Advanced Semiconductor Devices: Proceedings of the 2006 Lester Eastman Conference

by Shur, Michael S.; Maki, Paul A.; Kolodzey, James

• ISBN13: 9789812708588
• ISBN10: 9812708588
• Format: Hardcover
• Copyright: 2007-06-27
• Publisher: World Scientific Pub Co Inc

Summary

The Proceedings cover five emerging areas of advanced device technology: wide band gap devices, terahertz and millimeter waves, nanometer silicon and silicongermanium devices, nanoelectronics and ballistic devices, and characterization of advanced photonic and electronic devices. The papers by leading researchers in high speed and advanced electronic and photonic technology presented many "first" and break-through results, as has become a tradition with the Lester Eastman Conference and will allow readers to get up-to-date information about emerging trends and future directions of these technologies. Key papers in each section present snap-shot and mini reviews of the state-of-the art and of "hot off the press" results making the book to be required reading for engineers, scientists, and students working on advanced and high speed device technology. Book jacket.

Table of Contents

Preface	p. v
Wide Band Gap Devices
Wide-Bandgap Semiconductor Devices for Automotive Applications	p. 3
A GaN on SiC HFET Device Technology for Wireless Infrastructure Applications	p. 11
Drift Velocity Limitation in GaN HEMT Channels	p. 15
Simulations of Field-Plated and Recessed Gate Gallium Nitride-Based Heterojunction Field-Effect Transistors	p. 19
Low Temperature Electroluminescence of Green and Deep Green GaInN/GaN Light Emitting Diodes	p. 25
Spatial Spectral Analysis in High Brightness GaInN/GaN Light Emitting Diodes	p. 29
Self-Induced Surface Texturing of Al[subscript 2]O[subscript 3] by Means of Inductively Coupled Plasma Reactive Ion Etching in Cl[subscript 2] Chemistry	p. 35
Field and Thermionic Field Transport in Aluminium Gallium Arsenide Heterojunction Barriers	p. 39
Electrical Characteristics and Carrier Lifetime Measurements in High Voltage 4H-SiC PiN Diodes	p. 43
Geometry and Short Channel Effects on Enhancement-Mode n-Channel GaN MOSFETs on p and n[superscript -] GaN/Sapphire Substrates	p. 49
4H-SiC Vertical RESURF Schottky Rectifiers and MOSFETs	p. 55
Present Status and Future Directions of SiGe HBT Technology	p. 61
Optical Properties of GaInN/GaN Multi-Quantum Well Structure and Light Emitting Diode Grown by Metalorganic Chemical Vapor Phase Epitaxy	p. 81
Electrical Comparison of Ta/Ti/Al/Mo/Au and Ti/Al/Mo/Au Ohmic Contacts on Undoped GaN HEMTs Structure with AlN Interlayer	p. 85
Above 2 A/mm Drain Current Density of GaN HEMTs Grown on Sapphire	p. 91
Focused Thermal Beam Direct Patterning on InGaN during Molecular Beam Epitaxy	p. 97
Terahertz and Millimeter Wave Devices
Temperature-Dependent Microwave Performance of Sb-Heterostructure Backward Diodes for Millimeter-Wave Detection	p. 105
A Mixed-Signal Row/Column Architecture for Very Large Monolithic mm-Wave Phased Arrays	p. 111
Terahertz Emission from Electrically Pumped Silicon Germanium Intersubband Devices	p. 115
Terahertz Sensing of Materials	p. 121
Silicon and SiGe Devices
Negative Bias Temperature Instability in TiN/HF-Silicate Based Gate Stacks	p. 129
Power Adaptive Control of Dense Configured Super-Self-Aligned Back-Gate Planar Transistors	p. 143
Non-Volatile High Speed & Low Power Charge Trapping Devices	p. 147
High Performance SiGeC/Si Near-IR Electrooptic Modulators and Photodetectors	p. 153
Nanoelectronics and Ballistic Devices
Hybrid Nanomaterials for Multi-Spectral Infrared Photodetection	p. 165
Ballistic Electron Acceleration Negative-Differential-Conductivity Devices	p. 173
Photoluminescence and Photocapacitance
Understanding Ultraviolet Emitter Performance Using Intensity Dependent Time-Resolved Photoluminescence	p. 179
Photocapacitance of Selectively Doped AlGaAs/GaAs Heterostructures Containing Deep Traps	p. 189
Author Index
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