Operation and Modeling of the Mos Transistor

by Tsividis, Yannis

• ISBN13: 9780195170146
• ISBN10: 0195170148
• Edition: 2nd
• Format: Hardcover
• Copyright: 2003-06-26
• Publisher: Oxford University Press

Summary

Extensively revised and updated, this, the second edition of the highly praised text Operation and Modeling of The MOS Transistor , has become a standard in academia and industry. The book provides a thorough treatment of the MOS transistor-the key element of most modern microelectronic chips. KEY FEATURES · Unified, careful treatment. The book covers in depth the development of many important models, ranging from the simple to the sophisticated, with the connection between models clearly identified. Many aspects of modeling are covered, including: dc, ac, small-signal, large-signal transient, quasi-static, nonquasi-static, and noise. · Expanded coverage. New material is included on a number of topics, including charge sheet models, small-dimension effects, noise, and modeling for RF applications. · New chapter on modeling for CAD. A completely new chapter discusses the context, considerations, and pitfalls associated with the development of models for computer-aided design, and describes ways to evaluate them. · Extensive Bibliography. A thoroughly updated, greatly expanded bibliography is provided.

Table of Contents

Semiconductors, Junctions, and Mosfet Overview

Introduction

Semiconductors

Conduction

Transit Time

Drift

Diffusion

Contact Potentials

The pn Junction

Overview of the MOS Transistor

Basic Structure

A Qualitative Description of MOS Transistor Operations

A Fluid Dynamical Analog

MOS Transistor Characteristics

A Brief Overview of this Book

The Two-Terminal MOS Structure

Introduction

The Flat-Band Voltage

Potential Balance and Charge Balance

Effect of Gate-Substance Voltage on Surface Condition

Flat-Band Condition

Accumulation

Depletion and Inversion

General Analysis

Inversion

General Relations and Regions of Inversion

Strong Inversion

Weak Inversion

Moderate Inversion

Small-Signal Capacitance

Summary of Properties of the Regions of Inversion

The Three-Terminal MOS Structure

Introduction

Contacting the Inversion Layer

The Body Effect

Regions of Inversion

Approximate Limits

Strong Inversion

Weak Inversion

Moderate Inversion

A "VCB Control" Point of View

Fundamentals

"Pinchoff" Voltage

Expressions in Terms of the "Pinchoff" Voltage

The Four-Terminal MOS Transistor

Introduction

Transistor Regions of Operation

General Charge Sheet Models

Approximate Limits

Simplified Charge Sheet Models

Model Based on Quasi-Fermi Potentials

Reasons of Inversion in Terms of Terminal Voltages

Strong Inversion

Complete Symmetric Strong-Inversion Model

Simplified Symmetric Strong-Inversion Model

Simplified, Source-Referenced, Strong-Inversion Model

Model Origin Summary

Weak Inversion

Moderate Inversion

Interpolation Models

Source-Referenced vs. Body-Referenced Modeling

Effective Mobility

Temperature Effects

Breakdown

The p-Channel MOS Transistor

Enhancement-Mode and Depletion-Mode Transistors

Model Parameter Values, Model Accuracy, and Model Comparison References

MOS Transistors and Ion-Implanted Channels

Introduction

Enhancement nMOS Transistors

Preliminaries

Charges and Threshold Voltages

Drain-to-Source Current Model for Strong Inversion

Simplified Model for Strong Inversion

Weak Inversion

Depletion nMOS Transistors

The Need for an n-Type Implant

Charges and Threshold Voltage

Transistor Operation5.4. Enhancement pMOS Transistors

Surface-Channel Enhancement-Mode pMOS

Buried-Channel Enhancement-Mode pMOS

Small-Dimension Effectsby D. Antoniadas, Massachuseets Institute of Technology

Introduction

Channel Length Modulation

Barrier Lowering, Two-Dimensional Charge Sharing, and Threshold Voltage

Introduction

Short-Channel Devices

Narrow-Channel Devices

Summary and Comments

Punchthrough

Carrier Velocity Syndrome

Hot Carrier Effects-Substrate Current, Gate Current, and Breakdown

Scaling

Effect of Surface and Drain Series Resistances

Effects Due to Thin Oxides and High Doping

The MOS Transistor in Dynamic Operation-Large-Signal Modeling

Introduction

Quasi-Static Operation

Terminal Currents in Quasi-Static Operation

Evaluation of Charges in Quasi-Static Operation

Introduction

Strong Inversion

Moderate Inversion

Weak Inversion

General Charge Sheet Model

Depletion

Accumulation

Plots of Charges versus VGS

Uses of Charges in Evaluating Terminal Currents

Transit Time Under DC Conditions

Limitations of the Quasi-Static Model

Non-Quasi-Static Modeling

Introduction

The Continuity Equation

Non-Quasi-Static Analysis

Small-Signal Modeling for Low and Medium Frequencies

Introduction

A Low-Frequency Small-Signal Model for the Intrinsic Part

A Two-Path View

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