Nitride Semiconductor Devices Principles and Simulation

by Piprek, Joachim

• ISBN13: 9783527406678
• ISBN10: 3527406670
• Edition: 1st
• Format: Hardcover
• Copyright: 2007-04-09
• Publisher: Wiley-VCH

Summary

This is the first book to be published on physical principles, mathematical models, and practical simulation of GaN-based devices. Gallium nitride and its related compounds enable the fabrication of highly efficient light-emitting diodes and lasers for a broad spectrum of wavelengths, ranging from red through yellow and green to blue and ultraviolet. Since the breakthrough demonstration of blue laser diodes by Shuji Nakamura in 1995, this field has experienced tremendous growth worldwide. Various applications can be seen in our everyday life, from green traffic lights to full-color outdoor displays to high-definition DVD players. In recent years, nitride device modeling and simulation has gained importance and advanced software tools are emerging. Similar developments occurred in the past with other semiconductors such as silicon, where computer simulation is now an integral part of device development and fabrication.
This book presents a review of modern device concepts and models, written by leading researchers in the field. It is intended for scientists and device engineers who are interested in employing computer simulation for nitride device design and analysis.

Author Biography

Joachim Piprek received his doctorate in physics from Humboldt University Berlin, Germany. He has taught graduate courses at universities in Germany, Sweden, and in the United States. Most recently, he was a professor at the University of California at Santa Barbara, where he collaborated for several years with Shuji Nakamura on nitride device simulation and analysis. Joachim Piprek is currently the director of the NUSOD Institute (www.nusod.org). He has previously published two books and authored more than 100 journal and conference publications in this field.

Table of Contents

Preface

List of Contributors

Material Properties

Introduction

A Brief History

Unique Material Properties

Thermal Parameters

References

Electron Bandstructure Parameters

Introduction

Band Structure Models

Band Parameters

Conclusions

References

Spontaneous and Piezoelectric Polarization: Basic Theory vs. Practical Recipes

Why Spontaneous Polarization in III-V Nitrides?

Theoretical Prediction of Polarization Properties in AlN, GaN and InN

Piezoelectric and Pyroelectric Effects in III-V Nitrides Nanostructures

Polarization Properties in Ternary and Quaternary Alloys

Orientational Dependence of Polarization

References

Transport Parameters for Electrons and Holes

Introduction

Numerical Simulation Model

Analytical Models for the Transport Parameters

GaN Transport Parameters

AlN Transport Parameters

InN Transport Parameters

Conclusions

References

Optical Constants of Bulk Nitrides

Introduction

Dielectric Function and Band Structure

Experimental Results

Modeling of the Dielectric Function

References

Intersubband Absorption in AlGaN/GaN Quantum Wells

Introduction

Theoretical Model

Numerical Implementation

Absorption Energy in AlGaN-GaN MQWs

Conclusions

References

Interband Transitions in InGaN Quantum Wells

Introduction

Theory

Theory-Experiment Gain Comparison

Absorption/Gain

Spontaneous Emission

Auger Recombinations

Internal Field Effects

Summary

References

Electronic and Optical Properties of GaN-based Quantum Wells with (1010) Crystal Orientation

Introduction

Theory

Non-Markovian gain model with many-body effects

Results and Discussion

Summary

References

Carrier Scattering in Quantum-Dot Systems

Introduction

Scattering Due to Carrier-Carrier Coulomb Interaction

Scattering Due to Carrier-Phonon Interaction

Summary and Outlook

References

Devices

AlGaN/GaN High Electron Mobility Transistors

Introduction

Physics-based Simulations

Conclusions

References

Intersubband Optical Switches for Optical Communications

Introduction

Physics of ISBT in Nitride MQWs

Calculation of Absorption Spectra

FDTD Simulator for GaN/AlGaN ISBT Switches

References

Intersubband Electroabsorption Modulator

Introduction

Modulator Structure

Model

Results

Summary

References

Ultraviolet Light-Emitting Diodes

Introduction

Device Structure

Physical Models and Parameters

Comparison Between Simulated and Experimental Results

Performance Optimization

Conclusion

References

Visible Light-Emitting Diodes

Introduction

Simulation Approach and Materials Properties

Device Analysis

Novel LED Structures

Conclusion

References

Simulation of LEDs with Phosphorescent Media for the Generatio

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