Materials, Technology and Reliability for Advanced Interconnects 2005

by Besser, P. R.; Iacopi, F.; Mckerrow, A. J.; Vlassak, J.; Wong, C. P.

• ISBN13: 9781558998162
• ISBN10: 1558998160
• Format: Hardcover
• Copyright: 2005-08-26
• Publisher: Cambridge Univ Pr

Summary

The continued scalling of physical dimentions in the integrated-circuits industry necessitates the introduction of novel materials, processes, integration schemes and packages. This volume brings together leading modelers and experimentalists to discuss the plethora of process and reliability issues associated with depositing.

Table of Contents

Constraint effects on cohesive failures in low-k dielectric thin films	p. 3
A new technique for the characterization of the adhesion in integrated circuit interconnect structures	p. 11
Mechanical properties of porous MSQ films : impact of the porogen loading and matrix crosslinking	p. 17
High-temperature nanoindentation measurement for hardness and modulus evaluation of low-k films	p. 23
Depth-profiling pore morphology in nanoporous thin films using positronium lifetime annihilation spectroscopy	p. 29
Solid state MAS NMR spectroscopic characterization of plasma damage and UV modification of low-k dielectric films	p. 35
Pore structure and integration performance of a porous CVD ultra low-k dielectric	p. 41
Ultra low-k PECVD porogen approach : matrix precursors comparison and porogen removal treatment study	p. 49
Determining pore structure and growth mechanisms in templated nanoporous low-k films	p. 55
Fracture property improvements of a nanoporous thin film via post deposition bond modifications	p. 61
Effect of plasma treatment and TMCTS vapor annealing on the reinforcement of porous low-k films	p. 67
High strength low dielectric constant aromatic thermosets	p. 73
Effect of dielectric pore size distribution on interfacial adhesion of the Tantalum-Porous dielectric interface	p. 79
CVD boron carbo-nitride as pore sealant for ultra low-k interlayer dielectrics	p. 85
Employing thin film failure mechanisms to form templates for nano-electronics	p. 91
Stress generation in PECVD silicon nitride thin films for microelectronics applications	p. 97
A novel organic low-k film deposited by plasma-enhanced co-polymerization	p. 103
Mesoporous low dielectric poly(silsesquioxane) thin films templated by various surfactants	p. 109
A spin-on dielectric material for high aspect ratio gap fill	p. 115
New carbon-bridged hybrid polymers for low-k materials	p. 121
Capacitance measurement technique for determining the out-of-plane coefficient of thermal expansion for low-k dielectrics	p. 127
Determination of elastic modulus and yield stress of ultra-thin Cu and low-k films using spherical nanoindentation measurement	p. 133
Application of nanoindentation to characterize fracture in ILD films used in the BEOL	p. 139
Nanoporous materials integration into advanced microprocessors	p. 147
Double-layered structure of surface modification of low-k dielectrics induced by He plasma	p. 159
Nanoscale observation of dielectric damage to low-k MSQ interconnects from reactive ion etching and ash treatment	p. 165
First pass study of surface modified porous low-k by ion implantation for zero thickness barrier requirement of Cu/MSQ/Si stacks in copper metallization scheme	p. 171
Observation of intrusion rates of hexamethyldisilazane during supercritical carbon dioxide functionalization of triethoxyfluorosilane low-k films	p. 177
Integration of a polymer etch stop layer in a porous low-k MLM structure	p. 183
Poly(ethynyl-p-xylylene), an advanced molecular caulk CVD polymer	p. 189
The effect of methylating treatments on the dielectric reliability of low-k/Cu structures	p. 195
Structure evolution in plated Cu films	p. 203
Effect of temperature on incubation time for spontaneous morphology change in electrodeposited copper metallization	p. 209
Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications	p. 215
Integration of ALD-TaN liners on nanoporous dielectrics	p. 221
Thermal oxidation of Cu interconnects capped with CoWP	p. 227
Advanced Al damascene process for fine trench under 70 nm design rule	p. 233
Effect of microstructure and dielectric materials on stress-induced damages in damascene Cu/low-k interconnects	p. 241
Comparison of line stress predictions with measured electromigration failure times	p. 253
Stress-induced void formation in passivated Cu films	p. 259
Barrier integrity effect on leakage mechanism and dielectric reliability of copper/OSG interconnects	p. 265
Multi-via electromigration test structures for identification and characterization of different failure mechanisms	p. 271
Analysis of electromigration-induced void motion and surface oscillations in metallic thin-film interconnects	p. 277
Fundamentals of Cu/barrier-layer adhesion in microelectronic processing	p. 283
Effect of current direction on the reliability of different capped Cu interconnects	p. 289
Microstructure evolution during electric current induced thermomechanical fatigue of interconnects	p. 295
Characterization of temporary extrusion failures in quarter-micron copper interconnects	p. 301
TEM-based analysis of defects induced by AC thermomechanical versus microtensile deformation in aluminum thin films	p. 307
Electromigration of electroplated gold interconnects	p. 313
Degradation of fracture and fatigue properties of MEMS structures under cyclic loading	p. 319
Flip chip reliability of GaAs on Si thin film substrates using AuSn solder bumps	p. 327
Modeling the impact of packaging stress on device performance	p. 339
Material reliability and integration issues of polyimide and benzocyclobuteue interlayer dielectric materials	p. 345
Analysis of the interfacial reaction between Sn-3.5Ag and electroplating interlayers	p. 351
The effect of immersion Sn coating on the electromigration failure mechanism and lifetimes of Cu dual damascene interconnects	p. 357
Synchrotron X-ray micro-diffraction analysis on microstructure evolution in Sn under electromigration	p. 363
Effect of electromigration on mechanical behavior of solder joints	p. 369
Morphology change, size distribution, and nano-sized channels in Cu[subscript 6]Sn[subscript 5] intermetallic compound formation at the SnPb solder and copper interface	p. 375
A study of impact reliability of lead-free BGA balls on Au/electrolytic Ni/Cu bond pad	p. 381
Mechanisms of low-temperature Ti/Si-based wafer bonding	p. 387
Effects of bonding process parameters on wafer-to-wafer alignment accuracy in benzocyclobutene (BCB) dielectric wafer bonding	p. 393
Interconnects for elastically stretchable and deformable electronic surfaces	p. 399
Table of Contents provided by Blackwell. All Rights Reserved.