Properties of Group-IV, III-V and II-VI Semiconductors

by Adachi, Sadao

• ISBN13: 9780470090329
• ISBN10: 0470090324
• Edition: 1st
• Format: Hardcover
• Copyright: 2005-04-01
• Publisher: WILEY

Summary

Almost all the semiconductors of practical interest are the group-IV, III-V and II-VI semiconductors and the range of technical applications of such semiconductors is extremely wide. The purpose of this book is twofold: * to discuss the key properties of the group-IV, III-V and II-VI semiconductors * to systemize these properties from a solid-state physics aspect The majority of the text is devoted to the description of the lattice structural, thermal, elastic, lattice dynamic, electronic energy-band structural, optical and carrier transport properties of these semiconductors. Some corrective effects and related properties, such as piezoelectric, elastooptic and electrooptic properties, are also discussed. The book contains convenient tables summarizing the various material parameters and the definitions of important semiconductor properties. In addition, graphs are included in order to make the information more quantitative and intuitive. The book is intended not only for semiconductor device engineers, but also physicists and physical chemists, and particularly students specializing in the fields of semiconductor synthesis, crystal growth, semiconductor device physics and technology.

Author Biography

Sadao Adachi is the author of Properties of Group-IV, III-V and II-VI Semiconductors, published by Wiley.

Table of Contents

Series Preface	xiii
Preface	xv
Acknowledgments/Dedication	xvii
1 Structural Properties	1	(22)
1.1 Ionicity	1	(2)
1.1.1 Definition	1	(2)
(a) Phillips ionicity	2	(1)
(b) Pauling ionicity	2	(1)
(c) Harrison ionicity	2	(1)
1.1.2 Ionicity Value	3	(1)
1.2 Elemental Isotopic Abundance and Molecular Weight	3	(1)
1.2.1 Elemental Isotopic Abundance	3	(1)
1.2.2 Molecular Weight	4	(1)
1.3 Crystal Structure and Space Group	4	(8)
1.3.1 Crystal Structure	4	(6)
(a) Diamond, zinc-blende and wurtzite structures	4	(3)
(b) Hexagonal and rhombohedral structures	7	(2)
(c) Rocksalt structure	9	(1)
1.3.2 Space Group	10	(2)
1.4 Lattice Constant and Related Parameters	12	(2)
1.4.1 Lattice Constant	12	(1)
(a) Room-temperature value	12	(1)
(b) Near-neighbor distance	12	(1)
(c) External perturbation effect	13	(1)
1.4.2 Molecular and Crystal Densities	13	(1)
1.5 Structural Phase Transitions	14	(1)
1.6 Cleavage	15	(5)
1.6.1 Cleavage Plane	15	(3)
1.6.2 Surface Energy	18	(5)
(a) Theoretical value	18	(2)
(b) Experimental value	20	(1)
References	20	(3)
2 Thermal Properties	23	(18)
2.1 Melting Point and Related Parameters	23	(3)
2.1.1 Phase Diagram	23	(1)
2.1.2 Melting Point	23	(3)
2.2 Specific Heat	26	(2)
2.3 Debye Temperature	28	(2)
2.4 Thermal Expansion Coefficient	30	(3)
2.5 Thermal Conductivity and Diffusivity	33	(6)
2.5.1 Thermal Conductivity	33	(6)
2.5.2 Thermal Diffusivity	39	(1)
References	39	(2)
3 Elastic Properties	41	(32)
3.1 Elastic Constant	41	(10)
3.1.1 General Remarks	41	(1)
3.1.2 Room-temperature Value	42	(6)
3.1.3 External Perturbation Effect	48	(5)
(a) Temperature effect	48	(2)
(b) Pressure effect	50	(1)
3.2 Third-order Elastic Constant	51	(2)
3.3 Young's Modulus, Poisson's Ratio and Similar Properties	53	(9)
3.3.1 Young's Modulus and Poisson's Ratio: Cubic Lattice	53	(3)
3.3.2 Bulk Modulus, Shear Modulus and Similar Properties: Cubic Lattice	56	(4)
3.3.3 Young's Modulus and Poisson's Ratio: Hexagonal Lattice	60	(1)
3.3.4 Bulk Modulus, Shear Modulus and Similar Properties: Hexagonal Lattice	61	(1)
3.4 Microhardness	62	(6)
3.5 Sound Velocity	68	(4)
References	72	(1)
4 Lattice Dynamic Properties	73	(22)
4.1 Phonon Dispersion Relation	73	(7)
4.1.1 Brillouin Zone	73	(2)
(a) Face-centered cubic lattice	74	(1)
(b) Hexagonal lattice	74	(1)
(c) Rhombohedral lattice	75	(1)
4.1.2 Phonon Dispersion Curve	75	(4)
(a) Cubic lattice	75	(2)
(b) Hexagonal lattice	77	(2)
4.1.3 Phonon Density of States	79	(1)
4.2 Phonon Frequency	80	(7)
4.2.1 Room-temperature Value	80	(4)
4.2.2 External Perturbation Effect	84	(4)
(a) Temperature effect	84	(2)
(b) Pressure effect	86	(1)
4.3 Mode Grüneisen Parameter	87	(1)
4.4 Phonon Deformation Potential	88	(4)
4.4.1 Cubic Lattice	88	(3)
4.4.2 Hexagonal Lattice	91	(1)
References	92	(3)
5 Collective Effects and Some Response Characteristics	95	(8)
5.1 Piezoelectric and Electromechanical Constants	95	(4)
5.1.1 Piezoelectric Constant	95	(4)
(a) Piezoelectric stress constant	95	(3)
(b) Piezoelectric strain constant	98	(1)
5.1.2 Electromechanical Coupling Constant	99	(1)
5.2 Fröhlich Coupling Constant	99	(2)
References	101	(2)
6 Energy-band Structure: Energy-band Gaps	103	(44)
6.1 Basic Properties	103	(11)
6.1.1 Energy-band Structure	103	(8)
(a) Diamond-type semiconductor	104	(2)
(b) Zinc-blende-type semiconductor	106	(2)
(c) Wurtzite-type semiconductor	108	(3)
6.1.2 Electronic Density of States	111	(3)
6.2 E0-gap Region	114	(16)
6.2.1 Effective Γ-point Hamiltonian	114	(1)
6.2.2 Room-temperature Value	115	(5)
6.2.3 External Perturbation Effect	120	(6)
(a) Temperature effect	120	(4)
(b) Pressure effect	124	(1)
(c) Temperature and pressure coefficients	124	(2)
6.2.4 Doping Effect	126	(4)
6.3 Higher-lying Direct Gap	130	(7)
6.3.1 Cubic Semiconductor	130	(7)
(a) Room-temperature value	130	(3)
(b) External perturbation effect	133	(4)
6.3.2 Hexagonal and Rhombohedral Semiconductors	137	(1)
6.4 Lowest Indirect Gap	137	(5)
6.4.1 Room-temperature Value	137	(1)
6.4.2 External Perturbation Effect	138	(9)
(a) Temperature effect	138	(1)
(b) Pressure effect	139	(3)
(c) Temperature and pressure coefficients	142	(1)
6.5 Conduction-valley Energy Separation	142	(1)
6.6 Direct-Indirect-gap Transition Pressure	142	(1)
References	143	(4)
7 Energy-band Structure: Effective Masses	147	(26)
7.1 Electron Effective Mass: Γ Valley	147	(11)
7.1.1 General Remarks	147	(2)
7.1.2 Numerical Value	149	(2)
7.1.3 Polaron Effect	151	(1)
7.1.4 External Perturbation and Doping Effects	152	(6)
(a) Temperature effect	152	(1)
(b) Pressure effect	153	(2)
(c) Doping effect	155	(3)
7.2 Electron Effective Mass: Satellite Valley	158	(1)
7.2.1 Camel's Back Structure	158	(1)
7.2.2 Numerical Value	159	(1)
7.3 Hole Effective Mass	159	(12)
7.3.1 Effective Γ-valence-band Hamiltonian and Luttinger Parameter	159	(5)
7.3.2 Numerical Value	164	(4)
(a) Cubic semiconductor	164	(3)
(b) Hexagonal and rhombohedral semiconductors	167	(1)
7.3.3 Polaron Effect	168	(2)
7.3.4 External Perturbation and Doping Effects	170	(3)
(a) Temperature effect	170	(1)
(b) Pressure effect	170	(1)
(c) Doping effect	170	(1)
References	171	(2)
8 Deformation Potentials	173	(22)
8.1 Intravalley Deformation Potential: Γ Point	173	(10)
8.1.1 Conduction Band	173	(2)
8.1.2 Valence Band	175	(4)
8.1.3 E0 Gap	179	(2)
8.1.4 Optical Phonon Deformation Potential	181	(2)
8.2 Intravalley Deformation Potential: High-symmetry Points	183	(6)
8.2.1 L Point	183	(5)
(a) Hydrostatic and shear deformation potentials: conduction band	183	(2)
(b) Optical phonon deformation potential	185	(1)
(c) Valence-band deformation potential	186	(1)
(d) Hydrostatic and interband deformation potentials: E1 and Δ1 + Δ1 gaps	186	(2)
8.2.2 X Point	188	(1)
(a) Hydrostatic and shear deformation potentials: conduction band	188	(1)
(b) Hydrostatic and interband deformation potentials: E2 gap	189	(1)
8.3 Intervalley Deformation Potential	189	(3)
8.3.1 General Remarks	189	(3)
8.3.2 Numerical Value	192	(1)
References	192	(3)
9 Electron Affinity and Schottky Barrier Height	195	(16)
9.1 Electron Affinity	195	(3)
9.1.1 An Overview	195	(1)
9.1.2 Numerical Value	196	(2)
9.2 Schottky Barrier Height	198	(10)
9.2.1 An Ideal Schottky-Mott Contact	198	(4)
9.2.2 Case Study: Au/Semiconductor Contact	202	(2)
9.2.3 Surface Reconstruction and External Perturbation Effect	204	(2)
(a) Surface reconstruction	204	(1)
(b) Temperature effect	205	(1)
(c) Pressure effect	205	(1)
9.2.4 Breakdown Voltage	206	(2)
References	208	(3)
10 Optical Properties	211	(72)
10.1 Summary of Optical Dispersion Relations	211	(6)
10.1.1 Dielectric Permittivity	211	(2)
10.1.2 Optical Dispersion Relation	213	(1)
10.1.3 Optical Sum Rule	214	(2)
10.1.4 Optical Spectra	216	(1)
10.2 The Reststrahlen Region	217	(13)
10.2.1 Static and High-frequency Dielectric Constants	217	(5)
(a) Room-temperature value	217	(2)
(b) External perturbation effect	219	(3)
10.2.2 Reststrahlen Spectra	222	(6)
(a) Zinc-blende-type and rocksalt-type semiconductors	222	(4)
(b) Hexagonal semiconductor	226	(1)
(c) External perturbation effect	227	(1)
10.2.3 Multiphonon Optical Absorption Spectra	228	(2)
10.3 At or Near the Fundamental Absorption Edge	230	(28)
10.3.1 Free-exciton Binding Energy and Related Parameters	230	(6)
(a) Exciton states: direct exciton	230	(2)
(b) Exciton states: indirect exciton	232	(1)
(c) Exciton binding energy and related parameters	233	(3)
(d) Spin-exchange interaction constant	236	(1)
10.3.2 Refractive Index	236	(8)
(a) Theoretical dispersion model	236	(4)
(b) Long-wavelength n value: empirical formula	240	(1)
(c) External perturbation effect	241	(3)
10.3.3 Optical Absorption at the Fundamental Absorption Edge	244	(12)
(a) Critical point: definition	244	(1)
(b) Free electron-hole pair transition	245	(6)
(c) Excitonic transition	251	(2)
(d) Experimental	253	(3)
10.3.4 Urbach Tail	256	(2)
10.4 The Interband Transition Region	258	(12)
10.4.1 Model Dielectric Function	258	(5)
(a) Fundamental absorption edge	259	(1)
(b) E1 and E1 + Δ1 transitions	259	(1)
(c) E0', E2 and E1' transitions	260	(2)
(d) Plasma and d-band effects	262	(1)
10.4.2 Fundamental Optical Spectra	263	(5)
(a) Si	263	(2)
(b) GaAs	265	(1)
(c) w-CdS	265	(3)
10.4.3 External Perturbation and Doping Effects	268	(2)
(a) Temperature effect	268	(1)
(b) Pressure effect	268	(1)
(c) Doping effect	269	(1)
10.5 Free-carrier Absorption and Related Phenomena	270	(8)
10.5.1 Free-carrier Absorption	270	(4)
10.5.2 Interconduction-band and Intervalence-band Absorption	274	(4)
(a) Interconduction-band absorption	274	(1)
(b) Intervalence-band absorption	275	(3)
10.5.3 Free-carrier-induced Change in Refractive Index	278	(1)
References	278	(5)
11 Elasto-optic, Electro-optic and Nonlinear Optical Properties	283	(32)
11.1 Elasto-optic Effect	283	(8)
11.1.1 Theoretical Expression	283	(2)
11.1.2 Experimental Value	285	(6)
11.2 Linear Electro-optic Constant	291	(4)
11.2.1 Theoretical Expression	291	(3)
11.2.2 Experimental Value	294	(1)
11.3 Quadratic Electro-optic Constant	295	(5)
11.3.1 Theoretical Expression	295	(3)
11.3.2 Experimental Value	298	(2)
11.4 Franz-Keldysh Effect	300	(2)
11.4.1 Theoretical Expression	300	(1)
11.4.2 Experimental Value	301	(1)
11.5 Nonlinear Optical Constant	302	(9)
11.5.1 Second-order Nonlinear Optical Susceptibility	302	(6)
11.5.2 Third-order Nonlinear Optical Susceptibility	308	(1)
11.5.3 Two-photon Absorption	309	(2)
References	311	(4)
12 Carrier Transport Properties	315	(58)
12.1 Low-field Mobility: Electrons	315	(16)
12.1.1 Electron Scattering Mechanism	315	(5)
(a) Intervalley scattering	317	(1)
(b) Polar optical scattering	317	(1)
(c) Nonpolar optical scattering	318	(1)
(d) Piezoelectric scattering	318	(1)
(e) Deformation potential scattering	318	(1)
(f) Ionized impurity scattering	319	(1)
(g) Neutral impurity scattering	319	(1)
(h) Space-charge scattering	319	(1)
(i) Alloy scattering	320	(1)
(j) Carrier-carrier scattering	320	(1)
12.1.2 Three-valley Model	320	(1)
12.1.3 Room-temperature Value	321	(3)
12.1.4 External Perturbation and Doping Effects	324	(4)
(a) Temperature effect	324	(1)
(b) Pressure effect	325	(1)
(c) Doping effect	326	(2)
12.1.5 Hall Factor	328	(3)
12.2 Low-field Mobility: Holes	331	(8)
12.2.1 Hole Scattering Mechanism	331	(2)
12.2.2 Room-temperature Value	333	(1)
12.2.3 External Perturbation and Doping Effects	333	(6)
(a) Temperature effect	333	(4)
(b) Pressure effect	337	(1)
(c) Doping effect	337	(2)
12.3 High-field Transport: Electrons	339	(10)
12.3.1 Electron Drift Velocity-Field Characteristic	339	(8)
12.3.2 Electron Saturation Drift Velocity	347	(2)
(a) Temperature dependence	347	(1)
(b) LO phonon scattering-limited electron saturation drift velocity	348	(1)
12.4 High-field Transport: Holes	349	(4)
12.4.1 Hole Drift Velocity-Field Characteristic	349	(3)
12.4.2 Hole Saturation Drift Velocity	352	(1)
12.5 Minority-carrier Transport: Electrons in p-type Materials	353	(6)
12.5.1 Minority-electron Mobility	353	(3)
12.5.2 Minority-electron Drift Velocity	356	(1)
12.5.3 Minority-electron Lifetime and Diffusion Length	356	(3)
12.6 Minority-carrier Transport: Holes in n-type Materials	359	(3)
12.6.1 Minority-hole Mobility	359	(1)
12.6.2 Minority-hole Lifetime and Diffusion Length	360	(2)
12.7 Impact Ionization Coefficient	362	(7)
12.7.1 Theoretical Consideration	362	(3)
12.7.2 Experimental Value	365	(4)
(a) Electric-field dependence	365	(1)
(b) Temperature dependence	366	(2)
(c) Crystallographic direction dependence	368	(1)
References	369	(4)
Index	373