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| Preface | |
| Acknowledgments | |
| Materials Research Society Symposium Proceedings | |
| The Use of RHEED intensities for the Quantitative Characterization of Surfaces | p. 3 |
| Reentrant Growth in Kientic Thin-Film Deposition on Stepped Surfaces | p. 11 |
| Analysis of Reflection High Energy Electron Diffraction Pattern of Silicon Carbide Grown on Silicon | p. 17 |
| Low-Temperature Growth and Structural Characterization of GaAs Using Ionized Source Beam Epitaxy | p. 23 |
| X-ray Scattering and Absorption Studies of MnAs Thin Films Grown by MBE on GaAs(001) Substrates | p. 29 |
| Crossover from Dimer Nucleation to Adatom Exchange during Submonolayer Epitaxy | p. 37 |
| Molecular Beam Epitaxial Growth Mode Transitions on Vicinal Surfaces | p. 47 |
| Solid-on-Solid Monte Carlo Investigation of Islanding Kinetics During Heteroepitaxy | p. 53 |
| Scaling of Island Size Distributions in the Growth of Ni on GaAs(110) | p. 59 |
| Effects of Crystalline Microstructure on Epitaxial Morphology | p. 67 |
| A New Method for Fast Simulation of Adsorbate Dynamics | p. 77 |
| A One-Dimensional Stochastic Model of Diamond Growth | p. 83 |
| Kinetic Roughening of Fe/Fe(100) Epitaxial Thin Films | p. 89 |
| Characterization of Surface Morphology in Epitaxial Growth | p. 95 |
| Morphology of Ag Islands Grown on GaAs(110) at Low Coverage: Monte Carlo Simulations | p. 103 |
| Analysis of TPD Spectra on Semiconductor Surfaces by Monte Carlo Simulations | p. 109 |
| Heteroepitaxial [actual symbol not reproducible] Layer Growth on (100)Si by Atmospheric Pressure Chemical Vapor Deposition | p. 117 |
| Progression of the Surface Roughness of N+ Silicon Epitaxial Films as Analyzed by AFM | p. 123 |
| In Situ Cross-Sectional Scanning Tunneling Microscopy Sample Preparation Technique | p. 129 |
| Growth of Transition Metal Films on Al(110) Surfaces | p. 135 |
| Molecular Dynamics Simulation of Energetic Deposition of Ag/Fe and Ag/Si Bilayers and Multilayers | p. 141 |
| Molecular Beam Epitaxy of InGaP Films Grown on Si(001) Substrates with Various Kinds of Initial Buffer Layers | p. 147 |
| Morphological Evolution and Properties of LPE Grown GaSb, AlGaSb, and AlGaAsSb | p. 153 |
| Microstructural Evolution of Co[subscript 2]GaAs Thin Film on GaAs Substrate | p. 159 |
| Molecular Beam Epitaxial Growth of InAs/AlGaAsSb Deep Quantum Wells on GaAs Substrates | p. 165 |
| Structural Decomposition at Sn/GaAs(001) Interface | p. 171 |
| The Effect of Substrate Misorientation on the Evolution of Surface Morphology in Epitaxially Grown CaF[subscript 2]/Si(111) Heterostructures | p. 177 |
| High Quality Heteroepitaxial [beta]-SiC Deposited from Methyltrichlorosilane at 1200[degree centigrade] Without any Buffer Layer | p. 183 |
| Semiconductor Epitaxial and Nonepitaxial Overgrowth from Solutions | p. 189 |
| Surfactant-Mediated Growth of SiGe/Si Quantum-Well Structures Studied by Photoluminescence Technique and Secondary Ion Mass Spectrometry | p. 197 |
| GaAs-on-Ge Heteroepitaxy by Atomic Hydrogen-Assisted Molecular Beam Epitaxy (H-MBE) | p. 203 |
| Interdiffusion During the Growth of Fe on Ag/Fe(110) | p. 207 |
| The Effect of Strain on Intra- and Interlayer Mass Transport in Metal Epitaxy | p. 213 |
| Coarsening and Slope Selection During Crystal Growth and Etching of Ge(001) | p. 221 |
| Step-Edge Barriers on GaAs(001) | p. 229 |
| Morphological Transition of Epitaxial Rhodium (111) | p. 243 |
| Pyramid Formation and Coarsening During Homoepitaxial Growth | p. 251 |
| Interfacial Coarsening in an MBE Growth Without Slope Selection | p. 257 |
| On the Roughening of Ceramic Surfaces | p. 263 |
| Self-Limiting Growth Kinetics of 3D Coherent Islands | p. 271 |
| Equilibrium Shapes of Small Strained Islands | p. 283 |
| Uniform Quantum Dots by Self-Organizing Process in Atomic Hydrogen-Assisted MBE | p. 289 |
| Temperature-Dependent Strain Relaxation and Islanding of Ge/Si(111) | p. 295 |
| Heteroepitaxial Layer Morphology and Misfit Defect Formation | p. 303 |
| Misfit Dislocations and Elastic Relaxation | p. 313 |
| Strain Relaxation at Low Misfits: Dislocation Injection vs. Surface Roughening | p. 325 |
| Correlation Between Extended Defects and Surface Morphology in MBE Grown InAs/GaAs Heterostructures | p. 337 |
| Orientation Dependence of CdTe/Si Grown by MBE | p. 343 |
| The Stability of Lattice Mismatched Thin Films | p. 351 |
| Observations on the Mechanics of Strained Epitaxial Island Growth | p. 359 |
| Void and Dislocation Microstructure Development in Heteroepitaxial Film Growth | p. 371 |
| Deformation Behavior of Strained Layer Heterostructures | p. 377 |
| Equilibrium Configuration of Epitaxially Strained Thin Film Surfaces | p. 383 |
| A Model for Ion-Assisted Molecular Beam Epitaxy and Application to Synthesis of Epitaxial Sn[subscript x]Ge[subscript 1-x] Alloy Films | p. 389 |
| Dislocation Structure Evolution in Thin Single Crystal Plates Under Cyclic Loading | p. 397 |
| Investigation of Relationships between Dislocations and Crystal Surface Ledges | p. 401 |
| Strain Relaxation in Heteroepitaxial Si[subscript 1-x]Ge[subscript x] Films Via Surface Roughening Processes | p. 407 |
| Si[subscript 1-x]Ge[subscript x] Critical Thickness for Surface Wave Generation During UHV-CVD Growth at 525[degree centigrade] | p. 413 |
| Morphological Evolution During Ge/Si(100) Heteroepitaxy | p. 419 |
| Synchrotron White Beam Topography Studies of Residual Stress in SiC Single Crystal Wafers With Epitaxial Thin Films | p. 425 |
| Defect Structures in GaP/Si | p. 431 |
| Strain Relaxation in GaAs on Si by Two Groups of Misfit Dislocations | p. 437 |
| Formation of Interfacial Dislocations in Heteroepitaxial Layers Grown in Two-Dimensional Mode | p. 443 |
| Anisotropic Lattice Relaxation and its Mechanism of ZnSe Epilayer Grown on (001) GaAs Substrate by Molecular Beam Epitaxy | p. 449 |
| Reciprocal Space Analysis of the Initial Stages of Strain Relaxation in SiGe Epilayers | p. 455 |
| X-ray Diffraction Analysis of the Strain of SiGeC/(100)Si Alloys | p. 461 |
| Defect Structure of Cu-Rich and In-Rich Chalcopyrite CuInSe[subscript 2] Films Grown on GaAs | p. 467 |
| Effect of the Introduction of a MBE Buffer Layer on the Morphology of InSb ALMBE Layers Grown on InP Substrates | p. 473 |
| Twinning in Epilayers of CdTe on [211] Si: Influence of ZnTe Buffer Layer and Substrate Misorientation | p. 479 |
| TEM Study of Stacking Faults Formed in Pairs in a ZnSe Epitaxial Layer on a GaAs(001) Buffer Layer | p. 485 |
| Control of Defect Structures in CuGaSe[subscript 2] Epitaxial Films | p. 491 |
| First-Principles Study of Domain Evolution of Ir on Ir(111) | p. 499 |
| Atomistic Simulation and Elastic Theory of Surface Steps | p. 505 |
| Simulations of Si(100) Growth: Step Flow and Low Temperature Growth | p. 511 |
| Growth Kinetics and Structure of Ultrathin Copper Films on the W(110) Surface Studied by LEEM | p. 523 |
| Spectral Sensitivities of X-ray Diffraction to the Roughness of Si/SiO[subscript 2] Interfaces | p. 531 |
| Growth of GaAs and InAlAs on High Quality, Epitaxial, NiAl Metal Film | p. 537 |
| Double Periodicity Formation in EuTe/PbTe Superlattices | p. 543 |
| Strain-Induced Diffusion in Heteroepitaxially Grown CuInSe[subscript 2] on GaAs Substrates | p. 549 |
| Author Index | p. 555 |
| Subject Index | p. 559 |
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