Modern Semiconductor Device Physics

by Sze, Simon M.

• ISBN13: 9780471152378
• ISBN10: 0471152374
• Edition: 1st
• Format: Hardcover
• Copyright: 1997-11-07
• Publisher: Wiley-Interscience

Summary

An in-depth, up-to-date presentation of the physics and operational principles of all modern semiconductor devices The companion volume to Dr. Sze's classic Physics of Semiconductor Devices, Modern Semiconductor Device Physics covers all the significant advances in the field over the past decade. To provide the most authoritative, state-of-the-art information on this rapidly developing technology, Dr. Sze has gathered the contributions of world-renowned experts in each area. Principal topics include bipolar transistors, compound-semiconductor field-effect-transistors, MOSFET and related devices, power devices, quantum-effect and hot-electron devices, active microwave diodes, high-speed photonic devices, and solar cells. Supported by hundreds of illustrations and references and a problem set at the end of each chapter, Modern Semiconductor Device Physics is the essential text/reference for electrical engineers, physicists, material scientists, and graduate students actively working in microelectronics and related fields.

Author Biography

S. M. SZE, PhD, is UMC Chair Professor in the Electronics Engineering Department at the National Chiao Tung University. His previous books include Semiconductor Devices, Physics of Semiconductor Devices, Second Edition, High-Speed Semiconductor Devices, and Semiconductor Sensors, all available from Wiley.

Table of Contents

Contributors	ix	(2)
Preface	xi
Introduction	1	(10)
S. M. Sze
1 Bipolar Transistors	11	(70)
Peter M. Asbeck
1.1 Introduction	11	(2)
1.2 Principles of Bipolar Transistor Operation	13	(21)
1.3 Silicon Bipolar Transistors	34	(6)
1.4 Heterojunction Bipolar Transistors	40	(26)
1.5 Bipolar Transistor Modeling	66	(6)
1.6 Summary and Future Trends	72	(5)
Problems	77	(1)
References	78	(3)
2 Compound-Semiconductor Field-Effect Transistors	81	(56)
Michael S. Shur
Tor A. Fjeldly
2.1 Introduction	81	(3)
2.2 Schottky Barriers and Ohmic Contacts	84	(5)
2.3 GaAs MESFETs	89	(15)
2.4 Heterostructure Field-Effect Transistors (HFETs)	104	(9)
2.5 Gate Leakage Current	113	(4)
2.6 Novel Compound-Semiconductor FETs	117	(9)
2.7 Summary and Future Trends	126	(2)
Problems	128	(4)
References	132	(5)
3 MOSFETs and Related Devices	137	(46)
S. J. Hillenius
3.1 Introduction	137	(2)
3.2 Scaled MOSFETs	139	(4)
3.3 CMOS BiCMOS	143	(11)
3.4 Reliability	154	(5)
3.5 SOI and 3D Structures	159	(5)
3.6 Memory Structures	164	(7)
3.7 Low-Voltage Low-Power Devices	171	(3)
3.8 Summary and Future Trends	174	(5)
Problems	179	(1)
References	180	(3)
4 Power Devices	183	(70)
B. Jayant Baliga
4.1 Introduction	183	(1)
4.2 Power Rectifiers	184	(19)
4.3 Power MOSFETs	203	(18)
4.4 Insulated-Gate Bipolar Transistors	221	(16)
4.5 MOS-Gated Thyristors	237	(8)
4.6 Silicon Carbide Power Devices	245	(1)
4.7 Summary and Future Trends	246	(1)
Problems	246	(1)
References	247	(6)
5 Quantum-Effect and Hot-Electron Devices	253	(90)
S. Luryi
A. Zaslavsky
5.1 Introduction	253	(3)
5.2 Resonant-Tunneling (RT) Structures	256	(33)
5.3 Hot-Electron Structures	289	(17)
5.4 Device Applications	306	(15)
5.5 Summary and Future Trends	321	(2)
Appendix 5.A Densities of States and Fermi Integrals	323	(2)
Appendix 5.B Drift Velocity in a Superlattice with Scattering	325	(1)
Appendix 5.C Contacts and Superlattices	326	(2)
Appendix 5.D Coherent Transistor Base Transport	328	(1)
Problems	329	(5)
References	334	(9)
6 Active Microwave Diodes	343	(66)
Heribert Eisele
George I. Haddad
6.1 Introduction	343	(9)
6.2 Transit-Time Diodes	352	(23)
6.3 Resonant-Tunneling Diodes	375	(5)
6.4 Transferred-Electron Devices	380	(18)
6.5 Summary and Future Trends	398	(3)
Problems	401	(1)
References	402	(7)
7 High-Speed Photonic Devices	409	(64)
Tien Pei Lee
S. Chandrasekhar
7.1 Introduction	409	(3)
7.2 Laser Design and Basic Principles of Operation	412	(14)
7.3 Quantum-Well and Strained-Layer Quantum-Well Lasers	426	(6)
7.4 Advanced Laser Structures and Photonic Integrated Circuits (PICs)	432	(14)
7.5 Photoreceivers and Optoelectronic Integrated Circuits (OEICs)	446	(11)
7.6 Summary and Future Trends	457	(1)
Appendix 7.A Derivation of the Linewidth Formula	457	(5)
Appendix 7.B Approximate Expression for the Transparency Carrier Area-Density and the Differential Gain for Strained-Layer Single-Quantum-Well Lasers	462	(2)
Problems	464	(2)
References	466	(7)
8 Solar Cells	473	(58)
Martin A. Green
8.1 Introduction	473	(3)
8.2 Solar Radiation and Ideal Energy-Conversion Efficiency	476	(7)
8.3 Silicon Solar Cells: Crystalline, Multicrystalline, and Amorphous	483	(20)
8.4 Compound-Semiconductor Cells	503	(10)
8.5 Modules	513	(7)
8.6 Summary and Future Trends	520	(2)
Problems	522	(4)
References	526	(5)
Appendix A List of Symbols	531	(2)
Appendix B International System of Units (SI Units)	533	(1)
Appendix C Unit Prefixes	534	(1)
Appendix D Greek Alphabet	535	(1)
Appendix E Physical Constants	536	(1)
Appendix F Lattice Constants at 300 K	537	(2)
Appendix G Properties of Important Element and Binary Semiconductors	539	(2)
Appendix H Properties of Si and GaAs at 300 K	541	(2)
Appendix I Properties of Selected III-V Compound Semiconductors	543	(2)
Appendix J Properties of SiO(2) and Si(3)N(4) at 300 K	545	(2)
Index	547