Gate Stack and Silicide Issues in Silicon Processing

by Clevenger, L. A.; Campbell, S. A.; Besser, P. R.; Herner, S. B.; Kittl, J.

• ISBN13: 9781558995192
• ISBN10: 1558995196
• Format: Hardcover
• Copyright: 2000-07-01
• Publisher: Materials Research Society

Summary

As the feature size of microelectronic devices approaches the deep submicron regime, the process development and integration issues related to gate stack and silicide processing are key challenges. Gate leakage is rising due to direct tunneling. Power and reliability concerns are expected to limit the ultimate scaling of SiO2-based insulators to about 1.5nm. Gate insulators must not deleteriously affect the interface quality, thermal stability, charge trapping, or process integration. Metal gate materials and damascene gates are being investigated, in conjunction with the application of a high-permittivity gate insulator, to provide sufficient device performance at ULSI dimensions. The silicidation process is also coming under pressure. Narrow device widths and decreasing junction depths are making the formation of low-leakage, low-resistance silicide straps extremely difficult. Producing shallower junctions via ion implantation is inhibited by transient enhanced diffusion and low beam currents at low implantation energies. Gate stack and contact film effects, such as point defect injection, extended defect formation, and stress on ultrashallow junction formation must be considered.

Table of Contents

Preface	xi
Materials Research Society Symposium Proceedings	xii
HIGH-k MATERIALS
The Structure of Plasma-Deposited and Annealed Pseudo-Binary ZrO2-SiO2 Alloys	3	(3)
Gilbert Rayner, Jr.
Robert Therrien
Gerald Lucovsky
Physical and Electrical Properties of Yttrium Silicate Thin Films	6	(2)
James Joseph Chambers
Gregory N. Parsons
Electrical Characteristics of TaOxNy for High-k MOS Gate Dielectric Applications	8
Kiju Im
Hyungsuk Jung
Sanghun Jeon
Dooyoung Yang
Hyunsang Hwang
NOVEL GATE INSULATORS
Ultrathin Gate Oxide Prepared by Nitridation In ND3 For MOS Device Applications	4	(4)
Hyungshin Kwon
Hyunsang Hwang
Amorphous Mixed TiO2 and SiO2 Films On Si(100) By Chemical Vapor Deposition	8	(1)
Ryan C. Smith
Charles J. Taylor
Jeffrey Roberts
Noel Hoilien Stephen
A. Campbell
Wayne L. Gladfelter
Zr Oxide Based Gate Dielectrics With Equivalent SiO2 Thickness Of Less Than 1.0 nm And Device Integration With Pt Gate Electrode	9
Yanjun Ma
Yoshi Ono
NOVEL GATE STRUCTURES
Molybdenum As A Gate Electrode For Deep Sub-Micron CMOS Technology	2	(1)
Pushkar Ranade
Yee-Chia Yeo
Qiang Lu
Hideki Takeuchi
Tsu-Jae King
Chenming Hu
Structural and Chemical Characterization Of Tungsten Gate Stack For 1Gb DRAM	3
Oleg Gluschenkov
John Benedict
Larry Clevenger
Patrick DeHaven
Chet Dziobkowski
Johnathan Faltermeier
Chenting Lin
Irene McStay
Keith Wong
ADVANCED GATE DIELECTRICS
A Closer ``Look'' At Modern Gate Oxides	1	(3)
Frieder H. Baumann
C.-P. Chang
John L. Grazul
Avid Kamgar
C. T. Liu
David A. Muller
Low-Oxygen Nitride Layers Produced By UHV Ammonia Nitridation Of Silicon	4	(1)
Mark A. Shriver
Ted K. Higman
Steve A. Campbell
Charles J. Taylor
Jeffrey Roberts
Low Temperature Nitridation Of SiO2 Films Using A Catalytic-CVD System	5
Akira Izumi
Hidekazu Sato
Hideki Matsumura
INTEGRATION ISSUES IN THE FEOL
Integration Challenges For Advanced Salicide Processes And Their Impact On CMOS Device Performance	1	(2)
Karsten Wieczorek
Manfred Horstmann
Hans-Jurgen Engelmann
Kornelia Dittmar
Werner Blum
Akif Sultan
Paul R. Besser
Austin Frenkel
Development of a Post-Spacer Etch Clean to Improve Silicide Formation	3	(1)
Edward K. Yeh
Samit S. Sengupta
Calvin T. Gabriel
A Two-Step Spacer Etch For High-Aspect-Ratio Gate Stack Process	4
Chien Yu
Rich Wise
Anthony Domenicucci
NOVEL SILICIDE PROCESSING
In Situ And Ex Situ Measurements Of Stress Evolution In The Cobalt-Silicon System	3	(2)
G. Lucadamo
Christian Lavoie
Cyril Cabral, Jr.
Roy A. Carruthers
James M.E. Harper
Formation and Electrical Transport Properties of Nickel Silicide Synthesized By Metal Vapor Vacuum Arc Ion Implantation	5
Xing Wang Zhang
S.P. Wong
W.Y. Cheung
F. Zhang
POSTER SESSION
The Physical and Electrical Properties of Polycrystalline Si1-xGex as a Gate Electrode Material for ULSI CMOS Structures	1	(1)
Sung-Kwan Kang
Dae-Hong Ko
Tae-Hang Ahn
Moon-Sik Joo
In-Seok Yeo
Sung-Jin Whoang
Doo-Young Yang
Chul-Joo Whang
Hoo-Jeong Lee
A Low-Cost BiCMOS Process With Metal Gates	2	(1)
Henk W. van Zeijl
Lis K. Nanver
Effects Of Nitridation By N2O Or NO On The Electrical Properties Of Thin Gate Or Tunnel Oxides	3	(4)
Cosimo Gerardi
Tommaso Rossetti
Massimo Melanotte
Salvatore Lombardo
Isodiana Crupi
Hot Wall Isothermal RTP For Gate Oxide Growth And Nitridation	7	(2)
Allan Laser
Christopher Ratliff
Jack Yao
Jeff Bailey
Jean-Claude Passefort
Eric Vaughan
Larry Page
Controlling CoSi2 Nucleation: The Effect Of Entropy Of Mixing	9	(1)
Christophe Detavernier
Roland L. Van Meirhaeghe
Karen Maex
Felix Cardon
Effect of a Thin Ta Layer on the C49-C54 Transition	10	(1)
Francesco La Via
Francesco Mammoliti
Maria Grazia Grimaldi
Simona Quilici
Franco Meinardi
Silicidation Of Titanium-Rich Titanium Boride Deposited By Co-Sputtering On Si(100)	11	(3)
Guy Sade
Joshua Pelleg
Thin Ni-Silicides For Low Resistance Contacts And Growth Of Thin Crystalline Si Layers	14	(1)
Elena A. Guliants
Wayne A. Anderson
Remote Plasma Nitridation of In Situ Steam Generated (ISSG) Oxide	15
Husam N. Al-Shareef
A. Karamcheti
T.T. Luo
G.A. Brown
V.H.C. Watt
M.D. Jackson
H.R. Huff
R. Jallepally
D. Noble
N. Tam
G. Miner
SILICIDE FORMATION MECHANISMS
On The Template Mechanims Of Enhanced C54-TiSi2 Formation	2	(1)
L. Kappius
R. T. Tung
Investigation On C54 Nucleation And Growth By Micro-Raman Imaging	3	(1)
Stefania M. S. Privitera
Francesco Meinardi
Simona Quilici
Francesco La Via
Corrado Spinella
Maria Grazia Grimaldi
Emanuele Rimini
Silicide Engineering: Influence Of Alloying Elements On CoSi2 Nucleation	4
Christophe Detavernier
Roland L. Van Meirhaeghe
Karen Maex
Felix Cardon
SHALLOW JUNCTIONS AND SILICIDES
Study of CoSix Spike Leakage for 0.1-um CMOS	1	(2)
Ken-ichi Goto
Modeling Self-Aligned Silicidation in 2D and 3D: Growth Suppression by Oxygen Diffusion	3
Victor Moroz
Takako Okada
EPITAXIAL SILICIDES
Epitaxial CoSi2 Formation by a Cr or Mo Interlayer	2	(1)
Christophe Detavernier
Roland L. Van Meirhaeghe
Felix Cardon
K. Maex
B. Brijs
W. Vandervorst
In Situ Growth and Growth Kinetics of Epitaxial (100) CoSi2 Layer on (100)Si by Reactive Chemical Vapor Deposition	3
Hwa Sung Rhee
Heui Seung Lee
Jong Ho Park
Byung Tae Ahn
Author Index
Subject Index