Optical Properties of Crystalline and Amorphous Semiconductors

by Adachi, Sadao

• ISBN13: 9780792385639
• ISBN10: 0792385632
• Format: Hardcover
• Copyright: 1999-07-01
• Publisher: Kluwer Academic Pub

Summary

Optical Properties of Crystalline and Amorphous Semiconductors: Materials and Fundamental Principles presents an introduction to the fundamental optical properties of semiconductors. This book presents tutorial articles in the categories of materials and fundamental principles (Chapter 1), optical properties in the reststrahlen region (Chapter 2), those in the interband transition region (Chapters 3 and 4) and at or below the fundamental absorption edge (Chapter 5). Optical Properties of Crystalline and Amorphous Semiconductors: Materials and Fundamental Principles is presented in a form which could serve to teach the underlying concepts of semiconductor optical properties and their implementation. This book is an invaluable resource for device engineers, solid-state physicists, material scientists and students specializing in the fields of semiconductor physics and device engineering.

Table of Contents

Preface	xi
Acknowledgments	xiii
Contents of the Companion Book	xv
Abbreviations and Acronyms	xvii
Materials, Properties, and Basic Formulas	1	(32)
Materials and Their Structures	1	(6)
Crystalline Materials	1	(1)
Diamond-, zinc-blende-, and wurtzite-type crystals	1	(4)
Silicon carbide	5	(1)
Rocksalt-type crystals	5	(1)
Amorphous Materials	6	(1)
Brillouin Zones and Electronic Energy-Band Structure	7	(13)
Brillouin Zone	7	(1)
Face-centered cubic lattice	7	(1)
Hexagonal lattice	8	(2)
Rhombohedral lattice	10	(1)
Electronic Energy-Band Structure	10	(1)
Diamond-type crystal: Si	10	(3)
Zinc-blende-type crystal: GaAs	13	(3)
Wurtzite-type crystal: CdS	16	(4)
Optical Constants and Some Dispersion Relations	20	(13)
Dielectric Constant: Tensor Representation	20	(1)
Optical Dispersion Relations and Sum Rules	21	(4)
Optical Spectrum and Its Classification into Several Regions	25	(1)
Crystalline materials	25	(3)
Amorphous materials	28	(2)
References	30	(3)
The Reststrahlen Region	33	(30)
Static and High-Frequency Dielectric Constants	33	(8)
General Consideration	33	(5)
Alloys	38	(1)
Temperature and Pressure Effects	38	(3)
Reststrahlen Spectra	41	(22)
Crystalline Materials	41	(1)
Zinc-blende-type crystals	41	(7)
Wurtzite-type crystals	48	(1)
Alloys	48	(8)
Temperature effect	56	(1)
Amorphous Materials	56	(5)
References	61	(2)
The Interband Transition Region: Crystalline Materials	63	(68)
Optical Dispersion Model	63	(21)
Critical Points and Dispersion Theory	63	(1)
Harmonic oscillator approximation	64	(2)
Standard critical-point model	66	(3)
Model dielectric function	69	(3)
E0 and E0 + Δ0 transitions	72	(2)
E1 and E1 + Δ1 transitions	74	(3)
E0' and E2 transitions	77	(2)
Indirect-band-gap transitions	79	(2)
Plasma and d-Band Effects	81	(3)
Temperature, Pressure, and Doping Effects	84	(22)
Temperature Effect	84	(11)
Pressure Effect	95	(7)
Doping Effect	102	(4)
Fresnel Reflection Coefficient, Ellipsometry Definition, and Surface Oxide Effect	106	(14)
Fresnel Reflection Coefficient	106	(1)
Isotropic medium	106	(3)
Anisotropic medium	109	(2)
Reflection at Multiple Interfaces	111	(2)
Ellipsometry Definition and Optical Constants	113	(1)
Effect of Surface Oxide	114	(6)
Effect of Surface Roughness: Effective-Medium Approximation	120	(11)
Effective-Medium Model	120	(2)
Roughened Surface	122	(4)
References	126	(5)
The Interband Transition Region: Amorphous and Microcrystalline Materials	131	(48)
Amorphous Materials	131	(24)
Optical Band Gap	131	(1)
Definition	131	(5)
Temperature and pressure effects	136	(1)
Temperature effect	136	(2)
Pressure effect	138	(2)
Optical Dispersion Model	140	(1)
Density-of-states model	140	(1)
Plasma-frequency (Campi-Coriasso) model	141	(1)
Penn-gap (Forouhi-Bloomer) model	142	(2)
Model dielectric function	144	(10)
Temperature, Pressure, and Doping Effects on Optical Constants	154	(1)
Microcrystalline Materials	155	(24)
General Remarks	155	(1)
Amorphization of Crystalline Si by Ion Implantation	156	(1)
As-implanted samples	156	(3)
Implanted and annealed samples	159	(3)
Recrystallization of Amorphous Si by Thermal Annealing	162	(1)
LRA--EMA analysis	162	(6)
MDF analysis	168	(7)
References	175	(4)
At or Below the Fundamental Absorption Edge	179	(72)
Optical Absorption	179	(28)
One-Electron Approximation	179	(1)
Direct-gap edge	179	(2)
Indirect-gap edge	181	(2)
Exciton Effect	183	(1)
Direct exciton	183	(9)
Indirect exciton	192	(2)
Urbach Tail	194	(1)
Temperature, Pressure, and Doping Effects	195	(1)
Temperature effect	195	(3)
Pressure effect	198	(4)
Doping effect	202	(4)
Amorphous Materials	206	(1)
Refractive Index	207	(25)
Theoretical Expression	207	(1)
Sellmeier equation	207	(1)
Ketteler--Helmholtz formula	208	(1)
Single-oscillator model	208	(1)
Modified single-oscillator model	208	(1)
Pikhtin--Yas'kov formula	209	(1)
Exponential band-edge model	209	(1)
Simplified interband-transition model	210	(1)
Quantum-density-matrix formulation	211	(1)
Empirical Formula	211	(2)
Experimental Data	213	(1)
Comparison with calculated results	213	(3)
Alloy-composition variation	216	(2)
Temperature, pressure, and doping effects	218	(1)
Temperature effect	218	(7)
Pressure effect	225	(2)
Doping effect	227	(5)
Free-Carrier Absorption and Related Phenomena	232	(19)
Free-Carrier Absorption	232	(6)
Interband Absorption	238	(1)
Interconduction-band absorption	238	(4)
Intervalence-band absorption	242	(4)
Carrier-Induced Change in Refractive Index	246	(1)
References	247	(4)
Concluding Remarks	251	(6)
References	256	(1)
Index	257