Nanoscale Transistors

by Lundstrom, Mark S.; Guo, Jing

• ISBN13: 9780387280028
• ISBN10: 0387280022
• Format: Hardcover
• Copyright: 2006-01-02
• Publisher: Springer Verlag

Summary

The continuous scaling of transistors in the last half of century has been the driving force for electronics. The channel length of the transistors in production today is below 100nm. A wide variety of devices are also being explored to complement or even replace silicon transistors at molecular scales. Similarities between nanoscale and micronscale transistors exist, but nanotransistors also behave in drastically different ways. For example, ballistic transport and quantum effects become much more important. To push MOSFETs to their scaling limits and to explore devices that may complement or even replace them at molecular scale, a clear understanding of device physics at nanometer scale is necessary. The book provides a description of the recent development of theory, modeling, and simulation of nanotransistors for engineers and scientists working on nanoscale devices. Simple physical pictures and semi-analytical models, which were validated by detailed numerical simulations, are provided for both evolutionary and revolutionary nanotransistors.

Table of Contents

Preface	vii
Basic Concepts	1	(38)
Introduction	1	(1)
Distribution functions	1	(2)
3D, 2D, and 1D Carriers	3	(4)
Density of states	7	(1)
Carrier densities	8	(2)
Directed moments	10	(2)
Ballistic transport: semiclassical	12	(4)
Ballistic transport: quantum	16	(5)
The NEGF formalism	21	(4)
Scattering	25	(1)
Conventional transport theory	26	(5)
Resistance of a ballistic conductor	31	(2)
Coulomb blockade	33	(4)
Summary	37	(2)
Devices, Circuits and Systems	39	(44)
Introduction	39	(1)
The MOSFET	40	(5)
1D MOS Electrostatics	45	(9)
2D MOS Electrostatics	54	(7)
MOSFET Current-Voltage Characteristics	61	(6)
The bipolar transistor	67	(2)
CMOS Technology	69	(6)
Ultimate limits	75	(5)
Summary	80	(3)
The Ballistic Nanotransistors	83	(32)
Introduction	83	(3)
Physical view of the nanoscale MOSFETs	86	(5)
Natori's theory of the ballistic MOSFET	91	(3)
Nondegenerate, degenerate, and general carrier statistics	94	(11)
The ballistic MOSFET (nondegenerate conditions)	94	(3)
The ballistic MOSFET (TL = 0, degenerate conditions)	97	(6)
The ballistic MOSFET (general conditions)	103	(2)
Beyond the Natori model	105	(5)
Role of the quantum capacitance	105	(3)
Two dimensional electrostatics	108	(2)
Discussion	110	(3)
Summary	113	(2)
Scattering Theory of the MOSFET	115	(25)
Introduction	115	(2)
MOSFET physics in the presence of scattering	117	(3)
The scattering model	120	(6)
The transmission coefficient under low drain bias	126	(3)
The transmission coefficient under high drain bias	129	(5)
Discussion	134	(2)
Summary	136	(4)
Nanowire Field-Effect Transistors	140	(42)
Introduction	140	(1)
Silicon nanowire MOSFETs	140	(13)
Evaluation of the I-V characteristics	143	(1)
The I-V characteristics for nondegenerate carrier statistics	143	(2)
The I-V characteristics for degenerate carrier statistics	145	(2)
Numerical results	147	(6)
Carbon nanotubes	153	(2)
Bandstructure of carbon nanotubes	155	(14)
Bandstructure of graphene	155	(3)
Physical structure of nanotubes	158	(2)
Bandstructure of nanotubes	160	(5)
Bandstructure near the Fermi points	165	(4)
Carbon nanotube FETs	169	(2)
Carbon nanotube MOSFETs	171	(2)
Schottky barrier carbon nanotube FETs	173	(3)
Discussion	176	(3)
Summary	179	(3)
Transistors at the Molecular Scale	182	(31)
Introduction	182	(1)
Electronic conduction in molecules	183	(4)
General model for ballistic nanotransistors	187	(6)
MOSFETs with 0D, 1D, and 2D channels	193	(3)
Molecular transistors?	196	(3)
Single electron charging	199	(4)
Single electron transistors	203	(6)
Summary	209	(4)
Index	213