Silicon Carbide and Related Materials, 2008: Selected, Peer Reviewed Papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7 - 11, Barcelona, Spain

Wide-bandgap semiconductors, such as silicon carbide and group-III nitrides, are attracting increased attention as promising materials for high-power, high-frequency and high-temperature electronics use, as well as for short-wavelength light-emitters. The volume is arranged into seven chapters which cover the topics of SiC and related materials, bulk and epi-growth, characterization of SiC and related materials, devices and applications. Novel subject areas that enjoy a strong increase in contributions include cutting-edge SiC nanostructures, and graphene. From the scientific point of view, it is seen that bipolar degradation can be significantly reduced by appropriate materials preparation. Cubic Silicon Carbide is once again attracting attention from both researchers and industry. It has also been shown that the reliability of MOS structures on SiC is improving. Moreover, there has been a step-change increase in the application of SiC technologies to renewable energy systems and space domains. A close examination of this volume will equip the reader with a clear state-of-the-art overview of the field. This comprehensive work offers a superlative overview for those already working in these fields, as well as offering a sound introduction to newcomers.