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9780819471109

Design for Manufacturability Through Design-process Integration II

by ;
  • ISBN13:

    9780819471109

  • ISBN10:

    0819471100

  • Format: Paperback
  • Copyright: 2008-04-09
  • Publisher: Society of Photo Optical
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Summary

Proceedings of SPIE present the original research papers presented at SPIE conferences and other high-quality conferences in the broad-ranging fields of optics and photonics. These books provide prompt access to the latest innovations in research and technology in their respective fields. Proceedings of SPIE are among the most cited references in patent literature.

Table of Contents

DfM, the teenage years
Intel design for manufacturing and evolution of design rules
Automatic hotspot classification using pattern-based clustering
Effective learning and feedback to designers through design and wafer inspection integration
Rigorous CMP and electroplating simulations for DFM applications
Global and local factors of on-chip variation of gate length
Layout verification in the era of process uncertainty: target process variability bands vs. actual process variability bands
Context analysis and validation of lithography induced systematic variations in 65nm designs
Low-k[subscript 1] logic design using gridded design rules
DfM lessons learned from altPSM design
Yield aware design of gate layer for 45 nm CMOS-ASIC using a high-NA dry KrF systems
Inverse lithography as a DFM tool: accelerating design rule development with model-based assist feature placement, fast optical proximity correction and lithographic hotspot detection
Layout optimization based on a generalized process variability model
Manufacturing for design: a novel interconnect optimization method
Shaping gate channels for improved devices
A routing clean-up methodology for improvement of defect and lithography related yield
Analysis of systematic variation and impact on circuit performance
VARAN: variability analysis for memory cell robustness
Implementation of silicon-validated variability analysis and optimization for standard cell libraries
Microprocessor chip timing analysis using extraction of simulated silicon-calibrated contours
Hypersensitive parameter-identifying ring oscillators for lithography process monitoring
Systematic yield estimation method applying lithography simulation
Litho variations and their impact on the electrical yield of a 32nm node 6T SRAM cell
Predicting yield using model based OPC verification: calibrated with electrical test data
Exposure tool specific post-OPC verification
A procedure to back-annotate process induced layout dimension changes into the post layout simulation netlist
Predicting conversion time of circuit design file by artificial neural networks
System to improve RET-OPC production by dynamic design coverage using sign-off litho simulator
An extraction of repeating patterns from OPCed layout data
Accurate model base verification scheme to eliminate hotspots and manage warmspots
ACLV- and process-window-aware extraction of transistor parameters using litho-friendly design (LfD) methodologies
Device performance-based OPC for optimal circuit performance and mask cost reduction
Concurrent development methodology from design rule to OPC in 45-nm node logic device
Improvement on OPC completeness through pre-OPC hot spot detection and fix
DFM application on dual tone sub 50nm device
SEM contour-based model OPC calibrated with optically sensitive patterns
Hot spot management with die-to-database wafer inspection system
32nm design rule evaluation through virtual patterning
A new robust process window qualification (PWQ) technique to perform systematic defect characterization to enlarge the lithographic process window using a die-to-database verification tool (NGR2100)
Continuous process window modeling for process variation aware OPC and lithography verification
Using composite gratings for optical system characterization through scatterometry
Rules based process window OPC
RET selection using rigorous physics-based computational lithography
APF pitch-halving for 22nm logic cells using gridded design rules
Site portability and extrapolative accuracy of a predictive resist model
A comprehensive model of process variability for statistical timing optimization
Application of layout DOE in RET flow
Impact of gate line edge roughness on double-gate FinFET performance variability
Validation and application of a mask model for inverse lithography
Cell-based OPC with standard-cell fill insertion
Process variation in metal-oxide-metal (MOM) capacitors
Decomposition difficulty analysis for double patterning and the impact on photomask manufacturability
A method of obtaining optical lithography friendly layout using a model for first level defects
Checking design conformance and optimizing manufacturability using automated double patterning decomposition
Layout patterning check for DFM
Design based binning for litho qualification and process window qualification
DFM software for photomask production and qualification of its accuracy and functionality
Electrically driven optical proximity correction
Author Index
Table of Contents provided by Blackwell. All Rights Reserved.

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