• Publisher: CRC Press

Summary

Compound Semiconductors 1998 explores research and development in key semiconductor materials and III-V compounds such as gallium arsenide, indium phosphide, gallium nitride, silicon germanium, and silicon carbide. It critically assesses progress in key technologies such as reliability assessment and reports on advances in the use of semiconductors in modern electronic and optoelectronic devices. The volume covers nitride-based materials; wide band-gap devices; mobile communications, including III-V-based transistors and photonic devices; crystal growth and characterization; and nanoscale phenomena, such as quantum wires, dots, and other low dimensional structures.

Table of Contents

International Symposium On Compound Semiconductors Award and Heinrich Welker Gold Medal	v
Young Scientist Award	ix
Preface	xi
Sponsors	xii
Symposium Committees	xiii
Acknowledgments	xiv
Review Papers
GaInP/GaAs DHBTs for power amplifiers in wireless applications	1	(10)
P M Asbeck
P F Chen
G Hanington
Y M Hsin
Progress of vertical cavity surface emitting lasers	11	(10)
T Miyamoto
F Koyama
K Iga
Reliability issues in compound semiconductor heterojunction devices	21	(10)
F Fantini
M Borgarino
L Cattani
P Cova
R Menozzi
G Salviati
C Canali
G Meneghesso
E Zanoni
Optoelectronic Devices and OEICs
GaN-based MQW light emitting diodes	31	(6)
H Kato
N Koide
A Hirano
M Koike
H Amano
I Akasaki
Piezoelectric and excitonic effects on optical properties of pseudomorphically strained wurtzite GaN quantum well lasers	37	(6)
J B Jeon
G D Sanders
K W Kim
M A Littlejohn
Magneto-optical properties of the 3.34 eV emission band in InGaN UV LEDs	43	(6)
T Taguchi
H Kudo
C Onodera
Y Yamada
T Mukai
Quantum-confined Stark effect tuned MQW laser using post-growth band-gap engineering	49	(6)
X Huang
A J Seeds
J S Roberts
A P Knights
GaAsP visible light emitting diodes for integration with Si devices	55	(6)
M Yoshimoto
T Yasui
S Ha
J Saraie
H Matsunami
Photon-spin controlled lasing oscillation in GaAs vertical cavity surface emitting lasers	61	(6)
H Ando
T Sogawa
H Gotoh
Temperature dependent cavity-polariton mode splitting in semiconductor microcavities	67	(6)
A R Pratt
T Takamori
T Kamijoh
Size and temperature effects of a photonic quantum ring device	73	(6)
K S Kwak
J C Ahn
B H Park
J Y Kim
O'Dae Kwon
Semiconductor photonic crystals with active lattice points	79	(6)
S Nojima
Fabrication and characteristics of very narrow waveguide semiconductor Raman amplifiers and lasers	85	(6)
T Saito
K Suto
T Kimura
Y Oyama
A Watanabe
J Nishizawa
Long-Wavelength and Intersubband Transition
Uncooled long-wavelength infrared photodetectors using narrow bandgap semiconductors	91	(8)
M Razeghi
J Wojkowski
J D Kim
H Mohseni
J J Lee
Growth and characterization of InAs/AlInSb type-II superlattices for mid-infrared applications	99	(6)
S Sasa
Y Tsujie
M Yano
M Inoue
Far infrared emission and population inversion of hot holes in MQW InGaAs/GaAs heterostructures excited at lateral transport	105	(6)
V Ya Aleshkin
A A Andronov
A V Antonov
N A Bekin
A V Gavrilenko
V I Gavrilenko
D G Revin
E A Uskova
B N Zvonkov
N B Zvonkov
W Knap
J Lusakowski
C Skierbiszewski
Spectral response of cyclotron resonance quantum Hall effect detector	111	(6)
A V Antonov
I V Erofeeva
V I Gavrilenko
N G Kalugin
A L Korotkov
A V Maslovskii
M D Moldavskaya
S I Pripolzin
V L Vaks
Y Kawano
S Komiyama
Coordinate dependence of transient and steady-state responsivity in quantum well infrared photodetectors	117	(6)
M Ershov
Ultrafast energy relaxation time in short wavelength intersubband transition measured by the pump and probe method	123	(8)
T Asano
S Noda
K Tomoda
Near-infrared intersubband transitions in InGaAs/AlAsSb coupled double quantum wells grown by molecular beam epitaxy	131	(6)
T Mozume
H Yoshida
A Neogi
N Georgiev
K Asakawa
M Kudo
Optical Properties
Spatial distribution of light reflectance modulated by near-field radio-frequency excitation in semiconductor structures	137	(6)
A O Volkov
O A Ryabushkin
Carrier transfer in facet-growth GaAs quantum wells studied by solid immersion photoluminescence microscopy	143	(6)
M Yoshita
T Sasaki
M Baba
S Koshiba
H Sakaki
H Akiyama
Photocurrent spectroscopic studies of interactions between GaAs/AlAs superlattice Stark ladders and GaAs single quantum well states under an electric field	149	(6)
T Nogami
K Kawasaki
K Kawashima
K Fujiwara
Magnetophotoluminescence in n- and p-type Si-modulation-doped AlGaAs/GaAs single heterostructures	155	(6)
K Suzuki
K Saito
K Muraki
Y Hirayama
Characterization of the effects of Al incorporation in AlGaInP light emitters	161	(6)
P C Mogensen
G Jones
N Cain
P Blood
D J Mowbray
S W Bland
D Peggs
R P Petrie
Gain spectra measurement of strained InGaAsP/GaAsP/AlGaAs single and double quantum well laser structures for wavelengths near 800 nm	167	(6)
A Oster
F Bugge
G Erbert
H Wenzel
High thermal stability of Er-related luminescence and atom configurations around Er atoms doped in InP by OMVPE growth	173	(4)
Y Fujiwara
T Ito
H Ofuchi
T Kawamoto
M Tabuchi
Y Takeda
Field Effect Transistors (FETs and HEMTs)
First demonstration of AlGaN/GaN heterostructure field effect transistor on GaN grown by lateral epitaxial overgrowth (LEO)	177	(8)
R Vetury
H Marchand
G Parish
P T Fini
J P Ibbetson
S Keller
J S Speck
S P DenBaars
U K Mishra
Passivated 0.15 µm InAlAs/InGaAs HEMTs with 500 GHz fmax: HF performance, thermal stability and reliability	185	(8)
M Chertouk
M Dammann
M Massler
K Kohler
G Weimann
InAlAs/pseudomorphic-InGaAs MMICs for 76 GHz-band millimetre wave radar	193	(8)
T Taguchi
K Matsugatani
K Hoshino
H Yamada
Y Ueno
High-speed InGaAs/InP doped channel HFETs with a strained Ga0.2In0.8P Schottky barrier enhancement layer grown by GSMBE	201	(6)
H C Kuo
H Hsia
Z Tang
D Caruth
B G Moser
M Feng
G E Stillman
Microstrip InP-HEMT-based MMICs at Q-band and W-band	207	(6)
M Nawaz
M Persson
E Choumas
M Garcia
I Angelov
E L Kollberg
H Zirath
InP-based heterojunction FET with composite channel consisting of In0.53Ga0.47As/In0.4Ga0.6As layers for high drain voltage operation	213	(6)
A Fujihara
E Mizuki
Y Ando
T Nakayama
H Miyamoto
N Samoto
M Kanamori
Elimination of kink effects in InAlAs/InGaAs InP-based HEMTs by means of InP etch stop layer	219	(6)
G Meneghesso
E Perin
C Canali
E Zanoni
Effect of electro-chemical etching in deionized water on RF performance of 0.1 µm gate pseudomorphic InGaAs/AlGaAs HEMT	225	(6)
M Sato
T Ohshima
M Tsunotani
T Kimura
A high gain and high yield 0.14 µm Au/WSi buried gate HJFET technology with directly dry-etched SiO2 openings	231	(6)
A Wakejima
Y Makino
K Yamanoguchi
K Onda
Y Hori
K Maruhashi
H Miyamoto
N Samoto
M Kanamori
K Ohata
Effect of a low resistance multilayer cap on 3.5 V PDC power performance for an enhancement-mode heterojunction FET	237	(6)
Y Bito
N Iwata
Single-voltage-supply operation of Ga0.51In0.49P/In0.15Ga0.85As doped-channel FETs for digital wireless communication	243	(6)
Y-W Hsu
S-S Lu
C-C Meng
L-B Chen
Temperature dependence of noise behaviour in high speed FETs	249	(6)
J A Fendrich
M Feng
Comparative investigation of single and double channel submicron InP HEMTs using quasi-2D non-stationary transport modelling	255	(6)
A Nezzari
C Ladner
J F Palmier
G Post
Control of breakdown behaviour for a GaAs MESFET with a field modulating plate	261	(6)
Y Miyoshi
K Asano
Y Nashimoto
Y Mochizuki
K Ishikura
M Kuzuhara
M Mizuta
Direct ion-implanted 0.1 µm E/D mode GaAs MESFET with ft > 100 GHz and fmax > 150 GHz	267	(6)
H Hsia
Z Tang
D Becher
R Shimon
D Caruth
J Fendrich
M Feng
Full band Monte Carlo simulation of a 100 nm 4H-SiC high frequency MOSFET	273	(6)
M Hjelm
H-E Nilsson
E Dubaric
P Kackell
C S Petersson
Hetero-Bipolar Transistors (HBTs)
First demonstration of an AlGaN/GaN Heterojunction bipolar transistor	279	(6)
L S McCarthy
P Kozodoy
M Rodwell
S P DenBaars
U K Mishra
High-speed InGaP/GaAs HBTs with an ultra-thin base	285	(6)
T Oka
K Ouchi
K Mochizuki
T Nakamura
High DC current gain InGaP/GaAs HBT	291	(6)
N Pan
R E Welser
C R Lutz
J Elliot
D P Vu
T S Low
T Shirley
C Hutchinson
G Essilfie
W Whiteley
B Yeats
D D'Avanzo
InGaP/GaAs drift HBTs with high fT and β	297	(6)
D A Ahmari
Q J Hartmann
P D Meyer
M L Hattendorf
Q Yang
J Mu
M Feng
G E Stillman
High-speed composite-collector InGaP/InGaAs/GaAs HBTs	303	(6)
A Hagley
R K Surridge
High-fT AlGaAs/InGaAs HBTs with reduced emitter resistance for low-power-consumption, high-speed ICs	309	(4)
T Niwa
Y Amamiya
M Mamada
H Shimawaki
Semiconductor Device Physics
Monte Carlo simulation of one- and two-dimensional electron gases	313	(6)
K Yamasaki
T Ezaki
N Mori
C Hamaguchi
Multiband modelling of quantum electron transport based on the Green function theory	319	(6)
M Ogawa
T Sugano
T Miyoshi
First-principle total energy calculations of atomic and electronic structures of Sil-x-yGexCy	325	(6)
M Ohfuti
M Ikeda
Y Awano
N Yokoyama
MBE regrowth over a patterned δ-doped backgate	331	(6)
M L Leadbeater
T M Burke
E H Linfield
N K Patel
D A Ritchie
M Pepper
GaAs/AlGaAs oxide tunnel barriers fabricated by an atomic force microscope tip-induced nano-oxidation technique	337	(6)
Y Okada
Y Iuchi
M Kawabe
J S Harris Jr
Temperature dependence of the magnetoresistance minima in n-channel Si/Sil-xGex modulation-doped quantum well structures	343	(6)
D-H Shin
C E Becker
J J Harris
J M Fernandez
N J Woods
T J Thornton
D K Maude
J-C Portal
Hot electron effects in InAs/AlSb/GaSb quantum wells	349	(6)
C Gatzke
K Fobelets
A C Rowe
R A Stradling
S A Solin
Evaluation of phase coherent length at high temperature up to 180 K using triple-barrier resonant tunnelling diodes	355	(6)
M Suhara
T Oobo
X-Z Xu
Y Miyamoto
K Furuya
Photoreflectance study of quantum effects on E1 and E1 + Δ1 transitions in GaAs/AlAs superlattices	361	(6)
T Nakanishi
K Okajima
M Nakayama
H Nishimura
Excitonic resonance-induced quenching of photocurrent in narrow miniband GaAs/AlAs superlattice p-i-n diodes	367	(6)
K Kawasaki
M Imazawa
K Kawashima
K Fujiwara
K Tominaga
M Hosoda
Quantized magnetotransport through magnetic barriers
K Tsubaki	373	(6)
Tunnelling metal-semiconductor devices with adjustable barrier height and width, fabricated with GaAs molecular layer epitaxy and W CVD	379	(6)
P Plotka
F Matsumoto
J Nishizawa
Quantum Wires
Study of selective MBE growth on patterned (001) InP substrates toward realization of <100>-oriented InGaAs ridge quantum wires	385	(6)
N Ono
H Fujikura
H Hasegawa
Structural and transport characterization of AlGaAs/GaAs quantum wires formed by selective doping mechanism	391	(6)
S Takabayashi
Y Kitasho
H Kazama
K Yoh
Spin relaxation of one-dimensional excitons in GaAs rectangular quantum wires	397	(6)
T Sogawa
H Ando
S Ando
H Kanbe
Migration-enhanced epitaxial growth and photoluminescence excitation analysis of GaAs/AlGaAs quantum wire array of different wire widths	403	(6)
D H Kim
S J Rhee
H S Ko
Y A Leem
M G Sung
I C Moon
S Y Kim
H G Yi
W S Kim
J-C Woo
Transport properties of Schottky in-plane-gate GaAs single and coupled quantum wire transistors	409	(6)
J Nakamura
T Kudoh
H Okada
H Hasegawa
AlGaAs nanometre scale network structures fabricated by selective area MOVPE	415	(6)
K Hayakawa
K Kumakura
J Motohisa
T Fukui
Quantum Dots
The role of stressor size fluctuation in photoluminescence of strain-induced quantum dots	421	(6)
J Ahopelto
M Sopanen
H Lipsanen
J Tulkki
Columnar-shaped InAs/GaAs self-assembled quantum dots grown by molecular beam epitaxy	427	(6)
Y Nakata
Y Sugiyama
K Mukai
T Futatsugi
H Shoji
M Sugawara
H Ishikawa
N Yokoyama
New way to enhance the uniformity of self-organized InAs quantum dots	433	(6)
H Zhu
H Wang
Z Wang
L Cui
S Feng
Laser properties of (InGa)As/GaAs self-assembled quantum dots grown on high-index planes	439	(6)
A Patane
A Polimeni
M Henini
L Eaves
P C Main
G Hill
Volume distribution of InAs/GaAs self-assembled quantum dots	445	(6)
Y Ebiko
S Muto
S Itoh
D Suzuki
H Yamakosi
K Shiramine
T Haga
Energy emission tuning of InAs/GaAs self-assembled quantum dots by growth interruption	451	(6)
A Patane
A Polimeni
M Henini
L Eaves
P C Main
M Al-Khafaji
A G Cullis
Self-organized process of InAs quantum dots monitored by reflectance-difference spectroscopy	457	(6)
T Kita
T Hagihara
K Yamashita
T Nishino
Capacitor feedback in a double quantum dot plane	463	(6)
Ph Lelong
H Sakaki
Formation of InGaAs dots on InP substrate with lattice-matching growth condition by droplet heteroepitaxy	469	(6)
Y Nonogaki
T Iguchi
S Fuchi
R Oga
H Moriya
Y Fujiwara
Y Takeda
Radiative lifetimes of spatially indirect excitons in type-II GaSb/GaAs self-assembled quantum dots	475	(6)
K Suzuki
M S Minsky
S B Fleischer
R A Hogg
S Kako
E L Hu
J E Bowers
Y Arakawa
Formation of InAs dots including Mn atoms by metalorganic molecular beam epitaxy and etching	481	(6)
T Tashima
H Asahi
J Sato
K Asami
Y K Zhou
S Gonda
Temperature dependence of threshold current and quantum efficiency of self-formed GaAs island laser on a Si substrate	487	(6)
Z I Kazi
T Egawa
T Jimbo
M Umeno
Photon assisted tunnelling spectroscopy on a double quantum dot	493	(6)
T Fujisawa
T H Oosterkamp
W G van der Wiel
S Tarucha
L P Kouwenhoven
Material Growth
In situ mesa etching and immediate regrowth in a hydride vapour phase epitaxy reactor	499	(6)
E Rodriguez Messmer
T Lindstrom
S Lourdudoss
High electron mobility AlInSb/InAsSb heterostructures grown on GaAs substrates by molecular beam epitaxy	505	(6)
M Kudo
T Mishima
Photoluminescence study of InP/GaP highly strained quantum wells	511	(6)
T Kimura
H Yaguchi
N Usami
K Onabe
Y Shiraki
Scanning tunnelling microscopy observations of indium segregation phenomena on GaInAs layer grown by molecular beam epitaxy	517	(6)
S Ohkouchi
Y Sugimoto
Six-inch diameter semi-insulating GaAs crystal grown by the vertical boat method	523	(6)
K Hashio
H Yoshida
T Sakurada
M Yamashita
T Kawase
M Kiyama
S Sawada
R Nakai
D Hara
Self-limiting submonolayer growth of InP by alternative triethylindium and tertiarybutylphosphine supply in ultra-high vacuum	529	(6)
N Otsuka
J Nishizawa
H Kikuchi
Y Oyama
Thermal cycle annealing and Si doping effects on the crystalline quality of GaAs/Si grown by MBE	535	(6)
K Baskar
H Kawanami
I Sakata
T Sekigawa
Growth of TlInGaP and TlInGaAs for temperature-independent bandgap energy III-V semiconductors	541	(6)
H Asahi
K Takenaka
H Koh
K Oe
K Asami
S Gonda
Properties of (Ga,Mn)As and their dependence on molecular beam growth conditions	547	(6)
F Matsukura
A Shen
Y Sugawara
T Omiya
Y Ohno
H Ohno
Enhancement of nitrogen incorporation in GaInNAs grown by MOVPE using tertiarybutylarsine and dimethylhydrazine	553	(6)
A Moto
S Tanaka
T Tanabe
M Takahashi
S Takagishi
Miscibility gap calculation for Gal-xInxNyAsl-y including strain effects	559	(6)
D Schlenker
T Miyamoto
Z Pan
F Koyama
K Iga
Gallium-doped ZnO for thin film solar cells	565	(6)
A Jager-Waldau
H-J Muffler
R Klenk
M Kirsch
C Kelch
M Ch Lux-Steiner
Material Characterization
Probing new structures and materials using heat pulse techniques	571	(8)
P Hawker
A J Kent
A J Naylor
I A Pentland
M Henini
T S Cheng
C T Foxon
Exciton spin polarization with centre-of-mass dispersion in GaAs/AlGaAs quantum wells	579	(6)
K Omae
S Fujita
T Uenoyama
Realization of strongly metal-dependent Schottky barrier heights on n-GaAs by an in situ electrochemical process	585	(6)
C Kaneshiro
T Sato
H Hasegawa
Diagnostic scheme for electrical behaviour of dielectrics/GaAs interfaces based on electroreflectance spectroscopy	591	(6)
K Ito
Y Mochizuki
Y Nashimoto
M Mizuta
A novel hydrogen passivation method for GaAs on Si grown by MOCVD	597	(6)
G Wang
K Ohtsuka
T Soga
T Jimbo
M Umeno
Transition from GaAs(001)(2 x 6)-S to (2 x 3)-S surfaces observed by synchrotron radiation photoelectron spectroscopy, x-ray absorption near edge structure, and x-ray standing waves	603	(6)
S Tsukamoto
M Shimoda
M Sugiyama
Y Watanabe
S Maeyama
T Ohno
N Koguchi
Direct evidence for the type-II character of In0.52Al0.48As/AlAs0.56Sb0.44 multiple quantum well structures	609	(6)
J Ringling
L Schrottke
H T Grahn
Y Kawamura
K Yoshimatsu
A Kamada
N Inoue
The negative magneto-resistance in an Si atomic-layer-doped GaAs	615	(6)
M Katsuno
N Sawaki
T Suzuki
K Hara
Anomalous growth temperature dependence of electrical properties of InP-based pseudomorphic resonant tunnelling diodes grown by molecular beam epitaxy	621	(6)
J Osaka
K Maezawa
H Matsuzaki
Photocapacitance investigation of stoichiometry-dependent deep levels in Sn-doped InP	627	(6)
Y Oyama
J Nishizawa
K Kim
A Shimizu
K Suto
Optical characterization of GaInNAs/GaAs quantum well structures	633	(6)
S Tanaka
M Takahashi
A Moto
T Tanabe
S Takagishi
K Karatani
T Nakanishi
M Nakayama
Optical quality improvement and blue-shift of GaInNAs/GaAs quantum well structures by thermal annealing	639	(6)
T Kageyama
T Miyamoto
S Makino
F Koyama
K Iga
Material Growth and Characterization (Wide Gap and Nitride)
Phase separation mechanism around dislocation in an InGaN/GaN quantum well structure	645	(6)
T Sugahara
M Hao
T Wang
D Nakagawa
Y Naoi
K Nishino
S Sakai
Effect of hydrogen on the ECR-MBE growth process of GaN	651	(6)
Y Chiba
T Tominari
M Nobata
Y Nanishi
Regrowth of GaN and AlGaN on grooved stripe structure	657	(6)
M Ishida
K Orita
T Hashimoto
S Nakamura
O Imafuji
M Yuri
T Sugino
K Itoh
Observation of intersubband absorption in MOCVD grown AlGaN/GaN MQWs	663	(6)
N Iizuka
N Suzuki
Growth and characterization of Si-doped cubic GaN	669	(6)
H Tanaka
A Nakadaira
Stacking fault and its effect on the GaN epitaxial growth	675	(6)
M Hao
S Mahanty
Y Morishima
H Takenaka
J Wang
S Tottori
M Nozaki
Y Ishikawa
T Sugahara
K Nishino
Y Naoi
S Saki
Structural and optical properties of low-dislocation-density GaN laterally overgrown by metalorganic chemical vapour deposition	681	(6)
H Marchand
J P Ibbetson
P T Fini
S Chichibu
S J Rosner
S Keller
S P DenBaars
J S Speck
U K Mishra
Selective area growth (SAG) and epitaxial lateral overgrowth (ELO) of wurtzite GaN on (111) Si substrate by metalorganic vapour phase epitaxy	687	(6)
Y Kawaguchi
Y Honda
M Yamaguchi
K Hiramatsu
N Sawaki
Preparation of polycrystalline InGaN thin films on indium tin oxide/glass substrates by RF plasma enhanced chemical vapour deposition	693	(6)
D-C Park
H-C Ko
S Fujita
S Fujita
Nucleation issue in the nanoscale selective area growth of II-VI semiconductors	699	(6)
A Avramescu
A Ueta
K Uesugi
I Suemune
Epitaxial growth of ZnSe and ZnCdSe by MBE using a mass spectrometer	705	(6)
H Okuyama
S Kijima
Y Sanaka
A Ishibashi
Growth and optical properties of ZnSl-xTex epilayers by hot-wall epitaxy	711	(6)
S Nam
Y-M Yu
C-K Lee
O Byungsung
K-S Lee
Y D Choi
H J Yun
Y-J Jung
C S Kim
Single crystal growth of 3C-SiC on 15R-SiC	717	(6)
S Nakamura
T Hatayama
K Nishino
T Kimoto
H Matsunami
Effects of oxidation/anneal atmosphere on an SiC MOS interface and MOSFETs	723	(6)
H Yano
F Katafuchi
T Kimoto
H Matsunami
Gating properties of AlN capped Al0.14Ga0.86N/GaN heterojunctions	729	(6)
P Ramvall
P Hacke
Y Aoyagi
MOCVD growth of nanometre-scale InGaN self-assembling quantum dots	735	(6)
K Tachibana
T Someya
Y Arakawa
Strain energy distribution in GaN and InGaN quantum dots on AlN buffer layers: a valence-force-field approach	741	(6)
T Saito
Y Arakawa
Doping and Processing
Codoping in wide band-gap semiconductors	747	(10)
H Katayama-Yoshida
T Nishimatsu
T Yamamoto
N Orita
Photoluminescence from Mg-doped cubic GaN grown by MOVPE	757	(6)
A Nakadaira
H Tanaka
High temperature (500 °C) implantation study of P+ and N+ implanted epitaxial N-type 4H-SiC	763	(6)
M B Scott
Y K Yeo
R L Hengehold
J D Scofield
Reactive ion etching of GaN using Cl2/BCl3	769	(6)
I H Lee
Y S Choi
K K Youn
S J Yu
J K Rhee
S G Kim
Electrical properties of metal/n-GaN and PCVD-SiO2/n-GaN interfaces	775	(6)
T Sawada
M Sawada
Y Yamagata
K Imai
K Suzuki
H Tomozawa
Effect of defect density on the electrical characteristics of Ni/n-GaN contacts	781	(6)
K Shiojima
J M Woodall
C J Eiting
P A Grudowski
R D Dupuis
Ohmic contact materials for p-ZnSe and p-GaN	787	(6)
Y Koide
T Kawakami
M Murakami
Near-noble transition-metal-based ohmic contacts to p-type InP: comparison of base metals (Ni, Pd)	793	(6)
A Yamaguchi
T Okada
Y Iguchi
T Saitoh
H Asamizu
Y Koide
M Murakami
Surface passivation of GaAs grown on Si by selenium sulphide treatment	799	(6)
J Arokiaraj
K Ohtsuka
T Soga
T Jimbo
M Umeno
Two-step GaAs/AlGaAs selective dry etching process to control vertical and lateral recess profile	805	(6)
T Uda
M Nishitsuji
K Inoue
T Tanaka
D Ueda
A novel PMMA-swelling technique to fabricate deep sub-micron T-shaped gate MODFETs	811	(6)
Y Anda
T Matsuno
M Tanabe
T Uda
M Nishitsuji
K Inoue
T Tanaka
D Ueda
N Hirose
T Matsui
Effect of high temperature annealing on precipitate formation in a carbon-doped base of InGaP/GaAs HBTs grown by LP-MOCVD	817	(6)
Q Yang
D Scott
P Meyer
H C Kuo
Q J Hartmann
J E Baker
G E Stillman
Mg doping in the MOVPE of AlInP in nitrogen or hydrogen ambient using Cp2Mg	823	(6)
H Hardtdegen
T Hauck
D Gauer
K Wirtz
H Holzbrecher
U Breuer
D Schmitz
M Heuken
Late News
Formation and optical properties of selectively grown InGaN/GaN nanostructures	829	(4)
J Wang
M Nozaki
Y Ishikawa
M Lachab
R S Qhalid Fareed
T Wang
S Sakai
Extended defect reduction in GaN laterally overgrown on Si(111)	833	(4)
H Marchand
N Zhang
L Zhao
Y Golan
P T Fini
J P Ibbetson
S Keller
S P DenBaars
J S Speck
U K Mishra
Photoassisted anodic etching of n-GaN films in NaOH electrolyte-dependence of carrier concentration of GaN film	837	(4)
M Ohkubo
T Imai
Studies of InAs(111) and GaSb(111) thin films grown on LiTaO3(110) substrate by XRD	841	(4)
W T Yuen
S Y Matsuno
N Kuze
K Kaya
H Goto
Y Shibata
M Tsunashima
Y Yamagata
Coherent and incoherent excitation of two-dimensional plasmons in AlGaAs/GaAs quantum wells by femtosecond laser pulses	845	(4)
N Sekine
K Hirakawa
M Voeburger
P Haring-Bolivar
H Kurz
Bistability of electroluminescence in In0.52Al0.48As/AlAs0.56Sb0.44 type II multiple quantum well diodes	849	(4)
Y Kawamura
K Yoshimatsu
N Inoue
26.9% efficient and radiation resistant InGaP/GaAs tandem solar cells	853	(4)
T Takamoto
M Yamaguchi
A Khan
E Ikeda
H Kurita
Electrical characteristics of MIS capacitors with AlN gate insulators grown by MBE on 4H-SiC substrate	857	(4)
K Fukuda
T Koizumi
H Okumura
K Nagai
T Sekigawa
S Yoshida
K Arai
I-V characteristics and two-dimensional electron gas transport properties above room temperature in gate-controlled Al0.15Ga0.85N/GaN heterostructure	861	(4)
N Maeda
T Nishida
T Saitoh
N Kobayashi
Electroluminescence of flip-chip-bonded InP-based HEMTs with 0.1 µm gate	865	(6)
N Shigekawa
T Furuta
S Kodama
T Suemitsu
Y Umeda
`AND' function in Coulomb blockade device	871	(4)
K Tsukagoshi
B W Alphenaar
K Nakazato
Subject Index	875	(10)
Author Index	885