Advances in silicon carbide materials, processing and device design have recently resulted in implementation of SiC-based electronic systems and offer great promise in high-voltage, high-temperature and high-frequency applications. This volume focuses on new developments in basic science of SiC materials as well as rapidly maturing device technologies. The challenges in this field include understanding and decreasing defect densities in bulk SiC crystals, controlling morphology and residual impurities in epilayers, optimization of implant activation and oxide-SiC interfaces, and developing novel device structures. This book brings together the crystal growers, physicists and device experts needed to continue the rapid pace of silicon-carbide-based technology. Topics include: epitaxial growth; characterization/defects; MOS technology; SiC processing and devices.

Preface
Materials Research Society Symposium Proceedings
Epitaxial Growth and Characterization of 4H-SiC(11-20) and (03-38)	p. 3
Channel Epitaxy of 3C-SiC on Si Substrates by CVD	p. 15
Modeling Analysis of Free-Spreading Sublimation Growth of SiC Crystals	p. 23
Epitaxial Silicon Carbide Simulations vs. Experiments: Etching, Growth Rates and Aluminum/Nitrogen Doping	p. 29
Reconstruction and Epitaxial Adlayers on SiC Surfaces: Structural Significance for Technological Applications	p. 35
3C-SiC Monocrystals Grown on Undulant Si(001) Substrates	p. 47
Growth of Columnar SiC on Patterned Si Substrates by CVD	p. 59
Ion Dose Dependence on Solid Phase Epitaxy of Amorphous Silicon Carbide Induced by Ion Implantation	p. 67
Radial Distribution Functions of Amorphous Silicon Carbide	p. 73
Memory Switching in Ion Bombarded Amorphous Silicon Carbide Thin Film Devices	p. 79
Thermal Chemical Vapor Deposition of Silicon Carbide Films as Protective Coatings for Microfluidic Structures	p. 85
SiC to SiC Wafer Bonding	p. 91
Field Enhancement Mechanisms and Electron Field Emission Properties of Ion Beam Synthesized and Modified SiC/Si Heterostructures	p. 97
Spatially Resolved Photoluminescence and Thermally Stimulated Luminescence in Semi-Insulating SiC Wafers	p. 103
Characterization of Porous SiC Substrates and of the Epilayer Structures Grown on Them	p. 109
<0001> Channeling Stopping Power of MeV He[superscript +] Ions in 4H- and 6H-SiC	p. 115
Spectroscopic Properties of Cubic SiC on Si	p. 121
Whole-Wafer Optical Mapping of Defects in Insulating Silicon Carbide Wafers	p. 127
Thermal Stress as the Major Factor of Defect Generation in SiC During PVT Growth	p. 131
Thermal Plasma Physical Vapor Deposition of Nanostructured SiC Coatings	p. 137
Self-Assembled Ge Quantum Dots on SiC Substrates Grown by UHV-CVD	p. 143
Four Current Examples of Characterization of Silicon Carbide	p. 151
Hall Scattering Factor of Holes and Shallow Defect Centers in Aluminum-Doped SiC	p. 163
Ion Implantation Induced Deep Defects in n-Type 4H-Silicon Carbide	p. 175
Effects of Structural Defects on Diode Properties in 4H-SiC	p. 181
Process Induced Extended Defects in SiC Grown via Sublimation	p. 187
Extended Defects in 4H-SiC PiN Diodes	p. 199
Accurate Lattice Constant and Mismatch Measurements of SiC Heterostructures by X-ray Multiple-Order Reflections	p. 205
Experimental Studies and Thermodynamic Modeling of the Interaction of O[subscript 2] With SiC	p. 213
SiO[subscript 2]/SiC Interface Properties on Various Surface Orientations	p. 219
Afterglow Thermal Oxidation of Silicon Carbide	p. 227
A Semi-Empirical Model for Electron Mobility at the SiC/SiO[subscript 2] Interface	p. 233
Confinement of Screw Dislocations to Predetermined Lateral Positions in (0001) 4H-SiC Epilayers Using Homoepitaxial Web Growth	p. 241
Modeling the Crystal Growth of Cubic Silicon Carbide by Molecular Dynamics Simulations	p. 247
Characterization of a Ceramic-Metal-Ceramic Bond: Chemical Vapor Deposited (CVD) Silicon Carbide Joined by a Silver-Based Active Brazing Alloy (ABA)	p. 253
Homoepitaxial 4H-SiC Films Grown by Microwave Plasma Chemical Vapor Deposition	p. 259
Transport Mechanisms in Focused Ion Beam Assisted Ohmic Contacts to p-Type 6H-SiC	p. 265
Photo-Chemical Pattern Etching of Silicon-Carbide by Using Excimer Laser and Hydrogen Peroxide Solution	p. 271
The Effect of Annealing on High-Resistivity and Semi-Insulating 4H-SiC	p. 277
The Effect of Channel Recess and Passivation on 4H-SiC MESFETs	p. 283
Aluminum and Boron Diffusion in 4H-SiC	p. 291
Contact Resistivity of Al/Ti Ohmic Contacts on p-Type Ion Implanted 4H- and 6H-SiC	p. 303
Porous SiC - Prospective Applications	p. 309
Strained SiC:Ge Layers in 4H SiC Formed by Ge Implantation	p. 321
System Design Considerations for Optimizing the Benefit by Unipolar SiC Power Devices	p. 329
SiC BJT's for High Power Switching and RF Applications	p. 341
Electrical Instability Suppression in 4H-SiC Power MESFETs	p. 347
Influence of Interface States on High Temperature SiC Sensors and Electronics	p. 363
Towards Ferroelectric Field Effect Transistors in 4H-Silicon Carbide	p. 371
7 kV 4H-SiC GTO Thyristors	p. 381
Fabrication and Measurement of 4H-Silicon Carbide Avalanche Photodiodes	p. 387
A New Process for the Fabrication of SiC Power Devices and Systems on SiCOI (Silicon Carbide On Insulator) Substrates	p. 393
Author Index	p. 399
Subject Index	p. 403
Table of Contents provided by Blackwell. All Rights Reserved.

What is included with this book?

The New copy of this book will include any supplemental materials advertised. Please check the title of the book to determine if it should include any access cards, study guides, lab manuals, CDs, etc.

The Used, Rental and eBook copies of this book are not guaranteed to include any supplemental materials. Typically, only the book itself is included. This is true even if the title states it includes any access cards, study guides, lab manuals, CDs, etc.

Amazon no longer offers textbook rentals. We do!

Amazon no longer offers textbook rentals. We do!

We're the #1 textbook rental company. Let us show you why.

Silicon Carbide 2002

9781558996793

1558996796

Supplemental Materials

Summary

Table of Contents

Supplemental Materials

Rewards Program