Operation and Modeling of the MOS Transistor

by Tsividis, Yannis; McAndrew, Colin

• ISBN13: 9780195170153
• ISBN10: 0195170156
• Edition: 3rd
• Format: Hardcover
• Copyright: 2010-10-29
• Publisher: Oxford University Press

Summary

Operation and Modeling of the MOS Transistor has become a standard in academia and industry. The book provides a thorough treatment of the MOS transistor-the key element of most modern microelectronic chips. The Third Edition of this well respected book is fully updated, making several key improvements in content, organization and pedagogy. The text has also been enhanced by changing notation to standard units of measurement, introducing an "Overview of the MOS Transistor" in the first chapter, and increasing the number of examples.

New to this edition:

* Energy bands and the energy barrier viewpoint are integrated into the discussion in a smooth, simple manner

* Expanded discussion of small-dimension effects, including velocity saturation, drain-induced barrier lowering, ballistic operation, polysilicon depletion, quantum effects, gate tunneling current, and gate-induced drain leakage

* Expanded discussion of small-signal modeling, including gate and substrate current modeling and flicker noise

* New chapter on substrate nonuniformity and structural effects, discussing transversal and lateral (halo) doping nonuniformity, stress and well proximity effects, and statistical variability

* A completely re-written chapter on modeling for circuit simulation, covering the considerations and pitfalls in the development of models for computer-aided design

* Extensively updated bibliography

* An accompanying website includes additional details not covered in the text, as well as model computer code

Author Biography

Yannis Tsividis received the B.S. degree from the University of Minnesota, Minneapolis, in 1972, and the M.S. and Ph.D. degrees from the University of California, Berkeley, in 1973 and 1976, respectively.
His involvement with MOS transistors began in the early seventies as part of his industrial and doctoral work. In 1975, to prove the feasibility of MOS technology for analog and mixed-signal integrated circuits, he designed and built the first fully integrated MOS operational amplifier and demonstrated its use in a PCM codec. Since that time, much of his work has focused on device and circuit issues in the merging of analog and digital circuits on the same chip. In addition to this book, he has written Mixed Analog-Digital Devices and Technology (World Scientific, 2002) and has edited several other books. He is the inventor/coinventor in over 20 patents.
Dr. Tsividis is Charles Batchelor Professor of Electrical Engineering at Columbia University in New York. He has also taught, as part of regular or visiting appointments, at the University of California, Berkeley, the Massachusetts Institute of Technology, and the National Technical University of Athens. He has worked for Motorola Semiconductor and for AT&T Bell Laboratories.
Dr. Tsividis received the 1984 IEEE W.R.G. Baker Award for the best IEEE publication, and is recipient or co-recipient of best paper awards from the European Solid-State Circuits Conference in 1986, the IEEE International Solid-State Circuits Conference in 2003, and the IEEE Circuits and Systems Society (Darlington Award, 1987; Guillemin-Cauer Award, 1998 and 2008). He has received Columbia's Presidential Award for Outstanding Teaching in 2003, and the IEEE Undergraduate Teaching Award in 2005. He is a Fellow of the IEEE, and received the IEEE Gustav Robert Kirchhoff Award in 2007.
Colin McAndrew received the B.E. (Hons) degree in Electrical Engineering from Monash University, Victoria, Australia, in 1978 and the M.A.Sc. and Ph.D. degrees in Systems Design Engineering from the University of Waterloo, Ontario, Canada, in 1982 and 1984, respectively.
He became involved with modeling semiconductor devices for circuit simulation in 1987 and has contributed to the development of models for MOS, bipolar, and passive devices. He developed the backward-propagation-of-variation (BPV) technique for statistical modeling and has been a primary advocate of the use of Verilog-A and compilers for device modeling.
He is a Fellow of the IEEE, was the recipient of the Ian Langlands Medal of the Institute of Engineers of Australia ,1978, and was recognized with the IEEE BCTM (Bipolar/BiCMOS Circuits and Technology Meeting) award in 2005. He has received best paper awards for the IEEE ICMTS (International Conference on Microelectronic Test Structures) in 1993 and the IEEE CICC (Custom Integrated Circuits Conference) in 2002. He is an editor of the IEEE Transactions on Electron Devices, and is or has been on the technical program committees for the IEEE BCTM, ICMTS

Table of Contents

Semiconductors, Junctions, and Mosfet Overview

Introduction

Semiconductors

Intrinsic Semiconductors, Free Electrons, and Holes

Extrinsic Semiconductors

Equilibrium in the Absence of Electric Field

Equilibrium in the Presence of Electric Field

Semiconductors in Nonequilibrium

Quasi-Fermi Levels

Relations between Charge Density, Electric Field, and Potentials Poisson's Equation

Conduction

Transit Time

Drift

Diffusion

Total Current

Contact Potentials

Thepn Junction

Overview of the MOS Transistors

Basic Structure

A Qualitative Description of MOS Transistor Operation

A Fluid Dynamical Analog

MOS Transistor Characteristics

Fabrication Processes and Device Features

A Brief Overview of This Book

References

Problems

The Two Terminal MOS Structure

Introduction

The Flat-Band Voltage

Potential Balance and Charge Balance

Effect of Gate - Body Voltage on Surface Condition

Flat -Band Condition

Accumulation

Depletion and Inversion

General Analysis

Accumulation and Depletion

Inversion

General Relations and Regions of Inversion

Strong Inversion

Weak Inversion

Moderate Inversion

Small - Signal Capacitance

Summary of Properties of the Regions of Inversion

References

Problems

The Three Terminal MOS Structure

Introduction

Contacting the Inversion Layer

The Body Effect

Regions of Inversion

Approximate Limits

Strong Inversion

Weak Inversion

A "CB Control" Point of View

Fundamentals

The "pinchoff voltage"

References

Problems

The Four - Terminal MOS Transistor

Introduction

Transistor Regions of Operation

Complete All - Region Model

Current Equations

Simplified All - Region Models

Linearizing the Depletion Region Charge

Body -Referenced Simplified All - Region Models

Source - Referenced Simplified All - Region Models

Charge Formulation of Simplified All-Region models

Models Based on Quasi - Fermi Potentials

Regions of Inversion in Terms of Terminal Voltages

Strong Inversion

Complete Strong -Inversion Model

Body - Referenced Simplified Strong Inversion Model

Source - Referenced Simplified Strong - Inversion Model

Model Origin Summary

Weak Inversion

Special Conditions in Weak Inversion

Moderate Inversion and Single - Piece Models

Source - Referenced vs. Body - Referenced Modeling

Effective Mobility

Effect of Extrinsic Source and Drain Series Resistances

Temperature Effects

Breakdown

The p-Channel MOS Transistor

Enhancement - Mode and Depletion - Mode Transistors

Model Parameter Values, Model Accuracy, and Model Comparison

References

Problems

Small Dimension Effects

Introduction

Carrier Velocity Saturation

Channel Length Modulation

Charge Sharing

Introduction

Short - Channel Devices

Narrow - Channel Devices

Limitations of Charge Sharing Models

Drain - Induced Barrier Lowering

Punchthrough

Combining Several Small - Dimension Effects Into One Model - A Strong Inversion Example

Hot Carrier Effects

Impact Ionization

Velocity Overshoot and Ballistic Opeation

Polysilicon Depletion

Quantum Mechanical Effects

DC Gate Current

Junction Leakage

Band - to - Band Tunneling

GIDL

Leakage Currents - Examples

The Quest for Ever - Smaller Devices

Introduction

Classical Scaling

Modern Scaling

References

Problems

The MOS Transistor In Dynamic Operation - Large Signal Modeling

Introduction

Quasi - Static Operation

Terminal Currents in Quasi - Static Operation

Evaluation of Intrinsic Chargers in Quasi - Static Operation

Introduction

Strong Inversion

Moderate Inversion

Weak Inversion

All - Region Model

Depletion and Accumulation

Plots of Chargers versus VGS

Use of Intrinsic Chargers in Evaluation the Terminal Currents

Transit Time Under DC Conditions

Limitations of the Quasi - Static Model

Non - Quasi - Static Modeling

Introduction

The Continuity Equation

Non - Quasi - Static Analysis

Extrinsic Parasitics

Extrinsic Capacitances

Extrinsic Resistance

Temperature Dependence

Simplified Models

References

Problems

Small - Signal Modeling for Low and Medium Frequencies

Introduction

A Low - Frequency Small - Signal Model for the Intrinsic Part

Introduction

Small - Signal Model for the Drain - Source Current

Small - Signal Model for the Gate and Body Current

Complete Low - Frequency Small - Signal Model for the Intrinsic Part

Strong Inversion

Weak Inversion

Moderate Inversion

All - Region Models

A Medium - Frequency Small - Signal Model for the Intrinsic Part

Introduction

Intrinsic Capacitances

Including the Extrinsic Part

Noise

Introduction

White Noise

Flicker Noise

Noise in Extrinsic Resistances

Including Noise in Small - Signal Circuits

All - Region Models

References

Problems

High Frequency Small - Signals Models

Introduction

A Complete Quasi - Static Model

Complete Description of Intrinsic Capacitance Effects

Small - Signal Equivalent Circuit Topologies

Evaluation of Capacitances

Frequency Region of Validity

y- Parameter Models

Non - Quasi - Static Models

Introduction

A Non - Quasi - Static Strong - Inversion Model

Other Approximation and Higher - Oder Models

Model Comparison

High - Frequency Noise

Consideration In MOSFet Modeling for RF Applications

References

Problems

Substrate Nonuniformity and Structural Effects

Introduction

Ion Implantation and Substrate Nonuniformity

Substrate Transverse Nonuniformity

Preliminaries

Threshold Voltage

Drain Current

Buried Channel Devices

Substrate Lateral Nonuniformity

Well Proximity Effect

Stress Effects

Statistical Variability

References

Problems

MOSFET Modeling for Circuit Simulation

Introduction

Types of Models

Models for Device Analysis and Design

Device Models for Circuit Simulation

Attributes of Good Compact Models

Model Formulation

Model Implementation in Circuit Simulators

Model Testing

Parameter Extraction

Simulation and Extraction for RF Applications

Common MOSFET Models Available in Circuit Simulators

BSIM

EKV

HiSIM2

PSP

References

Problems

Appendices

Basic Laws of Electrostatic in One Dimension

Quasi - Fermi Levels and Currents

General Analysis of the Two - Terminal MOS Structure

Careful Definitions for the Limits of Moderate Inversion

General Analysis of the Three - Terminal MOS Structure

Drain Current Formulation Using Quasi - Fermi Potentials

Modeling Based on Pinchoff Voltage and Related Topics

Evaluation of the Intrinsic Transient Source and Drain Current

Quantities Use in the Derivation of the Non-Quasi -Static Y-Parameter Model

Analysis of Buried Channel Devices

MOSFET Model Benchmark Tests

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