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9780471982937

Amorphous Silicon

by ; ; ;
  • ISBN13:

    9780471982937

  • ISBN10:

    0471982938

  • Edition: 1st
  • Format: Hardcover
  • Copyright: 1999-03-12
  • Publisher: WILEY
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Summary

Amorphous Silicon Kazunobu Tanaka National Institute for Advanced Interdisciplinary Research, Ibaraki, Japan Eiichi Maruyama Hitachi Ltd, Ibaraki, Japan Toshikazu Shimada Hitachi Ltd, Ibaraki, Japan Hiroaki Okamoto Osaka University, Osaka, Japan Translated by Takeshi Sato, National Institute for Advanced Interdisciplinary Research, Ibaraki, Japan Amorphous silicon has substantially different properties as compared to crystalline silicon. It has therefore become recognized as a fascinating and important material in its own right, with many interesting facets that lead to a range of novel and still developing applications. Amorphous Silicon introduces the reader to this field by first discussing what is meant by the amorphous state. It details the way in which amorphous silicon is prepared, and the growth mechanism. The main structural, optical and electronic properties are then covered in detail, and there is a full chapter on the structural stability of the material, including photoinduced effects. Finally, a number of the most exciting applications of amorphous silicon are presented, including its use in solar cells, photo-sensors and liquid crystal displays. Amorphous Silicon will be of great interest to all those working in solid state physics or chemistry, materials science and electronic engineering, from postgraduate students to more experienced workers in these fields.

Author Biography

Kazunobu Tanaka is the author of Amorphous Silicon, published by Wiley.

Table of Contents

Preface to the Japanese Edition ix(4)
Preface to the English Edition xiii
1 Introduction
1(26)
1.1 What is the Amorphous State?
1(9)
1.1.1 Definition of Terms
1(1)
1.1.2 The Thermodynamic State
2(3)
1.1.3 Structural Disorder
5(3)
1.1.4 Classification of Amorphous Semiconductors
8(2)
1.2 A Short History of Amorphous Semiconductor Studies
10(14)
1.2.1 Pioneering Work
10(7)
1.2.2 Advent of Hydrogenated Amorphous Silicon
17(4)
1.2.3 Academic Societies and Communities
21(3)
1.3 Organization of the Book
24(1)
References
25(2)
2 Methods of Preparation and Growth Processes
27(31)
2.1 Outline of Preparative Methods
27(10)
2.1.1 Non-Equilibrium Processes and Amorphous Structures
27(4)
2.1.2 Preparation of Amorphous Silicon
31(6)
2.2 Formation of SiH(4) Plasma
37(10)
2.2.1 Plasma Reactor Construction and Electron Energy Distribution
37(2)
2.2.2 Electron Impact Dissociation of SiH(4)
39(2)
2.2.3 Steady-State Conditions of the SiH(4) Plasma: Merits of Plasma Diagnosis
41(6)
2.3 Growth Mechanisms
47(9)
2.3.1 Lifetimes and Diffusion of Species in the SiH(4) Plasma
47(1)
2.3.2 Adsorption/Desorption of Species and Growth Rates
48(4)
2.3.3 Surface-Process Model
52(1)
2.3.4 Surface Diffusion and Network Structure
53(3)
References
56(2)
3 Structural Properties
58(45)
3.1 Morphology (Macroscopic Aspects)
58(2)
3.2 Hydrogen in a-Si:H Films
60(8)
3.2.1 Silicon-Hydrogen Bond Types
60(3)
3.2.2 Spatial Distribution of Hydrogen
63(4)
3.2.3 Thermal Stability of Hydrogen
67(1)
3.3 Density
68(3)
3.3.1 Hydrogen-Free Amorphous Silicon
68(1)
3.3.2 Hydrogenated Amorphous Silicon
69(2)
3.4 Structural Order
71(8)
3.4.1 Amorphous Structure and Hierarchy of Order
71(1)
3.4.2 Hydrogen-Free Amorphous Silicon
72(3)
3.4.3 Hydrogenated Amorphous Silicon
75(4)
3.5 Defects
79(16)
3.5.1 Concepts and Classification of Defects
79(3)
3.5.2 Electron Spin Resonance Spectroscopy Studies: Dangling Bonds Versus Floating Bonds
82(3)
3.5.3 Defect Density and Hydrogen in Films
85(4)
3.5.4 Thermal Equilibrium Process in Defect Formation
89(6)
3.6 Impurities
95(1)
3.7 Doping
96(4)
3.7.1 Doping Characteristics and Efficiencies: Phosphorus and Boron
96(2)
3.7.2 Hydrogen in Doped a-Si:H
98(1)
3.7.3 Electron Spin Resonance Studies
99(1)
References
100(3)
4 Optical and Electrical Properties
103(84)
4.1 Disorder and Electronic Structure
103(15)
4.1.1 Electronic Structure of Amorphous Semiconductors
103(2)
4.1.2 Conduction Band and Valence Band
105(2)
4.1.3 Electronic State Near the Band Edge
107(4)
4.1.4 Localized Levels Based on Structural Defects
111(7)
4.2 Structure of the Optical Absorption Edge
118(14)
4.2.1 Features of the Optical Absorption Spectrum
118(2)
4.2.2 Inter-Band Transition Region
120(4)
4.2.3 Band-Tail Transition
124(4)
4.2.4 Optical Transitions Caused by Structural Defects
128(4)
4.3 Electrical Properties
132(15)
4.3.1 Mechanism of Electrical Conduction
132(4)
4.3.2 DC Conductivity and Thermoelectric Power
136(4)
4.3.3 Hall Effect
140(2)
4.3.4 Impurity Doping Effect
142(5)
4.4 Transport and Recombination of Excess Carrier
147(21)
4.4.1 Carrier Capture and Non-Radiative Recombination
147(3)
4.4.2 Recombination and Photoconductivity Under Steady Illumination Conditions
150(5)
4.4.3 Carrier Transport Characteristics Under Transient Illumination Conditions
155(4)
4.4.4 Mobility and Lifetime of Carriers
159(7)
4.4.5 Photoluminescence
166(2)
4.5 Silicon Alloy Materials and Multilayer Film Properties
168(11)
4.5.1 Basic Properties of Silicon Alloy Materials
168(2)
4.5.2 Properties of Multilayer Films
170(9)
References
179(8)
5 Structural Stability and Photo-Induced Effects
187(31)
5.1 Nature of the Non-Equilibrium Solid
187(2)
5.2 Photo-Induced Effects in Amorphous Semiconductors
189(5)
5.2.1 Photodarkening and Photostructural Changes
189(1)
5.2.2 Photo-Induced Metastable ESR Centers
189(3)
5.2.3 Structural Origins of Photo-Induced Metastability
192(2)
5.3 The Staebler-Wronski Effect
194(14)
5.3.1 Description of the Phenomenon
194(3)
5.3.2 Aspects of Kinetics
197(3)
5.3.3 Structural Origins and Mechanisms of Defect Formation: Microscopic Models
200(5)
5.3.4 Phosphorus-Doped a-Si:H
205(3)
5.4 Thermal Stability
208(7)
5.4.1 Diffusion and Desorption of Hydrogen and Crystallization of Amorphous Films
208(4)
5.4.2 Crystallization Processes in Multilayer Films
212(3)
References
215(3)
6 Applications
218(36)
6.1 Features and Applications of Amorphous Semiconductors
218(6)
6.2 Examples of Applications of Amorphous Semiconductors
224(29)
6.2.1 Solar Cells
224(7)
6.2.2 Solid-State Photosensors
231(5)
6.2.3 Field-Effect (Thin-Film) Transistors for Liquid Crystal Displays
236(6)
6.2.4 Photoreceptor Drums for Electrophotography and Laser-Beam Printers
242(3)
6.2.5 Amorphous Selenium Vidicon-Type Image Pick-Up Tubes
245(8)
References
253(1)
Index 254

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