Compound Semiconductor Surface Passivation and Novel Device Processing

by Hasegawa, Hideki; Hong, M.; Lu, Z. H.; Pearton, S. J.

• ISBN13: 9781558994805
• ISBN10: 1558994807
• Format: Hardcover
• Copyright: 1999-09-01
• Publisher: Materials Research Society

Summary

This book covers a wide range of activity in the field of passivation and control of compound semiconductor surfaces and associated novel processing techniques for electronic and photonic devices. The markets for GaAs and InP-based electronics cover wireless communication, mobile phones, defense applications where radiation-hardness is critical, automobile collision avoidance radar and satellites. On the photonics side, displays, communications systems, infrared and UV detectors and lighting applications are prime markets. In all of these devices there is a critical need for control of the surface properties and for reliable long-term encapsulation/passivation of the surface. Compound semiconductors typically have relatively high surface recombination velocities and novel processing methods which minimize surface damage are, therefore, extremely important. Surface passivation and novel device processing form the basis for the book. Topics include: fundamentals of surfaces and their passivation; novel approaches for surface passivation and device processing; oxides - structural, transport and optical properties; compound semiconductor surface passivation and novel device processing and electronic devices and processing.

Table of Contents

Preface
Acknowledgments
Materials Research Society Symposium Proceedings
Theory of the Sulfur-Passivated InP(001) Surface	p. 3
In Situ Surface Passivation of GaAs by Thermal Nitridation Using Metalorganic Vapor Phase Epitaxy	p. 15
Structure of Single-Crystal Gd[subscript 2]O[subscript 3] Films on GaAs(100)	p. 21
Structure of Chemically Passivated Semiconductor Surfaces Determined Using X-ray Absorption Spectroscopy	p. 31
A Novel Surface Passivation Structure for III-V Compound Semiconductors Utilizing a Silicon Interface Control Layer and its Application	p. 45
The (Ga[subscript 2]O[subscript 3])[subscript 1-x](Gd[subscript 2]O[subscript 3])[subscript x] Oxides With x = 0-1.0 for GaAs Passivation	p. 57
Development of Low-Temperature Silicon Nitride and Silicon Dioxide Films by Inductively Coupled Plasma Chemical Vapor Deposition	p. 69
Selective Oxidation to Form Dielectric Apertures for Low Threshold VCSELs and Microcavity Spontaneous Light Emitters	p. 81
Passivation of Interfaces in High-Efficiency Photovoltaic Devices	p. 95
Electrical and Optical Study of Charge Traps at Passivated GaAs Surfaces	p. 107
A Study of Semiconductor Quantum Structures by Microwave Modulated Photoluminescence	p. 119
Characterization of GaS-Passivated Quantum-Well Laser Diodes	p. 125
Energy Band Offsets at a Ga[subscript 2]O[subscript 3](Gd[subscript 2]O[subscript 3])-GaAs Interface	p. 131
One-Step Silicon Nitride Passivation by ECR-CVD for Heterostructure Transistors and MIS Devices	p. 137
Oxidation and Carbon Contamination in GaAs (100) Wet Treatments	p. 145
DX Center Energy Level in In[subscript x]Al[subscript 1-x]As Compounds	p. 151
Si[subscript 1-x]Ge[subscript x] Oxidation by Plasma Assisted Processing: Oxide Uniformity and Electrical Properties	p. 157
Modelling of Surface Manipulation by Femtosecond Laser Pulses	p. 163
Production of InSb Thin Films Through Annealing Sb[subscript 2]S[subscript 3]-In Thin Films	p. 169
Chemical Vapor Deposited Tungsten Film on Molecular Layer Epitaxially-Grown GaAs and Its Application to Low Resistivity Contact	p. 175
Novel In Situ Ion Bombardment Process for a Thermally Stable (]800[degree]C) Plasma Deposited Dielectric	p. 183
Low Energy, High Density Plasma (ICP) for Low Defect Etching and Deposition Applications on Compound Semiconductors	p. 189
Wet Oxidation of High-Al-Content III-V Semiconductors: Important Materials Considerations for Device Applications	p. 203
Studies of Surface State Densities of Semiconductors by Room-Temperature Photoreflectance	p. 213
Advances in GaAs MOSFETs Using Ga[subscript 2]O[subscript 3](Gd[subscript 2]O[subscript 3]) as Gate Oxide	p. 219
Passivation of InGaAs/InP Heterostructures	p. 227
Surface Passivation of GaAs Power FETs	p. 239
MBE Growth of Oxides for III-N MOSFETs	p. 247
Interface State Densities for SiN[subscript x]:H on Cleaved GaAs and InP(110)	p. 253
Wet and Dry Etching Characteristics of Electron Beam Deposited SiO and SiO[subscript 2]	p. 259
Anodic Sulfidation and Model Characterization of GaAs (100) in (NH[subscript 4])[subscript 2]S[subscript x] Solution	p. 265
High-Density Plasma-Induced Etch Damage of GaN	p. 271
Selective Dry Etching of the GaN/InN/AiN, GaAs/AlGaAs and GaAs/InGaP Systems	p. 281
Kinetics of the Interaction of Atomic Species With (100) Gallium Arsenide Surfaces	p. 287
Author Index	p. 293
Subject Index	p. 295
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