Amorphous and Heterogeneous Silicon Thin Films: Fundamentals to Devices-1999 : Symposium Held April 5-9, 1999, San Francisco, Calirofnia, U.S.A.

by Branz, Howard M.; Collins, Robert W.; Okamoto, Hiroaki; Guha, Subhendu; Schropp, Ruud

• ISBN13: 9781558994645
• ISBN10: 1558994645
• Edition: 1st
• Format: Hardcover
• Copyright: 2000-02-01
• Publisher: Cambridge Univ Pr
• More Book Details
• Purchase Benefits

Summary

Applications requiring large-area semiconductor coverage rely increasingly on amorphous and heterogeneous silicon materials because they can be deposited at low cost on a variety of substrates. This volume covers the range from fundamental research to the device applications of these materials. A special session on medium-range order is featured, and confirms the belief that ordering correlates with the electronic quality of a-Si:H films. Important experimental observations on metastable effects in a-Si:H are also reported, as are devices and processing strategies. Topics include: growth and properties; high-rate deposition; recrystallization, amorphization and porous silicon; ordering and hydrogen; metastability; defects, band tails and transport; heterogeneous materials and devices; thin-film transistors and displays; solar cells; and detectors, imagers and other devices.

Table of Contents

Preface	p. xvii
Materials Research Society Symposium Proceedings	p. xix
Growth And Properties
The Formation and Behavior of Particles in Silane Discharges	p. 3
The Role of H in the Growth Mechanism of PECVD a-Si:H	p. 13
Development of Ultra-Clean Plasma Deposition Process	p. 19
Remote Silane Plasma Chemistry Effects and Their Correlation With a-Si:H Film Properties	p. 25
Intrinsic, n- and p-Doped a-Si:H Thin Films Grown by dc Magnetron Sputtering With Doped Targets	p. 31
Simulation of Quantum Efficiency Spectroscopy for Amorphous Silicon p-i-n Junctions	p. 37
The Properties of a -SiC:H and a-SiGe:H Films Deposited by 55 kHz PECVD	p. 43
Stable Amorphous Silicon and Improved Microcrystalline Silicon by Photon-Assisted Electron Cyclotron Resonance Chemical Vapor Deposition	p. 49
An Optical Gap Calibration Applied to the Case of Hydrogenated Amorphous Silicon	p. 55
Deposition of a-Si:H Devices in an RTR System for Photovoltaic and Macroelectronic Applications	p. 61
CAT-CVD Process and its Application to Preparation of Si-Based Thin Films	p. 67
A Numerical Model for Hot-Wire Chemical Vapor Deposition of Amorphous Silicon	p. 79
Deposition of High-Quality Amorphous Silicon by a New "Hot Wire" CVD Technique	p. 85
Structural and Optoelectronic Properties of Amorphous and Microcrystalline Silicon Deposited by Low Substrate Temperatures by RF and HW CVD	p. 91
Low Hydrogen Content, High-Quality Hydrogenated Amorphous Silicon Grown by Hot-Wire CVD	p. 97
High-Rate Deposition
High-Rate Growth of Stable a-Si:H	p. 105
Analysis of Plasma Properties and Deposition of Amorphous Silicon Alloy Solar Cells Using Very High Frequency Glow Discharge	p. 115
Fast Deposition of a-Si:H Layers and Solar Cells in a Large-Area (40 [times] 40 cm[superscript 2]) VHF-GD Reactor	p. 121
Performance of a-Si-H Solar Cells at Higher Growth Rates	p. 127
Preparation of Triple-Junction a-Si:H nip Based Solar Cells at Deposition Rates of 10 A/s Using a Very High Frequency Technique	p. 133
High-Quality a-Si:H Films Grown at High Deposition Rates	p. 139
Very Wide-Gap and Device-Quality a-Si:H From Highly H[subscript 2] Diluted SiH[subscript 4] Plasma Decomposed by High rf Power	p. 145
He-Dilution to Increase Deposition Rate and Feedtock Utilization During the Growth of a-Si:H and a -SiGe:H Alloys	p. 151
Problems of Power Feeding in Large Area PECVD of Amorphous Silicon	p. 157
Assessment of Intrinsic-Layer Growth Temperature to High-Deposition-Rate a-Si:H n-i-p Solar Cells Deposited to Hot-Wire CVD	p. 163
Recrystallization, Amorphization and Porous Silicon
A Novel Excimer Laser Crystallization Method of Poly-Si Thin Film by Grid Line Electron Beam Irradiation	p. 171
Low-Temperature Preparation of Poly-Si Thin Films Having Giant Grains	p. 177
The Role of Vacancies and Dopants in Si Solid-Phase Epitaxial Crystallization	p. 183
ESR Measurements of a-Si:H and a-Si[subscript 0.5]Ge[subscript 0.5]:H Films Under Solid-Phase Crystallization	p. 189
Electrochemical Tailoring and Optical Investigation of Advanced Refractive Index Profiles in Porous Silicon Layers	p. 195
A STEM Study of P and Ge Segregation to Grain Boundaries in Si[subscript 1-x]Ge[subscript x] Thin Films	p. 201
Experimental Verification of a Random Medium Model for the Optical Behavior of Ultrathin Crystalline Silicon Layers Grown on Porous Silicon	p. 207
Possibility of Quasi-Single-Crystalline Semiconductor Films	p. 213
Lateral Solid Phase Crystallization of Amorphous Silicon Under High Pressure	p. 219
Spectroscopic Investigations of Crystallinity and Electronic-Structural Transitions Due to Solid Phase Crystallization of Amorphous Si[subscript 1-x]Ge[subscript x]	p. 225
Structural Properties of Amorphous Silicon Produced by Electron Irradiation	p. 231
Ordering and Hydrogen
Amorphous Silicon Alloy Materials and Solar Cells Near the Threshold of Microcrystallinity	p. 239
Medium-Range Order in a-Si:H Below and Above the Onset of Microcrystallinity	p. 251
Kinetics of Light-Induced Changes in p-i-n Cells With Photocrystalline Si:H	p. 263
Structural Changes in a-Si:H Films Deposited on the Edge of Crystallinity	p. 269
Theory of Hydrogen Interactions With Amorphous Silicon	p. 275
Interstitial Trapped Hydrogen Molecules in PECVD Amorphous Silicon	p. 287
NMR Study of Ortho-Molecular Hydrogen in Hydrogenated Amorphous Silicon	p. 293
Comparative Study of Hydrogen Diffusion in Hot-Wire and Glow-Discharge-Deposited a-Si:H	p. 299
Hydrogen Transport in Phosphorus and Boron Doped Polycrystalline Silicon	p. 305
Anisotropy in Hydrogenated Amorphous Silicon Films as Observed Using Polarized FTIR-ATR Spectroscopy	p. 311
Characterization of Hydrogen in Hydrogenated Nanocrystalline Silicon	p. 317
Structural Origin of Bulk Molecular Hydrogen in Hydrogenated Amorphous Silicon	p. 323
Microstructure and Hydrogen Dynamics in a-Si[subscript 1-x]C[subscript x]:H	p. 329
Metastability
Photoinduced Expansion in Hydrogenated Amorphous Silicon	p. 337
Slow Degradation of Hydrogenated Amorphous Silicon Photoconductivity Under Pulsed Illumination	p. 347
Low-Temperature Kinetics for the Growth and Decay of Band-Tail Carriers and Dangling Bonds in Hydrogenated Amorphous Silicon	p. 353
Structural Changes in a-Si:H Studied by X-ray Photoemission Spectroscopy	p. 359
Stability of Amorphous Silicon Thin-Film Transistors	p. 365
Hydrogen Flip Model for Metastable Structural Changes in Amorphous Silicon	p. 371
Hydrogen Diffusion in the Hydrogen Collision Model of Amorphous Silicon Metastability	p. 377
Structural Changes and Hydrogen Motion in a-Si:H Observed by Proton NMR	p. 383
Light-Induced Increase in Two-Level Tunneling States in Hydrogenated Amorphous Silicon	p. 389
A Comparison of the Degradation and Annealing Kinetics in Amorphous Silicon and Amorphous Silicon-Germanium Solar Cells	p. 395
Defects, Band Tails and Transport
A Molecular Dynamics Study of Band Tails in a-Si:H	p. 403
Effects of Chlorine on Dopant Activation in a-Si:H	p. 409
Current Noise Measurements of Surface Defect States in Amorphous Silicon	p. 415
Photoconductivity Transient Response From the Steady State in Amorphous Semiconductors	p. 421
An Experimental Evaluation of Modulated Photocurrent Spectroscopy as a Density of States Probe	p. 427
Modeling of Driff Mobility Experiments on a-Si:H	p. 433
Two Carrier Sensitization as a Spectroscopic Tool for a-Si:H	p. 439
Step Response of a-Si:H Photodiodes	p. 445
Vibrational Properties of a-Si:H Films Containing Voids: Experiment and Modeling	p. 451
Infrared Electroabsorption Spectra in Amorphous Silicon Solar Cells	p. 457
Capacitance Spectroscopy of Defects in a-Si:H/c-Si Heterostructures	p. 463
Optical Transitions in Light-Emitting Nanocrystalline Silicon Thin Films	p. 469
Collection Efficiencies Greater than Unity by Electron or Hole Gating in a-Si:H p-i-n Diodes	p. 475
Heterogeneous Materials and Devices
Microcrystalline Silicon--Relation of Transport Properties and Microstructure	p. 483
Electronic Transitions in Mixed Phase Crystalline/Amorphous Silicon in the Low Crystalline Fraction Regime	p. 495
Polymorphous Silicon: Transport Properties and Solar Cell Applications	p. 501
A Novel p-Type Nanocrystalline Si Buffer at the p/i Interface of a-Si Solar Cells for High Stabilized Efficiency	p. 507
High Rates and Very Low Temperature Fabrication of Polycrystalline Silicon From Fluorinated Source Gas and Their Transport Properties	p. 513
Atomic Force Microscopy Study of Initial Nucleation in the Deposition of [mu]c-Si:H	p. 519
Structure and Optoelectronic Properties as a Function of Hydrogen Dilution of Microcrystalline Silicon Films Prepared by Hot Wire Chemical Vapor Deposition	p. 525
Hydrogen Dilution Effect on the Crystallinity of Silicon Films Grown by Hot Wire Cell Method	p. 531
Stress in Hydrogenated Microcrystalline Silicon Thin Films	p. 537
Charge Transport in the Transition From Hydrogenated Amorphous Silicon to Microcrystalline Silicon	p. 543
Anisotropic Transport in Microcrystalline p-i-n Devices	p. 549
Amorphous Silicon Precipitates in (100) c-Si Films Grown by ECRCVD	p. 555
Growth and Properties of Microcrystalline Germanium-Carbide Alloys	p. 561
Use of a Gas Jet Technique to Prepare Microcrystalline Silicon Based Solar Cells at High i-Layer Deposition Rates	p. 567
Microstructural Defects of Device Quality Hot-Wire CVD Polysilicon Films	p. 573
Microcrystalline Silicon Tunnel Junctions for Amorphous Silicon Based Multijunction Solar Cells	p. 579
Plasma Etching Conditioning of Textured Crystalline Silicon Surfaces for a-Si/c-Si Heterojunctions	p. 585
Role of Bandgap Grading for the Performance of Microcrystalline Silicon Germanium Solar Cells	p. 591
Long-Term Stability of Microcrystalline Silicon p-i-n Solar Cells Exposed to Sunlight	p. 597
High-Quality Microcrystalline Silicon-Carbide Films Prepared by Photo-CVD Method Using Ethylene Gas as a Carbon Source	p. 603
High-Rate Deposition of Microcrystalline Silicon Using Resonance Plasma Source (Helix)--Plasma Properties and Deposition Results	p. 609
Structured Polysilicon for Photonic Applications	p. 615
Thin-Film Transistors and Displays
Laser Crystallized Polysilicon TFTs Using LPCVD, PECVD and PVD Silicon Channel Materials--A Comparative Study	p. 623
Integrated Amorphous and Polycrystalline Silicon TFTs With a Single Silicon Layer	p. 629
Structure Sensitive Hydrogenation Effects in Polysilicon High Voltage Thin-Film Transistors	p. 635
Quasi Drift and Quasi Diffusion: A Grain Size Dependent Polysilicon TFT Model	p. 641
Application of Self-Aligned Amorphous Si Thin-Film Transistors	p. 647
Rugged a-Si:H TFTs on Plastic Substrates	p. 653
Thin-Film Transistors Based on Hot-Wire Amorphous Silicon on Silicon Nitride	p. 659
Thin-Film Transistors of Microcrystalline Silicon Deposited by Plasma Enhanced CVD	p. 665
Temperature Dependent Transient Leakage Currents in Amorphous Silicon Thin-Film Transistors	p. 671
Optical Filter for Fabricating Self-Aligned Amorphous Si TFTs	p. 677
Thin-Film Transistors Based on Microcrystalline Silicon on Polyimide Substrates	p. 683
The Recrystallization Depth Control of the Excimer-Laser-Recrystallized Polycrystalline Silicon Film	p. 689
High-Performance Damascene-Gate Thin-Film Transistors	p. 695
Solar Cells
Flexible a-Si Based Solar Cells With Plastic Film Substrate	p. 703
Novel Amorphous Silicon Solar Cell Using a Manufacturing Procedure With a Temporary Superstrate	p. 713
Real Time Optics of Amorphous Silicon Solar Cell Fabrication on Textured Tin-Oxide-Coated Glass	p. 719
Effect of Interface Roughness on Light Scattering and Optical Properties of a-Si:H Solar Cells	p. 725
Investigation of Textured Back Reflectors for Microcrystalline Silicon Based Solar Cells	p. 731
A New Method to Characterize TCO/p Contact Resistance in a-Si Solar Cells	p. 737
Optimization of High Efficiency Amorphous Silicon Alloy Based Triple-Junction Modules	p. 743
Low-Temperature Deposition of Amorphous Silicon Based Solar Cells	p. 749
Optical Modeling of a-Si Solar Cells	p. 755
Material Requirements for Buffer Layers Used to Obtain Solar Cells With High Open Circuit Voltages	p. 761
Amorphous Silicon Solar Cell Techniques for High-Temperature and/or Reactive Deposition Conditions	p. 767
Simulation of Hydrogenated Amorphous Silicon Germanium Alloys for Bandgap Grading	p. 773
Buffer Layers for Narrow Bandgap a-SiGe Solar Cells	p. 779
Characteristics of Different Thickness a-Si:H/Metal Schottky Barrier Cell Structures--Results and Analysis	p. 785
Amorphous Silicon Solar Cells Techniques for Reactive Conditions	p. 791
Detectors, Imagers and Other Devices
Application of Thin-Film Micromachining for Large-Area Substrates	p. 799
High Resolution, High Fill Factor a-Si:H Sensor Arrays for Optical Imaging	p. 809
UV Imager in TFA Technology	p. 815
Resistless Patterning of Hydrogenated Amorphous Silicon Films	p. 821
Dependence of Image Transient Behavior on Operating Parameters of Amorphous Silicon Image Sensors	p. 827
More Insight Into the Transient Photocurrent Response of Three-Color Detectors	p. 833
Near Infrared Response of Amorphous Silicon Detector Grown With Microcompensated Absorber Layer	p. 839
Effects of Material Properties in Amorphous Silicon Color Detectors	p. 845
Signal Amplification and Leakage Current Suppression in Amorphous Silicon p-i-n Diodes by Field Profile Tailoring	p. 851
Directional Breakdown of Metal/a-Si:H/c-Si Heterostructures and Its Application to PROMs	p. 857
Innovative Diodes Based on Amorphous-Porous Silicon Heterojunction	p. 863
Noise of a-Si:H Pin Diode Pixels in Imagers at Different Operating Conditions	p. 869
Photoinduced Space Charge Effects in a-Si:H Solar Cells	p. 875
Author Index	p. 881
Subject Index	p. 885
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