Advanced Semiconductor and Organic Nano-Techniques Pt. II : Tunable Band-Gaps and Nano-Tubes

by Morkoc, Hadis

• ISBN13: 9780125070621
• ISBN10: 0125070624
• Format: Hardcover
• Copyright: 2003-06-26
• Publisher: Academic Pr

Table of Contents

PREFACE	ix
LIST OF CONTRIBUTORS	xv
Chapter 1 Engineering the Electronic Structure and the Optical Properties of Semiconductor Quantum Dots	1	(50)
M. De Giorgi, R. Rinaldi, T. Johal, G. Pagliara, A. Passaseo, M. De Vittorio, M. Lomascolo, R. Cingolani, A. Vasanelli, R. Ferreira, and G. Bastard
I. FABRICATION AND STRUCTURAL ANALYSIS OF InGaAs/GaAs QUANTUM DOTS	2	(5)
II. CORRELATION BETWEEN STRAIN FIELD AND TEM CONTRAST	7	(6)
III. CHEMICAL ANALYSIS	13	(2)
IV. MODELLING OF THE WAVEFUNCTIONS	15	(15)
V. PHOTOLUMINESCENCE EXPERIMENTS	30	(5)
VI. SINGLE DOT SPECTROSCOPY	35	(11)
1. Wavefunction Spectroscopy	35	(6)
2. Optical Spectroscopy	41	(5)
VII. CONCLUSIONS	46	(1)
REFERENCES	47	(4)
Chapter 2 GaN-Based Modulation Doped FETs and Heterojunction Bipolar Transistors	51	(96)
H. Morkop
I. INTRODUCTION	51	(3)
II. CRYSTAL STRUCTURE OF NITRIDES	54	(10)
1. Gallium Nitride	55	(2)
2. Aluminum Nitride	57	(3)
3. Indium Nitride	60	(2)
4. Dilute GaAs(N)	62	(2)
III. ELECTRON TRANSPORT PROPERTIES IN GaN AND GaN/AlGaN HETEROSTRUCTURES	64	(3)
IV. BULK MOBILITY IN GaN	67	(5)
V. POLARIZATION EFFECTS, MOBILITY, AND ELECTRON CONCENTRATION IN 2DEG SYSTEMS	72	(13)
VI. PARTIAL STRAIN RELAXATION	85	(4)
VII. LOW-FIELD TRANSPORT IN 2DEG SYSTEMS	89	(5)
VIII. HIGH-FIELD TRANSPORT	94	(2)
IX. MODULATION DOPED FIELD-EFFECT TRANSISTORS	96	(19)
1. MODFET Model	96	(7)
2. Drain Current Model in MODFETs	103	(3)
3. I-V Characteristics	106	(1)
4. Experimental Considerations	106	(4)
5. Schottky Barriers for Gates	110	(3)
6. Contacts to GaN	113	(2)
X. A1GaN/GaN MODFETS	115	(17)
1. Experimental Performance of GaN MODFETs	115	(8)
2. Power Amplifiers	123	(4)
3. Anomalies in GaN/A1GaN MODFETs	127	(5)
XI. HETEROIUNCTION BIPOLAR TRANSISTORS	132	(4)
XII. CONCLUSIONS	136	(1)
REFERENCES	137	(10)
Chapter 3 Ultraviolet Photodetectors based on GaN and A1GaN	147	(44)
H. Temkin
I. INTRODUCTION	147	(2)
II. SOME DEFINITIONS	149	(1)
III. NOISE IN PHOTODETECTORS	150	(4)
IV. SPECTRAL RESPONSE OF GaN AND A1GaN DETECTORS	154	(3)
V. GaN-BASED SCHOTTKY BARRIER DETECTORS	157	(8)
VI. GaN HOMOJUNCTION DETECTORS	165	(10)
1. Current-Voltage Characteristics	166	(5)
2. Noise Measurements Under Reverse Bias	171	(2)
3. Noise Measurements Under Forward Bias	173	(1)
4. Noise Measurements Under Illumination	174	(1)
VII. AlGaN-GaN HETEROJUNCTIONS	175	(3)
VIII. HETEROJUNCTIONS OF AlGaN	178	(4)
IX. AVALANCHE PHOTODIODES	182	(3)
X. CONCLUSIONS	185	(1)
REFERENCES	186	(5)
Chapter 4 Organic Field-Effect Transistors for Large-Area Electronics	191	(50)
C.D. Dimitrakopoulos
I. INTRODUCTION	191	(2)
II. ORIGIN OF SEMICONDUCTIVITY IN ORGANICS	193	(1)
III. COMMON SEMICONDUCTING ORGANIC MATERIALS	194	(1)
IV. TRANSPORT MECHANISMS IN ORGANIC SEMICONDUCTORS	195	(7)
V. ORGANIC TRANSISTOR OPERATION AND MODELING	202	(4)
VI. ORGANIC TRANSISTOR FABRICATION METHODS	206	(2)
1. Vacuum Deposited Organic Semiconductor Films	206	(1)
2. Solution Processed Organic Semiconductor Films	207	(1)
VII. ORGANIC TRANSISTOR PERFORMANCE	208	(14)
1. Progress in Performance of p-type OTFTs	208	(5)
2. Progress in Performance wrx-type OTFTs	213	(9)
VIII. RELATION BETWEEN MORPHOLOGY AND ELECTRICAL PROPERTIES	222	(3)
IX. DEPENDENCE OF MOBILITY ON GATE VOLTAGE	225	(7)
X. CONCLUSIONS AND OUTLOOK	232	(1)
REFERENCES	233	(8)
Chapter 5 Organic Optoelectronics: The Case of Oligothiophenes	241	(52)
G. Gigli, G. Barbarella, M. Anni, and B. Cingolani
I. INTRODUCTION	241	(2)
II. THIOPHENE OLIGOMERS	243	(11)
1. Structural Characteristics	243	(3)
2. Electronic Structure and Optical Properties	246	(8)
III. BASIC STUDIES	254	(33)
1. Alkyl-Substituted Oligothiophenes	254	(14)
2. Oligothiophene-S,S-Dioxides	268	(8)
3. Device Applications	276	(11)
IV. CONCLUSIONS	287	(1)
REFERENCES	287	(6)
Chapter 6 Single-Walled Carbon Nanotubes for Nanoelectronics	293	(52)
M.S. Fuhrer
I. INTRODUCTION	293	(2)
II. ELECTRONIC PROPERTIES OF CARBON NANOTUBES	295	(4)
1. Band Structure of Carbon Nanotuhes	296	(2)
2. Peierls Distortion	298	(1)
3. Summary of Electronic Structure	299	(1)
III. NANOTUBE SYNTHESIS AND DEVICE FABRICATION	299	(3)
1. Synthesis of Single- Walled Carbon Nanotubes	299	(2)
2. Fabrication of Electronic Devices	301	(1)
IV. ELECTRONIC TRANSPORT PROPERTIES	302	(14)
1. Conductance Quantization in On Dimension	302	(2)
2. Metallic Single- Walled Nanotubes	304	(8)
3. Semiconducting Single- Walled Nanotubes	312	(3)
4. Summary of Electronic Transport Properties	315	(1)
V. NANOTUBE NANOELECTRONIC DEVICES	316	(14)
1. Field-Effect Transistors	317	(4)
2. Single-Electron Transistors	321	(2)
3. Nanotube Heterojunction Devices	323	(5)
4. Mechanical Devices	328	(1)
5. Nanotube Interconnects	329	(1)
VI. OUTLOOK FOR NANOTUBES IN NANOELECTRONICS	330	(3)
1. Uniformity of Properties	331	(2)
2. Self assembly	333	(1)
VII. BEYOND CARBON NANOTUBES	333	(3)
1. Inorganic Nanotubes	333	(2)
2. Semiconductor Nanowires	335	(1)
VIII. CONCLUSIONS	336	(1)
REFERENCES	337	(8)
Chapter 7 Short Wavelength III-Nitride Lasers	345	(62)
A.V. Nurmikko
I. INTRODUCTION	345	(12)
1. Historical Overview	345	(2)
2. Material and Physical Properties of Wide Bandgap Semiconductors	347	(3)
3. Some Physical Parameters: A Comparison	350	(7)
II. DEVICE DESIGN, PERFORMANCE, AND PHYSICS OF OPTICAL GAIN OF THE InGaN QUANTUM WELL BLUE/VIOLET DIODE LASERS	357	(22)
1. Introduction to Device Issues	357	(1)
2. Design and Performance of the Blue/Violet InGaN Diode Laser	358	(10)
3. Physics of Optical Gain in the InGaN MQW Diode Laser	368	(11)
III. APPROACHES TO ADVANCED HETEROSTRUCTURE BLUE/VIOLET LIGHT EMITTERS	379	(11)
1. Vertical Cavity Emitters	379	(1)
2. Optical Resonator Design and Fabrication: Demonstration of Optically Pumped VCSEL Operation in 380-410 nm Range	379	(3)
3. Electrical Injection: Resonant Cavity LEDs,	382	(8)
IV. EXTENSION OF THE WAVELENGTH INTO THE UV	390	(7)
1. Current Status of Near-UV Diode Lasers	390	(2)
2. Challenges for Light Emitters for the 350-280 nm UV Range	392	(5)
V. THE GaInNAS QUATERNARY IR LASERS	397	(2)
VI. SUMMARY	399	(1)
REFERENCES	399	(8)
INDEX	407