Nanoscale Phenomena in Ferroelectric Thin Films

by Hong, Seungbum

• ISBN13: 9781402076305
• ISBN10: 1402076304
• Format: Hardcover
• Copyright: 2004-01-01
• Publisher: Kluwer Academic Pub

Summary

Nanoscale Phenomena in Ferroelectric Thin Films presents the recent advances in the field of nanoscale science and engineering of ferroelectric thin films. It consists of two main parts: electrical characterization in nanoscale ferroelectric capacitor, and nano domain manipulation and visualization in ferroelectric materials. Well-known leading experts both in relevant academia and industry over the world (U.S., Japan, Germany, Switzerland, Korea) were invited to contribute to each chapter. The objectives of the book are to provide the reader with the information needed to 1.) build, see and manipulate domain structures; 2.) understand the unexplained macroscopic phenomena; and 3.) create ferroelectric thin film that shows novel and significantly improved physical, chemical properties and phenomena due to their nanoscale size. This forms the basis on which the existing technology can further improve its performance and/or a new and radical technology can evolve. Nanoscale ferroelectric materials, regardless of their dimensions (film, wire, island), are receiving great interests from academia and industry due to their various potential applications such as memory and storage devices (Ferroelectric Random Access Memory (FRAM), Probe-based Data Storage (PDS) System, etc), sensors (gas sensor, infrared detector, etc), and actuators (micro-mirrors, ultrasonic devices, etc). This book provides the compass to navigate the unknown sea of information related to the nanoscale phenomena occurring in ferroelectric thin films. The intended audience includes professional researchers and engineers in physics, electronics, chemistry, and materials science who are interested either in nanotechnology or ferroelectrics.

Table of Contents

List of Contributors	ix
Preface	xi
Acknowledgment	xiv
Part I. Electrical Characterization in Nanoscale Ferroelectric Capacitor
Testing and characterization of ferroelectric thin film capacitors
In Kyeong. Yoo
Test Circuits	3	(2)
Hysteretic Property	5	(4)
Capacitance and Current	9	(1)
Stored Energy	9	(2)
Ageing	11	(2)
Fatigue	13	(1)
Imprint	14	(2)
Leakage Current	16	(5)
Electrical Degradation	21	(1)
Breakdown	22	(4)
Pyroelectric Effect	26	(3)
Additional tests for commercial memory cells	29	(10)
References	37	(2)
Size effects in ferroelectric film capacitors: role of the film thickness and capacitor size
Igor Stolichnov
Introduction	39	(1)
Size effects: role of the ferroelectric film thickness, impact of the passive layer and local charge injection	40	(8)
Size effects: role of the capacitor size and impact of nonhomogeneous stress	48	(6)
Conclusions and outlook	54	(3)
Acknowledgements	55	(1)
References	55	(2)
Ferroelectric thin films for memory applications: nanoscale characterization by scanning force microscopy
Alexei Gruverman
Introduction	57	(2)
Experimental Approach	59	(6)
Variations in Ferroelectric Properties at the nanoscale	65	(9)
PFM studies of retention behavior	74	(7)
Nanoscale Leakage Current Mapping	81	(2)
Conclusion	83	(5)
Acknowledgment	84	(1)
References	84	(4)
Nanoscale domain dynamics in ferroelectric thin films
V. Nagarajan
R. Ramesh
Introduction	88	(1)
Thin Film Materials and Characterization	89	(3)
Polarization Relaxation at the Nanoscale	92	(5)
Nanoscale Piezoelectric and Ferroelectric Behavior	97	(9)
Conclusions	106	(5)
Acknowledgements	107	(1)
References	108	(3)
Polarization switching and fatigue of ferroelectric thin films studied by PFM
Seungbum Hong
Introduction	111	(3)
Polarization switching	114	(12)
Fatigue: suppression of switchable polarization	126	(4)
Summary and Conclusion	130	(5)
Acknowledgments	131	(1)
References	131	(4)
Part II. Nano Domain Manipulation and Visualization in Ferroelectric Materials
Domain switching and self-polarization in perovskite thin films
A. Roelofs
K. Szot
R. Waser
Introduction	135	(1)
PTO polycrystalline thin films on platinized silicon wafers	136	(4)
PTO single grains	140	(2)
Epitaxial PZT thin films on STO/LSCO	142	(4)
The origin of self-polarization	146	(11)
References	153	(4)
Dynamic-contact electrostatic force microscopy and its application to ferroelectric domain
Z. G. Khim
J. Hong
Introduction	157	(3)
Detection Mechanism of DC-EFM	160	(5)
Observation of Ferroelectric Domains	165	(9)
Control of ferroelectric domains	174	(5)
Conclusion	179	(4)
Acknowledgements	181	(1)
References	181	(2)
Polarization and charge dynamics in ferroelectric materials with SPM
S. Kalinin
D. A. Bonnell
Introduction	183	(2)
Principles of Non-contact Electrostatic SPMs	185	(1)
Domain Structure Reconstruction from SPM	186	(3)
Origins of Domain Contrast in EFM and SSPM	189	(7)
Polarization and Charge Dynamics on the BaTiO3 (100) Surface	196	(8)
Screening and Thermodynamics of Adsorption on BaTiO3 (100) Surfaces	204	(5)
Domain Selective Photochemical Activity on Ferroelectric Surfaces	209	(5)
Conclusions	214	(5)
Acknowledgements	215	(1)
References	215	(4)
Nanoscale investigation of MOCVD-Pb(Zr,Ti)O3 thin films using scanning probe microscopy
Hironori Fujisawa
Masaru Shimizu
Introduction	219	(1)
Experimental procedure	220	(2)
Local Current Flow of PZT Thin Films	222	(3)
Crystalline Structure and Ferroelectric Properties of Nanosized PZT Islands	225	(3)
Polarization Switching Processes in Epitaxial PZT Thin Films	228	(6)
Conclusions	234	(5)
Acknowledgements	235	(1)
References	235	(4)
SPM measurements of ferroelectrics at MHz frequencies
Bryan. D. Huey
Introduction	239	(1)
Sensitivity to cantilever Loading	240	(8)
Periodic excitation and detection	248	(4)
MHz measurement Techniques at the Nanoscale	252	(11)
Acknowledgements	261	(1)
References	261	(2)
Application of ferroelectric domains in nanometer scale for highdensity storage devices
Hyunjung Shin
Introduction	263	(2)
MEMS technology and Probe-based storage systems	265	(5)
Ferroelectric Domain writing and reading in nanometer scale	270	(5)
Research Issues and perspective of ferroelectric domains for storage applications	275	(1)
Summary and conclusions	276	(1)
Acknowledgments	276	(1)
References	277