Preface | p. xvii |
Materials Research Society Symposium Proceedings | p. xix |
Growth And Properties | |
The Formation and Behavior of Particles in Silane Discharges | p. 3 |
The Role of H in the Growth Mechanism of PECVD a-Si:H | p. 13 |
Development of Ultra-Clean Plasma Deposition Process | p. 19 |
Remote Silane Plasma Chemistry Effects and Their Correlation With a-Si:H Film Properties | p. 25 |
Intrinsic, n- and p-Doped a-Si:H Thin Films Grown by dc Magnetron Sputtering With Doped Targets | p. 31 |
Simulation of Quantum Efficiency Spectroscopy for Amorphous Silicon p-i-n Junctions | p. 37 |
The Properties of a -SiC:H and a-SiGe:H Films Deposited by 55 kHz PECVD | p. 43 |
Stable Amorphous Silicon and Improved Microcrystalline Silicon by Photon-Assisted Electron Cyclotron Resonance Chemical Vapor Deposition | p. 49 |
An Optical Gap Calibration Applied to the Case of Hydrogenated Amorphous Silicon | p. 55 |
Deposition of a-Si:H Devices in an RTR System for Photovoltaic and Macroelectronic Applications | p. 61 |
CAT-CVD Process and its Application to Preparation of Si-Based Thin Films | p. 67 |
A Numerical Model for Hot-Wire Chemical Vapor Deposition of Amorphous Silicon | p. 79 |
Deposition of High-Quality Amorphous Silicon by a New "Hot Wire" CVD Technique | p. 85 |
Structural and Optoelectronic Properties of Amorphous and Microcrystalline Silicon Deposited by Low Substrate Temperatures by RF and HW CVD | p. 91 |
Low Hydrogen Content, High-Quality Hydrogenated Amorphous Silicon Grown by Hot-Wire CVD | p. 97 |
High-Rate Deposition | |
High-Rate Growth of Stable a-Si:H | p. 105 |
Analysis of Plasma Properties and Deposition of Amorphous Silicon Alloy Solar Cells Using Very High Frequency Glow Discharge | p. 115 |
Fast Deposition of a-Si:H Layers and Solar Cells in a Large-Area (40 [times] 40 cm[superscript 2]) VHF-GD Reactor | p. 121 |
Performance of a-Si-H Solar Cells at Higher Growth Rates | p. 127 |
Preparation of Triple-Junction a-Si:H nip Based Solar Cells at Deposition Rates of 10 A/s Using a Very High Frequency Technique | p. 133 |
High-Quality a-Si:H Films Grown at High Deposition Rates | p. 139 |
Very Wide-Gap and Device-Quality a-Si:H From Highly H[subscript 2] Diluted SiH[subscript 4] Plasma Decomposed by High rf Power | p. 145 |
He-Dilution to Increase Deposition Rate and Feedtock Utilization During the Growth of a-Si:H and a -SiGe:H Alloys | p. 151 |
Problems of Power Feeding in Large Area PECVD of Amorphous Silicon | p. 157 |
Assessment of Intrinsic-Layer Growth Temperature to High-Deposition-Rate a-Si:H n-i-p Solar Cells Deposited to Hot-Wire CVD | p. 163 |
Recrystallization, Amorphization and Porous Silicon | |
A Novel Excimer Laser Crystallization Method of Poly-Si Thin Film by Grid Line Electron Beam Irradiation | p. 171 |
Low-Temperature Preparation of Poly-Si Thin Films Having Giant Grains | p. 177 |
The Role of Vacancies and Dopants in Si Solid-Phase Epitaxial Crystallization | p. 183 |
ESR Measurements of a-Si:H and a-Si[subscript 0.5]Ge[subscript 0.5]:H Films Under Solid-Phase Crystallization | p. 189 |
Electrochemical Tailoring and Optical Investigation of Advanced Refractive Index Profiles in Porous Silicon Layers | p. 195 |
A STEM Study of P and Ge Segregation to Grain Boundaries in Si[subscript 1-x]Ge[subscript x] Thin Films | p. 201 |
Experimental Verification of a Random Medium Model for the Optical Behavior of Ultrathin Crystalline Silicon Layers Grown on Porous Silicon | p. 207 |
Possibility of Quasi-Single-Crystalline Semiconductor Films | p. 213 |
Lateral Solid Phase Crystallization of Amorphous Silicon Under High Pressure | p. 219 |
Spectroscopic Investigations of Crystallinity and Electronic-Structural Transitions Due to Solid Phase Crystallization of Amorphous Si[subscript 1-x]Ge[subscript x] | p. 225 |
Structural Properties of Amorphous Silicon Produced by Electron Irradiation | p. 231 |
Ordering and Hydrogen | |
Amorphous Silicon Alloy Materials and Solar Cells Near the Threshold of Microcrystallinity | p. 239 |
Medium-Range Order in a-Si:H Below and Above the Onset of Microcrystallinity | p. 251 |
Kinetics of Light-Induced Changes in p-i-n Cells With Photocrystalline Si:H | p. 263 |
Structural Changes in a-Si:H Films Deposited on the Edge of Crystallinity | p. 269 |
Theory of Hydrogen Interactions With Amorphous Silicon | p. 275 |
Interstitial Trapped Hydrogen Molecules in PECVD Amorphous Silicon | p. 287 |
NMR Study of Ortho-Molecular Hydrogen in Hydrogenated Amorphous Silicon | p. 293 |
Comparative Study of Hydrogen Diffusion in Hot-Wire and Glow-Discharge-Deposited a-Si:H | p. 299 |
Hydrogen Transport in Phosphorus and Boron Doped Polycrystalline Silicon | p. 305 |
Anisotropy in Hydrogenated Amorphous Silicon Films as Observed Using Polarized FTIR-ATR Spectroscopy | p. 311 |
Characterization of Hydrogen in Hydrogenated Nanocrystalline Silicon | p. 317 |
Structural Origin of Bulk Molecular Hydrogen in Hydrogenated Amorphous Silicon | p. 323 |
Microstructure and Hydrogen Dynamics in a-Si[subscript 1-x]C[subscript x]:H | p. 329 |
Metastability | |
Photoinduced Expansion in Hydrogenated Amorphous Silicon | p. 337 |
Slow Degradation of Hydrogenated Amorphous Silicon Photoconductivity Under Pulsed Illumination | p. 347 |
Low-Temperature Kinetics for the Growth and Decay of Band-Tail Carriers and Dangling Bonds in Hydrogenated Amorphous Silicon | p. 353 |
Structural Changes in a-Si:H Studied by X-ray Photoemission Spectroscopy | p. 359 |
Stability of Amorphous Silicon Thin-Film Transistors | p. 365 |
Hydrogen Flip Model for Metastable Structural Changes in Amorphous Silicon | p. 371 |
Hydrogen Diffusion in the Hydrogen Collision Model of Amorphous Silicon Metastability | p. 377 |
Structural Changes and Hydrogen Motion in a-Si:H Observed by Proton NMR | p. 383 |
Light-Induced Increase in Two-Level Tunneling States in Hydrogenated Amorphous Silicon | p. 389 |
A Comparison of the Degradation and Annealing Kinetics in Amorphous Silicon and Amorphous Silicon-Germanium Solar Cells | p. 395 |
Defects, Band Tails and Transport | |
A Molecular Dynamics Study of Band Tails in a-Si:H | p. 403 |
Effects of Chlorine on Dopant Activation in a-Si:H | p. 409 |
Current Noise Measurements of Surface Defect States in Amorphous Silicon | p. 415 |
Photoconductivity Transient Response From the Steady State in Amorphous Semiconductors | p. 421 |
An Experimental Evaluation of Modulated Photocurrent Spectroscopy as a Density of States Probe | p. 427 |
Modeling of Driff Mobility Experiments on a-Si:H | p. 433 |
Two Carrier Sensitization as a Spectroscopic Tool for a-Si:H | p. 439 |
Step Response of a-Si:H Photodiodes | p. 445 |
Vibrational Properties of a-Si:H Films Containing Voids: Experiment and Modeling | p. 451 |
Infrared Electroabsorption Spectra in Amorphous Silicon Solar Cells | p. 457 |
Capacitance Spectroscopy of Defects in a-Si:H/c-Si Heterostructures | p. 463 |
Optical Transitions in Light-Emitting Nanocrystalline Silicon Thin Films | p. 469 |
Collection Efficiencies Greater than Unity by Electron or Hole Gating in a-Si:H p-i-n Diodes | p. 475 |
Heterogeneous Materials and Devices | |
Microcrystalline Silicon--Relation of Transport Properties and Microstructure | p. 483 |
Electronic Transitions in Mixed Phase Crystalline/Amorphous Silicon in the Low Crystalline Fraction Regime | p. 495 |
Polymorphous Silicon: Transport Properties and Solar Cell Applications | p. 501 |
A Novel p-Type Nanocrystalline Si Buffer at the p/i Interface of a-Si Solar Cells for High Stabilized Efficiency | p. 507 |
High Rates and Very Low Temperature Fabrication of Polycrystalline Silicon From Fluorinated Source Gas and Their Transport Properties | p. 513 |
Atomic Force Microscopy Study of Initial Nucleation in the Deposition of [mu]c-Si:H | p. 519 |
Structure and Optoelectronic Properties as a Function of Hydrogen Dilution of Microcrystalline Silicon Films Prepared by Hot Wire Chemical Vapor Deposition | p. 525 |
Hydrogen Dilution Effect on the Crystallinity of Silicon Films Grown by Hot Wire Cell Method | p. 531 |
Stress in Hydrogenated Microcrystalline Silicon Thin Films | p. 537 |
Charge Transport in the Transition From Hydrogenated Amorphous Silicon to Microcrystalline Silicon | p. 543 |
Anisotropic Transport in Microcrystalline p-i-n Devices | p. 549 |
Amorphous Silicon Precipitates in (100) c-Si Films Grown by ECRCVD | p. 555 |
Growth and Properties of Microcrystalline Germanium-Carbide Alloys | p. 561 |
Use of a Gas Jet Technique to Prepare Microcrystalline Silicon Based Solar Cells at High i-Layer Deposition Rates | p. 567 |
Microstructural Defects of Device Quality Hot-Wire CVD Polysilicon Films | p. 573 |
Microcrystalline Silicon Tunnel Junctions for Amorphous Silicon Based Multijunction Solar Cells | p. 579 |
Plasma Etching Conditioning of Textured Crystalline Silicon Surfaces for a-Si/c-Si Heterojunctions | p. 585 |
Role of Bandgap Grading for the Performance of Microcrystalline Silicon Germanium Solar Cells | p. 591 |
Long-Term Stability of Microcrystalline Silicon p-i-n Solar Cells Exposed to Sunlight | p. 597 |
High-Quality Microcrystalline Silicon-Carbide Films Prepared by Photo-CVD Method Using Ethylene Gas as a Carbon Source | p. 603 |
High-Rate Deposition of Microcrystalline Silicon Using Resonance Plasma Source (Helix)--Plasma Properties and Deposition Results | p. 609 |
Structured Polysilicon for Photonic Applications | p. 615 |
Thin-Film Transistors and Displays | |
Laser Crystallized Polysilicon TFTs Using LPCVD, PECVD and PVD Silicon Channel Materials--A Comparative Study | p. 623 |
Integrated Amorphous and Polycrystalline Silicon TFTs With a Single Silicon Layer | p. 629 |
Structure Sensitive Hydrogenation Effects in Polysilicon High Voltage Thin-Film Transistors | p. 635 |
Quasi Drift and Quasi Diffusion: A Grain Size Dependent Polysilicon TFT Model | p. 641 |
Application of Self-Aligned Amorphous Si Thin-Film Transistors | p. 647 |
Rugged a-Si:H TFTs on Plastic Substrates | p. 653 |
Thin-Film Transistors Based on Hot-Wire Amorphous Silicon on Silicon Nitride | p. 659 |
Thin-Film Transistors of Microcrystalline Silicon Deposited by Plasma Enhanced CVD | p. 665 |
Temperature Dependent Transient Leakage Currents in Amorphous Silicon Thin-Film Transistors | p. 671 |
Optical Filter for Fabricating Self-Aligned Amorphous Si TFTs | p. 677 |
Thin-Film Transistors Based on Microcrystalline Silicon on Polyimide Substrates | p. 683 |
The Recrystallization Depth Control of the Excimer-Laser-Recrystallized Polycrystalline Silicon Film | p. 689 |
High-Performance Damascene-Gate Thin-Film Transistors | p. 695 |
Solar Cells | |
Flexible a-Si Based Solar Cells With Plastic Film Substrate | p. 703 |
Novel Amorphous Silicon Solar Cell Using a Manufacturing Procedure With a Temporary Superstrate | p. 713 |
Real Time Optics of Amorphous Silicon Solar Cell Fabrication on Textured Tin-Oxide-Coated Glass | p. 719 |
Effect of Interface Roughness on Light Scattering and Optical Properties of a-Si:H Solar Cells | p. 725 |
Investigation of Textured Back Reflectors for Microcrystalline Silicon Based Solar Cells | p. 731 |
A New Method to Characterize TCO/p Contact Resistance in a-Si Solar Cells | p. 737 |
Optimization of High Efficiency Amorphous Silicon Alloy Based Triple-Junction Modules | p. 743 |
Low-Temperature Deposition of Amorphous Silicon Based Solar Cells | p. 749 |
Optical Modeling of a-Si Solar Cells | p. 755 |
Material Requirements for Buffer Layers Used to Obtain Solar Cells With High Open Circuit Voltages | p. 761 |
Amorphous Silicon Solar Cell Techniques for High-Temperature and/or Reactive Deposition Conditions | p. 767 |
Simulation of Hydrogenated Amorphous Silicon Germanium Alloys for Bandgap Grading | p. 773 |
Buffer Layers for Narrow Bandgap a-SiGe Solar Cells | p. 779 |
Characteristics of Different Thickness a-Si:H/Metal Schottky Barrier Cell Structures--Results and Analysis | p. 785 |
Amorphous Silicon Solar Cells Techniques for Reactive Conditions | p. 791 |
Detectors, Imagers and Other Devices | |
Application of Thin-Film Micromachining for Large-Area Substrates | p. 799 |
High Resolution, High Fill Factor a-Si:H Sensor Arrays for Optical Imaging | p. 809 |
UV Imager in TFA Technology | p. 815 |
Resistless Patterning of Hydrogenated Amorphous Silicon Films | p. 821 |
Dependence of Image Transient Behavior on Operating Parameters of Amorphous Silicon Image Sensors | p. 827 |
More Insight Into the Transient Photocurrent Response of Three-Color Detectors | p. 833 |
Near Infrared Response of Amorphous Silicon Detector Grown With Microcompensated Absorber Layer | p. 839 |
Effects of Material Properties in Amorphous Silicon Color Detectors | p. 845 |
Signal Amplification and Leakage Current Suppression in Amorphous Silicon p-i-n Diodes by Field Profile Tailoring | p. 851 |
Directional Breakdown of Metal/a-Si:H/c-Si Heterostructures and Its Application to PROMs | p. 857 |
Innovative Diodes Based on Amorphous-Porous Silicon Heterojunction | p. 863 |
Noise of a-Si:H Pin Diode Pixels in Imagers at Different Operating Conditions | p. 869 |
Photoinduced Space Charge Effects in a-Si:H Solar Cells | p. 875 |
Author Index | p. 881 |
Subject Index | p. 885 |
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