Low Dielectric Constant Materials for Ic Applications

by Ho, Paul S.; Leu, Jihperng; Lee, Wei William

• ISBN13: 9783540678199
• ISBN10: 3540678190
• Format: Hardcover
• Copyright: 2003-02-01
• Publisher: Springer Verlag

Summary

Low dielectric constant materials are an important component of microelectronic devices. This comprehensive book covers the latest low-dielectric-constant (low-k) materials technology, thin film materials characterization, integration and reliability for back-end interconnects and packaging applications in microelectronics. Highly informative contributions from leading academic and industrial laboratories provide comprehensive information about materials technologies for < 0.18 um process technology. Topics include: Organic dielectric materials, Inorganic dielectric materials, Composite dielectric materials, Metrology and characterization techniques, Integration, Reliability. This volume will be an invaluable resource for professionals, scientists, researchers and graduate students involved in dielectric technology development, materials science, polymer science, and semiconductor devices and processing.

Table of Contents

Overview on Low Dielectric Constant Materials for IC Applications	1	(22)
P.S. Ho
J. Leu
W.W. Lee
Introduction	1	(3)
Dielectric Constant and Bonding Characteristics	4	(4)
Material Properties and Integration Requirements	8	(3)
Characterization of Low-k Dielectrics	11	(3)
Porous Low-k Materials	14	(4)
Conclusion	18	(5)
References	19	(4)
Materials Issues and Characterization of Low-k Dielectric Materials	23	(52)
E.T. Ryan
A.J. McKerrow
J. Leu
P.S. Ho
Introduction	23	(3)
Thin-Film Material Characterization	26	(11)
General Structure-Property Relationships	37	(11)
Dielectric Constant	37	(6)
Thermal Properties	43	(3)
Moisture Uptake	46	(1)
Thermomechanical and Thermal Stress Properties	46	(2)
Fluorinated Polyimide: Effect of Chemical-Structure Modifications on Film Properties	48	(3)
Crosslinked and Thermosetting Materials	51	(5)
Parylene Polymers: Effect of Thermal History on Film Properties	56	(8)
Future Challenges	64	(11)
References	68	(7)
Structure and Property Characterization of Low-k Dielectric Porous Thin Films Determined by X-Ray Reflectivity and Small-Angle Neutron Scattering	75	(20)
E.K. Lin
H. Lee
B.J. Bauer
H. Wang
J.T. Wetzel
W. Wu
Introduction	75	(1)
Two-Phase Methodology	76	(7)
Experimental	77	(2)
Two-Phase Analysis Using the Debye Model	79	(1)
Results and Discussion	80	(3)
Three-Phase Methodology	83	(3)
Films with Ordered Porous Structure	86	(1)
Limits of SANS Characterization Methods	87	(1)
Future Developments	88	(4)
Contrast Variation SXR	88	(1)
Inhomogeneous Wall Composition	89	(3)
Conclusion	92	(3)
References	92	(3)
Vapor Deposition of Low-k Polymeric Dielectrics	95	(26)
W.N. Gill
S. Rogojevic
T. Lu
Introduction	95	(2)
Vapor-Phase Deposition and Polymerization on Substrates	97	(1)
Parylenes	98	(13)
Synthesis Review	99	(1)
Properties of Parylene-N	100	(1)
Mechanisms and Models of Parylene Polymerization	101	(5)
Integration Issues with Parylene-N	106	(1)
Synthesis and Properties of Parylene-F	107	(3)
Integration Issues with Parylene-F	110	(1)
Polynaphthalene and Its Derivatives	111	(3)
Experimental System for Polynaphthalene Synthesis	111	(2)
Properties of Polynaphthalene and Fluorinated Polynaphthalene	113	(1)
Teflon and Its Derivatives	114	(2)
Synthesis of Teflon-AF	114	(1)
Properties of Teflon-AF	115	(1)
Integration Issues with Teflon	115	(1)
Vapor-Deposited Polyimides	116	(1)
Prospects for Vapor-Depositable Low-k Polymers	117	(4)
References	117	(4)
Plasma-Enhanced Chemical Vapor Deposition of FSG and a-C:F Low-k Materials	121	(46)
K. Endo
K. Kishimoto
Y. Matsubara
K. Koyanagi
Introduction	121	(1)
FSG Films	122	(22)
Introduction	122	(1)
General Characteristics	122	(6)
HDP-CVD FSG Film	128	(16)
a-C:F Films	144	(23)
Introduction	144	(1)
Deposition of a-C:F by PE-CVD and Controlling Fluorine Concentration	145	(1)
Control of F/C Ratio by Helicon-Wave HDP-CVD	146	(5)
Mechanism of the Reduction of the Dielectric Constant of a-C:F	151	(5)
Signal-Delay Measurements of CMOS Circuits	156	(6)
Conclusion	162	(1)
References	163	(4)
Porous Organosilicates for On-Chip Applications: Dielectric Generational Extendibility by the Introduction of Porosity	167	(36)
W. Volksen
C.J. Hawker
J.L. Hedrick
V. Lee
T. Magbitang
M. Toney
R.D. Miller
E. Huang
J. Liu
K.G. Lynn
M. Petkov
K. Rodbell
M.H. Weber
Introduction	167	(4)
Porous Silica	171	(2)
Organosilicates	173	(2)
Porogens	175	(5)
Porous Organosilicate Matrix Resins	180	(3)
Formation of Nanohybrids	183	(3)
Porous Organosilicates	186	(1)
Characterization of Porous Organosilicates	187	(9)
Conclusion	196	(7)
References	198	(5)
Metal/Polymer Interfacial Interactions	203	(18)
D.M. Martini
J.A. Kelber
Introduction	203	(1)
Experimental Methods	204	(5)
XPS and AES Analysis	205	(1)
XPS for Nucleation Modes	206	(1)
Other Surface-Science Techniques	207	(1)
Metal-Deposition Techniques	207	(2)
Metallization of Fluoropolymers	209	(7)
Metal Evaporation	209	(1)
Sputter Deposition	210	(1)
Aluminum MOCVD	210	(3)
Copper MOCVD	213	(3)
Polymers on Metals: Adhesion to Cu	216	(2)
Introduction to SiC films	216	(1)
Vinyl Silane-Derived Films on Cu	217	(1)
Conclusion	218	(3)
References	219	(2)
Diffusion of Metals in Polymers and During Metal/Polymer Interface Formation	221	(32)
F. Faupel
A. Thran
M. Kiene
T. Strunskus
V. Zaporojtchenko
K. Behnke
Introduction	221	(2)
Thermodynamic Considerations	223	(4)
Effect of Metal-Polymer Interaction on the Mobility of Metal Atoms	227	(2)
Surface Diffusion, Nucleation, and Growth of Metal Films	229	(6)
Diffusion and Aggregation	235	(6)
Atomic Diffusion	241	(6)
Conclusion	247	(6)
References	248	(5)
Plasma Etching of Low Dielectric Constant Materials	253	(24)
G.S. Oehrlein
T.E.F.M. Standaert
P.J. Matsuo
Introduction	253	(2)
Technological Requirements and Patterning Approaches	255	(5)
Damascene Processing	255	(2)
Plasma Etching	257	(1)
Important Low Dielectric Constant Materials	258	(2)
Fluorocarbon-Based Etching Processes	260	(5)
Fluorine-Doped SiO2 (SiOF), Hydrogen Silsequioxane (HSQ) and Methyl Silsequioxane (MSQ)	260	(3)
Porous Silica Films	263	(2)
Directional Etching of Organic Low-k Materials	265	(6)
Hydrocarbon-Based Organic Materials: Etching of Olyarylene Ether (PAE-2) in Ar/O2/N2 Gas Mixtures	268	(1)
Fluorocarbon-Based Organic Materials: Polytetrafluoroethylene	269	(2)
Hybrid Materials	271	(1)
Postetch Mask-Stripping and Via-Cleaning Processes	271	(3)
Conclusion	274	(3)
References	275	(2)
Integration of SiLK Semiconductor Dielectric	277	(28)
J.J. Waeterloos
Introduction	277	(1)
SiLK Semiconductor Dielectric	278	(1)
Subtractive Technologies	279	(11)
Introduction	279	(2)
Integration Flow for Subtractive Interconnects	281	(1)
Integration Unit Steps	282	(6)
Electrical Results	288	(1)
Conclusion	288	(2)
Damascene Technologies	290	(11)
Introduction	290	(1)
Embedded-Hardmask Approach for Dual Damascene	290	(7)
Dual Damascene Schemes with Multilayered Hardmasks	297	(4)
Cost-of-Ownership	301	(1)
Conclusion	302	(3)
References	303	(2)
Index	305