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Introduction | p. 1 |
Theory of Electrons in a Non-Crystalline Medium | p. 7 |
Introduction | p. 7 |
The Kubo-Greenwood formula | p. 11 |
Anderson localization | p. 15 |
Situation in which states are localized in one range of energies and not localized in another | p. 22 |
Photon-activated hopping; the ai2 law | p. 27 |
The minimum metallic conductivity | p. 28 |
Hopping and variable-range hopping | p. 32 |
The Anderson transition | p. 37 |
Mobility and percolation edges | p. 39 |
Conductors, insulators, and semiconductors | p. 42 |
Semimetals and pseudogaps | p. 50 |
Some calculations of the density of states | p. 51 |
Thermopower | p. 52 |
Hall effect | p. 56 |
Hopping conduction for alternating currents? | p. 59 |
One-dimensional problems | p. 62 |
Phonons and Polarons | p. 65 |
Introduction | p. 65 |
Distortion round a trapped electron | p. 66 |
Dielectric and acoustic polarons | p. 69 |
Rate of loss of energy by free carriers | p. 73 |
Transitions between localized states | p. 75 |
Introduction | p. 75 |
Single-phonon hopping processes | p. 76 |
Multiphonon processes | p. 78 |
Motion of a polaron in a crystal | p. 89 |
Trapped and localized polarons | p. 90 |
Thermopower due to polarons | p. 91 |
Hall effect due to polarons and other forms of hopping | p. 92 |
Examples of hopping polarons | p. 93 |
Degenerate gas of polarons | p. 94 |
Charge transport in strong fields | p. 95 |
The Fermi Glass and the Anderson Transition | p. 98 |
Introduction | p. 98 |
Metal-insulator transitions in crystals | p. 101 |
Band-crossing transitions | p. 101 |
Hubbard bands and the Mott transition | p. 104 |
Wigner crystallization | p. 109 |
Effect of disorder on Mott transitions | p. 109 |
Effect of correlation and distortion on Anderson transitions | p. 110 |
Doped semiconductors | p. 111 |
Impurity conduction; direct current | p. 111 |
Impurity conduction; alternating currents | p. 117 |
Metal-insulator transitions in doped semiconductors | p. 119 |
Metal-insulator transitions in metal-rare-gas systems | p. 126 |
Metal-insulator transitions in compensated semiconductors | p. 127 |
Anderson transition in a pseudogap; magnesium-bismuth alloys | p. 130 |
Anderson transition of type II; Amorphous films of Fe-Ge | p. 132 |
Two-dimensional conduction in an inversion layer | p. 135 |
Fermi glasses where lattice distortion is important | p. 139 |
Impurity conduction in nickel oxide | p. 140 |
Conduction in glasses containing transition-metal ions | p. 142 |
Lanthanium strontium vanadate (La1-xSrxVO3) | p. 144 |
Pyrolytic carbons | p. 145 |
Cerium sulphide | p. 146 |
Metal-insulator transitions in tungsten bronzes | p. 148 |
Vanadium monoxide (VOx) | p. 150 |
Impurity conduction in magnetic semiconductors | p. 152 |
Granular metal films | p. 157 |
Polycrystalline aggregates | p. 160 |
Liquid Metals and Semimetals | p. 161 |
Introduction | p. 161 |
Scattering of electrons by a random distribution of centres; degenerate semiconductors | p. 163 |
Resistivity of liquid metals; Ziman's theory | p. 165 |
Resistivity of liquid alloys | p. 170 |
Thermoelectric power of liquid metals | p. 172 |
Hall effect in liquid metals | p. 172 |
Density of states | p. 173 |
Change of Knight shift on melting | p. 174 |
X-ray emission spectra and photoemission | p. 175 |
Liquid transition and rare-earth metals | p. 176 |
Amorphous metals and grain boundaries | p. 177 |
Injected electrons in liquid rare gases | p. 179 |
Liquid semimetals and semiconductors | p. 181 |
Liquid systems in which the depth of the pseudogap changes with volume | p. 185 |
Mercury | p. 185 |
Caesium | p. 189 |
Liquid alloys with pseudogaps in which the composition is varied | p. 190 |
Liquid systems in which the depth of the pseudogap changes with temperature | p. 194 |
Tellurium | p. 194 |
Some liquid alloys of tellurium | p. 197 |
Non-Crystalline Semiconductors | p. 199 |
Introduction | p. 199 |
Preparation and classification of materials | p. 200 |
Methods of determining structure | p. 204 |
Electrical properties of non-crystalline semiconductors | p. 209 |
Density of states | p. 210 |
The mobility edge | p. 215 |
Temperature dependence of the d.c. conductivity | p. 219 |
Behaviour in the liquid state | p. 222 |
a.c. conductivity | p. 223 |
Thermopower | p. 235 |
Hall effect | p. 240 |
Magnetoresistance | p. 242 |
Field effect | p. 243 |
Drift mobility and photoconduction | p. 247 |
Drift mobility | p. 247 |
Photoconductivity | p. 254 |
Quantum efficiency | p. 265 |
Conduction at a mobility edge versus hopping | p. 270 |
Optical absorption | p. 272 |
Absorption edges and Urbach's rule | p. 273 |
Effect of externally applied fields | p. 285 |
Interband absorption | p. 287 |
Absorption at high energies | p. 293 |
Intraband absorption | p. 297 |
Photoluminescence | p. 300 |
Vibrational spectra. Density of phonon modes | p. 301 |
Other measurements | p. 305 |
Specific heat and thermal conductivity | p. 305 |
Photoemission and density of states | p. 310 |
Electron spin resonance | p. 314 |
Tetrahedrally-Bonded Semiconductors-Amorphous Germanium and Silicon | p. 320 |
Methods of preparation | p. 320 |
Structure of amorphous Ge and Si | p. 322 |
Voids, impurities and other defects in amorphous Ge and Si | p. 333 |
Electrical properties of amorphous germanium | p. 345 |
Electrical properties of amorphous silicon | p. 362 |
Optical properties of amorphous germanium | p. 375 |
Optical properties of amorphous silicon | p. 384 |
Density of states in the valence and conduction bands of amorphous germanium and silicon | p. 396 |
Arsenic and other Three-Fold Co-Ordinated Materials | p. 408 |
Introduction | p. 408 |
Forms and preparation of arsenic | p. 408 |
Structure of amorphous arsenic | p. 410 |
Electrical properties of amorphous arsenic | p. 419 |
Optical properties of amorphous arsenic and the density of states in the bands. | p. 426 |
States in the gap of amorphous arsenic | p. 434 |
Amorphous antimony, phosphorus, and related materials | p. 439 |
Chalcogenide and Other Glasses | p. 442 |
Introduction | p. 442 |
Structure | p. 445 |
Electrical properties of chalcogenide glasses | p. 452 |
Introduction | p. 452 |
d.c. conductivity | p. 457 |
Thermopower | p. 458 |
Hall effect | p. 459 |
States in the gap | p. 460 |
Introduction | p. 460 |
Screening length | p. 468 |
Field effect | p. 469 |
Drift mobility | p. 470 |
Luminescence | p. 474 |
Photoconductivity | p. 483 |
Effect of alloying on the dark current | p. 484 |
Numerical values in the model of charged dangling bonds | p. 488 |
Charge transport in strong fields | p. 490 |
Density of electron states in conduction and valence bands | p. 491 |
Optical properties | p. 497 |
Switching in alloy glasses | p. 507 |
Oxide glasses | p. 512 |
Selenium, Tellurium, and their Alloys | p. 517 |
Structure of amorphous selenium and tellurium | p. 517 |
Optical properties of amorphous selenium and tellurium | p. 521 |
Electrical properties of amorphous selenium | p. 530 |
Electrical conductivity | p. 530 |
Drift mobilities | p. 534 |
Carrier lifetimes and ranges | p. 539 |
Photogeneration in amorphous Se; xerography | p. 540 |
Some properties of liquid selenium and Se-Te alloys | p. 543 |
References | p. 548 |
Index | p. 583 |
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