Advanced High Speed Devices

by Shur, Michael S.; Maki, Paul

• ISBN13: 9789814287869
• ISBN10: 9814287865
• Format: Hardcover
• Copyright: 2009-12-10
• Publisher: World Scientific Pub Co Inc

Summary

Advanced High Speed Devices covers five areas of advanced device technology: terahertz and high speed electronics, ultraviolet emitters and detectors, advanced III-V field effect transistors, III-N materials and devices, and SiC devices. These emerging areas have attracted a lot of attention and The up-to-date results presented in the book will be of interest to most device and electronics engineers and scientists. The contributors range from prominent academics, such as Professor Lester Eastman, To key US Government scientists, such as Dr Michael Wraback.

Table of Contents

Preface	p. v
Simulation and Experimental Results on GaN Based Ultra-Short Planar Negative Differential Conductivity Diodes for THz Power Generation	p. 1
5-Terminal THz GaN Based Transistor with Field- and Space-Charge Control Electrodes	p. 7
Performance Comparison of Scaled III-V and Si Ballistic Nanowire MOSFETs	p. 15
A Room Temperature Ballistic Deflection Transistor for High Performance Applications	p. 23
Emission and Intensity Modulation of Terahertz Electromagnetic Radiation Utilizing 2-Dimensional Plasmons in Dual-Grating-Gate HEMT's	p. 33
Millimeter Wave to Terahertz in CMOS	p. 55
The Effects of Increasing AIN Mole Fraction on the Performance of AlGaN Active Regions Containing Nanometer Scale Compositionally Inhomogeneities	p. 69
Surface Acoustic Wave Propagation in GaN-On-Sapphire Under Pulsed Sub-Band Ultraviolet Illumination	p. 77
Solar-Blind Single-Photon 4H-SiC Avalanche Photodiodes	p. 85
Monte Carlo Simulations of In0.75Ga0.25As MOSFETs at 0.5 V Supply Voltage for High-Performance CMOS	p. 93
The First 70nm 6-Inch GaAs PHEMT MMIC Process	p. 101
High-Performance 50-nm Metamorphic High Electron-Mobility Transistors with High Breakdown Voltages	p. 107
MBE Growth and Characterization of Mg-Doped III-Nitrides on Sapphire	p. 113
Performance of MOSFETs on Reactive-Ion-Etched GaN Surfaces	p. 121
High Current Density/High Voltage AlGaN/GaN HFETs on Sapphire	p. 129
InAlN/GaN MOS-HEMT with Thermally Grown Oxide	p. 137
GaN Transistors for Power Switching and Millimeter-Wave Applications	p. 145
4-nm AIN Barrier All Binary HFET with SiNx Gate Dielectric	p. 153
Effect of Gate Oxide Processes on 4H-SiC MOSFETs on (000-1) Oriented Substrate	p. 161
Characterization and Modeling of Integrated Diode in 1.2kV 4H-SiC Vertical Power MOSFET	p. 167
Packaging and Wide-Pulse Switching of 4 mm x 4 mm Silicon Carbide GTOs	p. 173
Bi-Directional Scalable Solid-State Circuit Breakers for Hybrid-Electric Vehicles	p. 183
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