Semiconductor Devices: Physics and Technology, 2nd Edition

by Simon M. Sze (UMC Chair Professor, National Chiao Tung Univ., National Nano Device Laboratories, Hsinchu, Taiwan )

• ISBN13: 9780471333722
• ISBN10: 0471333727
• Edition: 2nd
• Format: Hardcover
• Copyright: 2001-09-01
• Publisher: Wiley

Summary

This book is an introduction to the physical principles of modern semiconductor devices and their advanced fabrication technology. It begins with a brief historical review of major devices and key technologies and is then divided into three sections: semiconductor material properties, physics of semiconductor devices and processing technology to fabricate these semiconductor devices.

Author Biography

<b>S. M. Sze</b> is UMC Chair Professor of the National Chiao Tung University and President of the National Nano Device Laboratories, Taiwan, R.O.C. For many years he was a member of&#160; the technical staff at Bell Laboratories. Professor Sze is the co-inventor of the nonvolatile semiconductor memory. He has written numerous texts on device physics, including <b>PHYSICS OF SEMICONDUCTOR DE</b>VICES, considered a reference classic. In 1991, he received the IEEE J. J. Ebers award for his "fundamental and pioneering contributions..." He received his PhD in solid-state electronic from Stanford University in 1963.

Table of Contents

Preface.

Introduction.

PART I: SEMICONDUCTOR PHYSICS.

Energy Bands and Carrier Concentration in Thermal Equilibrium.

Carrier Transport Phenomena.

PART II: SEMICONDUCTOR DEVICES.

p-n Junction.

Bipolar Transistor and Related Devices.

MOSFET and Related Devices.

MESFET and Related Devices.

Microwave Diodes, Quantum-Effect, and Hot-Electron Devices.

Photonic Devices.

PART III: SEMICONDUCTOR TECHNOLOGY.

Crystal Growth and Epitaxy.

Film Formation.

Lithography and Etching.

Impurity Doping.

Integrated Devices.

Appendix A: List of Symbols.

Appendix B: International Systems of Units (SI Units).

Appendix C: Unit Prefixes.

Appendix D: Greek Alphabet.

Appendix E: Physical Constants.

Appendix F: Properties of Important Element and Binary Compound Semiconductors at 300 K.

Appendix G: Properties of Si and GaAs at 300 K.

Appendix H: Derivation of the Density of States in Semiconductor.

Appendix I: Derivation of Recombination Rate for Indirect Recombination.

Appendix J: Calculation of the Transmission Coefficient for a Symmetric Resonant-Tunneling Diode.

Appendix K: Basic Kinetic Theory of Gases.

Appendix L: Answers to Selected Problems.

Index.