Epitaxial Growth-Principles and Applications

by Barabasi, Albert-Laszlo; Liu, Feng; Pearsall, Tom; Krishnamurthy, Mohan

• ISBN13: 9781558994775
• ISBN10: 1558994777
• Format: Hardcover
• Copyright: 1999-09-01
• Publisher: Materials Research Society

Summary

Epitaxial growth is a critical technology in numerous areas ranging from elemental semiconductors to optoelectronic materials, from magnetic multilayers to inorganic insulators, from protein crystals to quantum dots. This book brings together an international mix of researchers and scientists to address common themes in epitaxial growth. Contributions by experts in the field are enriched by the additional mix of student and invited papers. Topics include: growth mechanisms; characterization; strained systems and novel epitaxy.

Table of Contents

Dedication
Preface
Self-Consistent Rate-Equation Approach to Nucleation and Growth in Point/Extended Island Models of 1-D Homoepitaxy	p. 3
Mechanisms of Mound Coarsening in Unstable Epitaxial Growth	p. 11
Self-Organization of Surface Patterns During Clustering	p. 21
The Role of the Lattice Step in Epitaxial Growth	p. 33
Smoothing Surfaces by an ac Field: An Application of the Ratchet Effect	p. 39
Low-Temperature Si(111) Homoepitaxy and Doping Mediated by a Monolayer of Pb	p. 45
Nucleation and Growth of Supported Metal Clusters at Defect Sites on MgO and NaCl (001) Surfaces: The Cases of Pd and Ag	p. 51
Roughening of Au(111) Surfaces During Ion Beam Erosion: A Scanning Tunneling Microscope and X-ray Diffraction Study	p. 61
UHV-Investigation on MOCVD-Grown InP(100) Surfaces	p. 67
Epitaxial Growth of Atomically Flat Spin Dependent Tunneling Junctions	p. 73
Lateral In[subscript x]Ga[subscript 1-x]P Heterostructures Obtained by Single Step Growth on Pre-Patterned Substrate by Chemical Beam Epitaxy	p. 79
A Kinetic Monte Carlo Model for Ga Desorption From Chemisorbed and Physisorbed States During High-Temperature GaAs MBE	p. 85
Homoepitaxial Growth of Si at Low Temperature (325[degrees]C)	p. 91
Self-Limited GaAs Wire Growth by MOVPE and Application to InAs Quantum Dot Array	p. 97
Uniform Quantum Wire and Quantum Dot Arrays by Natural Self-Faceting on Patterned Substrates	p. 105
In Situ Studies of the Formation of Ga and Al Wires on Si(112) Facet Surfaces	p. 117
Electrical Characterization of Beryllium Doped Low-Temperature MBE Grown GaAs	p. 129
The Use of Electron Channeling Patterns for Process Optimization of Low-Temperature Epitaxial Silicon Using Hot-Wire Chemical Vapor Deposition	p. 135
Connection Between Structure and Electronic Properties in Epitaxial Magnetic Layers	p. 141
Temperature-Dependent Photoluminescence Study of High Silicon Doped AlGaAs and the Correlation Between the Photoluminescence Spectra and the Doping Level	p. 151
Multifunctional Optical in Situ Monitoring of Semiconductor Film Growth	p. 157
In Situ Observation of Scaling Behavior During Solution-Phase Growth of Surfactant Monolayers	p. 163
MBE-Grown Planar Doped Barrier Diodes	p. 171
Transmission Electron Microscopy Study of InGaAs/GaAs Structural Evolution Near the Stranski-Krastanow Transformation	p. 175
Epitaxial Lateral Overgrowth of Gallium Arsenide Studies by Synchrotron Topography	p. 181
Preparation and Optical Properties of Ge and C-Induced Ge Dots on Si	p. 187
The Nature of Ripples and Islands in Strained SiGe/Si Heteroepitaxy: Nucleation versus Instability Phenomena	p. 199
Morphological Transition of Ge Islands on Si(001) Grown by LPCVD	p. 205
Initial Strain Relaxation in Si[subscript 0.91]Ge[subscript 0.09]/Si Superlattice Structures Via Misfit-Dislocations	p. 213
Self-Assembling of Epitaxial NiSi[subscript 2] in Si(001)	p. 219
Compliant Substrate Processes	p. 225
Dislocation-Induced Surface Strain on (001) Silicon-on-Insulator	p. 235
Observation of Surfactant Properties of Thallium in the Epitaxial Growth of Indium Arsenide on Gallium Arsenide	p. 245
Computer Simulations of Two-Dimensional Sn-Cu Alloys on (100) and (111) Cu Surfaces	p. 251
The Growth of Homoepitaxial Silicon at Low Temperatures Using Hot Wire Chemical Vapor Deposition	p. 261
Mask-Induced Strain in GaAs Layers Grown by Liquid Phase Epitaxial Lateral Overgrowth	p. 273
Cluster "Contact Epitaxy" - Direct Evidence for Novel Particle-Substrate Interactions	p. 279
Effect of Hydrogen in AlAs Growth by Atomic Hydrogen-Assisted Molecular Beom Epitaxy	p. 285
Localized Doping Enhancement by Photon-Assisted Chemical Beam Epitaxy	p. 291
Epitaxial Growth of Zinc-Blende AlN by Plasma Source Molecular Beam Epitaxy	p. 297
Mesoscopic Models of Sintering of Metallic Clusters: A Study by Molecular Dynamics Simulations	p. 303
Heteroepitaxial Growth of Zinc Oxide Single Crystal Thin Films on (111) Plane YSZ by Pulsed Laser Deposition	p. 309
Author Index	p. 315
Subject Index	p. 317
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