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Preface | |
Materials Research Society Symposium Proceedings | |
Epitaxial Growth and Characterization of 4H-SiC(11-20) and (03-38) | p. 3 |
Channel Epitaxy of 3C-SiC on Si Substrates by CVD | p. 15 |
Modeling Analysis of Free-Spreading Sublimation Growth of SiC Crystals | p. 23 |
Epitaxial Silicon Carbide Simulations vs. Experiments: Etching, Growth Rates and Aluminum/Nitrogen Doping | p. 29 |
Reconstruction and Epitaxial Adlayers on SiC Surfaces: Structural Significance for Technological Applications | p. 35 |
3C-SiC Monocrystals Grown on Undulant Si(001) Substrates | p. 47 |
Growth of Columnar SiC on Patterned Si Substrates by CVD | p. 59 |
Ion Dose Dependence on Solid Phase Epitaxy of Amorphous Silicon Carbide Induced by Ion Implantation | p. 67 |
Radial Distribution Functions of Amorphous Silicon Carbide | p. 73 |
Memory Switching in Ion Bombarded Amorphous Silicon Carbide Thin Film Devices | p. 79 |
Thermal Chemical Vapor Deposition of Silicon Carbide Films as Protective Coatings for Microfluidic Structures | p. 85 |
SiC to SiC Wafer Bonding | p. 91 |
Field Enhancement Mechanisms and Electron Field Emission Properties of Ion Beam Synthesized and Modified SiC/Si Heterostructures | p. 97 |
Spatially Resolved Photoluminescence and Thermally Stimulated Luminescence in Semi-Insulating SiC Wafers | p. 103 |
Characterization of Porous SiC Substrates and of the Epilayer Structures Grown on Them | p. 109 |
<0001> Channeling Stopping Power of MeV He[superscript +] Ions in 4H- and 6H-SiC | p. 115 |
Spectroscopic Properties of Cubic SiC on Si | p. 121 |
Whole-Wafer Optical Mapping of Defects in Insulating Silicon Carbide Wafers | p. 127 |
Thermal Stress as the Major Factor of Defect Generation in SiC During PVT Growth | p. 131 |
Thermal Plasma Physical Vapor Deposition of Nanostructured SiC Coatings | p. 137 |
Self-Assembled Ge Quantum Dots on SiC Substrates Grown by UHV-CVD | p. 143 |
Four Current Examples of Characterization of Silicon Carbide | p. 151 |
Hall Scattering Factor of Holes and Shallow Defect Centers in Aluminum-Doped SiC | p. 163 |
Ion Implantation Induced Deep Defects in n-Type 4H-Silicon Carbide | p. 175 |
Effects of Structural Defects on Diode Properties in 4H-SiC | p. 181 |
Process Induced Extended Defects in SiC Grown via Sublimation | p. 187 |
Extended Defects in 4H-SiC PiN Diodes | p. 199 |
Accurate Lattice Constant and Mismatch Measurements of SiC Heterostructures by X-ray Multiple-Order Reflections | p. 205 |
Experimental Studies and Thermodynamic Modeling of the Interaction of O[subscript 2] With SiC | p. 213 |
SiO[subscript 2]/SiC Interface Properties on Various Surface Orientations | p. 219 |
Afterglow Thermal Oxidation of Silicon Carbide | p. 227 |
A Semi-Empirical Model for Electron Mobility at the SiC/SiO[subscript 2] Interface | p. 233 |
Confinement of Screw Dislocations to Predetermined Lateral Positions in (0001) 4H-SiC Epilayers Using Homoepitaxial Web Growth | p. 241 |
Modeling the Crystal Growth of Cubic Silicon Carbide by Molecular Dynamics Simulations | p. 247 |
Characterization of a Ceramic-Metal-Ceramic Bond: Chemical Vapor Deposited (CVD) Silicon Carbide Joined by a Silver-Based Active Brazing Alloy (ABA) | p. 253 |
Homoepitaxial 4H-SiC Films Grown by Microwave Plasma Chemical Vapor Deposition | p. 259 |
Transport Mechanisms in Focused Ion Beam Assisted Ohmic Contacts to p-Type 6H-SiC | p. 265 |
Photo-Chemical Pattern Etching of Silicon-Carbide by Using Excimer Laser and Hydrogen Peroxide Solution | p. 271 |
The Effect of Annealing on High-Resistivity and Semi-Insulating 4H-SiC | p. 277 |
The Effect of Channel Recess and Passivation on 4H-SiC MESFETs | p. 283 |
Aluminum and Boron Diffusion in 4H-SiC | p. 291 |
Contact Resistivity of Al/Ti Ohmic Contacts on p-Type Ion Implanted 4H- and 6H-SiC | p. 303 |
Porous SiC - Prospective Applications | p. 309 |
Strained SiC:Ge Layers in 4H SiC Formed by Ge Implantation | p. 321 |
System Design Considerations for Optimizing the Benefit by Unipolar SiC Power Devices | p. 329 |
SiC BJT's for High Power Switching and RF Applications | p. 341 |
Electrical Instability Suppression in 4H-SiC Power MESFETs | p. 347 |
Influence of Interface States on High Temperature SiC Sensors and Electronics | p. 363 |
Towards Ferroelectric Field Effect Transistors in 4H-Silicon Carbide | p. 371 |
7 kV 4H-SiC GTO Thyristors | p. 381 |
Fabrication and Measurement of 4H-Silicon Carbide Avalanche Photodiodes | p. 387 |
A New Process for the Fabrication of SiC Power Devices and Systems on SiCOI (Silicon Carbide On Insulator) Substrates | p. 393 |
Author Index | p. 399 |
Subject Index | p. 403 |
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