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9780470184752

DRAM Circuit Design Fundamental and High-Speed Topics

by ; ; ;
  • ISBN13:

    9780470184752

  • ISBN10:

    0470184752

  • Edition: 2nd
  • Format: Hardcover
  • Copyright: 2007-12-04
  • Publisher: Wiley-IEEE Press
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Supplemental Materials

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Summary

This easy-to-read tutorial focuses on the chip designer rather than the user. It covers the transistor-level design of DRAM building blocks, including architecture and the array, voltage regulators and pumps, and peripheral circuits. This book presents both standard and high-speed implementations in a balanced approach to help IC designers prepare for the future. It includes details of delay-locked loops (DLLs), digital phase-locked loops (DPLLs), output circuit paths including transmission lines, terminations, and protocols.

Author Biography

Brent Keeth is a Fellow in DRAM Design R&D at Micron Technology, Inc. His twenty-five years of industry experience spans radar systems, avionics components, communicationsystems, professional production and post-production equipment for the broadcast television industry, and solid-state memory. He holds over 400 U.S. and foreign granted or pending patents.

R. Jacob Baker, PhD, is an engineer, educator, and inventor. He has more than twenty years of engineering experience and holds over 200 granted or pending patents in integrated circuit design. Dr. Baker is the author of several circuit design books. For a detailed biography, see http://cmosedu.com/jbaker/jbaker.htm.

Brian Johnson is a Senior Design Engineer in DRAM Design R&D at Micron Technology, Inc. His research interests include asynchronous sequential circuits, clock synchronization circuits, and high-speed logic design. He holds over 60 granted or pending patents related to DRAM design and integrated circuit design.

Feng Lin, PhD, is a Senior Design Engineer in DRAM Design R&D at Micron Technology, Inc. His research interests include high-speed I/O circuits, PLL/DLL, and mixed-signal circuit design. Dr. Lin holds over 50 granted or pending patents related to DRAM and integrated circuit design.

Table of Contents

Prefacep. xi
An Introduction to DRAM
DRAM Types and Operationp. 1
The 1k DRAM (First Generation)p. 1
The 4k-64 Meg DRAM (Second Generation)p. 7
Synchronous DRAM (Third Generation)p. 15
DRAM Basicsp. 22
Access and Sense Operationsp. 24
Write Operationp. 28
Opening a Row (Summary)p. 29
Open/Folded DRAM Array Architecturesp. 31
The DRAM Array
The Mbit Cellp. 33
The Sense Ampp. 44
Equilibration and Bias Circuitsp. 44
Isolation Devicesp. 46
Input/Output Transistorsp. 46
Nsense and Psense Amplifiersp. 47
Rate of Activationp. 49
Configurationsp. 49
Operationp. 52
Row Decoder Elementsp. 54
Bootstrap Wordline Driverp. 55
NOR Driverp. 57
CMOS Driverp. 58
Address Decode Treep. 58
Static Treep. 59
P&E Treep. 59
Predecodingp. 60
Pass Transistor Treep. 61
Discussionp. 61
Array Architectures
Array Architecturesp. 65
Open Digitline Array Architecturep. 65
Folded Array Architecturep. 75
Design Examples: Advanced Bilevel DRAM Architecturep. 83
Array Architecture Objectivesp. 84
Bilevel Digitline Constructionp. 85
Bilevel Digitline Array Architecturep. 68
Architectural Comparisonp. 93
The Peripheral Circuitry
Column Decoder Elementsp. 99
Column and Row Redundancyp. 102
Row Redundancyp. 104
Column Redundancyp. 107
Global Circuitry and Considerations
Data Path Elementsp. 111
Data Input Bufferp. 111
Data Write Muxesp. 115
Write Driver Circuitp. 116
Data Read Pathp. 118
DC Sense Amplifier (DCSA)p. 119
Helper Flip-Flop (HFF)p. 121
Data Read Muxesp. 122
Output Buffer Circuitp. 124
Test Modesp. 125
Address Path Elementsp. 126
Row Address Pathp. 126
Row Address Bufferp. 127
CBR Counterp. 127
Predecode Logicp. 128
Refresh Ratep. 128
Array Buffersp. 130
Phase Driversp. 131
Column Address Pathp. 131
Address Transition Detectionp. 132
Synchronization in DRAMsp. 135
The Phase Detectorp. 137
The Basic Delay Elementp. 137
Control of the Shift Registerp. 138
Phase Detector Operationp. 139
Experimental Resultsp. 140
Discussionp. 142
Voltage Converters
Internal Voltage Regulatorsp. 147
Voltage Convertersp. 147
Voltage Referencesp. 148
Bandgap Referencep. 153
The Power Stagep. 154
Pumps and Generatorsp. 158
Pumpsp. 158
DVC2 Generatorp. 165
Discussionp. 165
An Introduction to High-Speed DRAM
The Performance Paradigmp. 167
Performance for DRAM Memory Devicesp. 169
Underlying Technology Improvementsp. 171
High-Speed Die Architectures
Introduction: Optimizing DRAM Architecture for High Performancep. 173
Architectural Features: Bandwidth, Latency, and Cycle Timep. 175
Architectural Limiters: The Array Data Pathp. 176
Architectural Limiters: The Read Data Pathp. 183
Architectural Limiters: Latencyp. 186
Conclusion: Designing for High Performancep. 190
Input Circuit Paths
Introductionp. 193
Input Receiversp. 196
Matched Routingp. 200
Capture Latchesp. 203
Input Timing Adjustmentsp. 206
Current Mode Logic (CML)p. 212
Output Circuit Paths
Transmission Line, Impedance, and Terminationp. 220
Impedance Controlp. 224
Simultaneous Switching Noise (SSN)p. 230
Signal Return Path Shift (SRPS)p. 238
Electrostatic Discharge (ESD)p. 242
Parallel-to-Serial Conversionp. 244
Emerging Memory I/O Featuresp. 248
Timing Circuits
Introductionp. 251
All-Digital Clock Synchronization Designp. 254
Timing Analystsp. 255
Digital Delay Linep. 259
Phase Detector (PD)p. 267
Test and Debugp. 273
Dual-Loop Architecturep. 274
Mixed-Mode Clock Synchronization Designp. 275
Analog Delay Linep. 276
Charge-Pump Phase Detector (CPPD)p. 283
Dual-Loop Analog DLLp. 286
Mixed-Mode DLL and Its Applicationsp. 289
What's Next for Timingp. 291
Control Logic Design
Introductionp. 295
DRAM Logic Stylesp. 298
Process Limitationsp. 298
Array Operationp. 301
Performance Requirementsp. 304
Delay-Chain Logic Stylep. 306
Domino Logicp. 309
Testabilityp. 314
Command and Address Controlp. 317
Command Decoderp. 318
Read and Write Data Address Registersp. 324
Column Access Controlp. 328
Write Data Latency Timing and Data Demultiplexingp. 330
Write Latency Timingp. 332
Write Data Demultiplexingp. 338
Read Data Latency Timing and Data Multiplexingp. 346
Read Data FIFOp. 350
Read Latency (CL) Trackingp. 359
Comments on Future Direction for DRAM Logic Designp. 367
Power Delivery
Power Delivery Network Designp. 373
Device/Package Co-designp. 376
Full-Chip Simulationsp. 380
Future Work in High-Performance Memoryp. 385
Appendixp. 391
Glossaryp. 407
Indexp. 413
Table of Contents provided by Ingram. All Rights Reserved.

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