Extended Defects in Semiconductors: Electronic Properties, Device Effects and Structures

by D. B. Holt , B. G. Yacobi

• ISBN13: 9780521819343
• ISBN10: 0521819342
• Edition: 1st
• Format: Hardcover
• Copyright: 2007-04-12
• Publisher: Cambridge University Press

Summary

The elucidation of the effects of structurally extended defects on electronic properties of materials is especially important in view of the current advances in electronic device development that involve defect control and engineering at the nanometer level. This book surveys the properties, effects, roles and characterization of extended defects in semiconductors. The basic properties of extended defects (dislocations, stacking faults, grain boundaries, and precipitates) are outlined, and their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization are discussed. These topics are among the central issues in the investigation and applications of semiconductors and in the operation of semiconductor devices. The authors preface their treatment with an introduction to semiconductor materials and conclude with a chapter on point defect maldistributions. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.

Author Biography

B. G. Yacobi is an adjunct professor in the Department of Materials Science and Engineering at the University of Toronto.

Table of Contents

Preface	p. xi
Semiconducting materials	p. 1
Materials development and crystal growth techniques	p. 1
Electron energy levels and energy bands	p. 10
Bonding and the crystal chemistry of semiconducting materials	p. 15
Crystal structures of the most important semiconductors	p. 20
Symmetry, Bloch waves and energy band theory	p. 27
Complex semiconductors and chemical bonding	p. 38
Energy band engineering	p. 45
Materials development and materials competition	p. 60
References	p. 67
An introduction to extended defects	p. 73
Basic definitions	p. 74
Types of extended defect in semiconductors	p. 75
Dislocations, plastic deformation and slip systems	p. 77
Electrical effects of dislocations in semiconductors	p. 103
Plasticity of semiconductors	p. 104
References	p. 117
Symbols	p. 120
Characterization of extended defects in semiconductors	p. 122
Introduction	p. 122
Microscopy techniques	p. 123
Light microscopy	p. 123
Scanning laser beam microscopy techniques	p. 127
Electron microscopy	p. 128
Transmission electron microscopy	p. 130
Scanning electron microscopy	p. 136
Field emission gun scanning transmission electron microscopy	p. 144
X-ray topography	p. 146
Scanning probe microscopy	p. 147
Rutherford backscattering	p. 154
Positron annihilation spectroscopy	p. 154
Common acronyms for (micro) characterization techniques	p. 156
References	p. 157
Core structures and mechanical effects of extended defects specific to semiconductors	p. 163
Atomic core structure of dislocations	p. 163
Semiconductor dislocation dynamics	p. 222
Dislocations in II-VI compounds	p. 252
Plastic deformation and the microdynamical theory of plasticity	p. 278
Dislocations and area defects: geometry, formation and properties	p. 286
Epitaxial interfaces and misfit dislocations	p. 331
Dislocations and point defects	p. 345
Growth and processing induced defects	p. 357
References	p. 375
Symbols	p. 410
The electrical, optical and device effects of dislocations and grain boundaries	p. 412
Introduction to the electrical effects of dislocations and other defects in semiconductors	p. 412
The electrical effects of the deformation of semiconductors: the Read theory	p. 425
Recombination at dislocations	p. 436
The effect of dislocations on optical absorption	p. 446
SEM EBIC microscopy of individual dislocations	p. 448
SEM CL microscopy of individual dislocations	p. 485
Scanning probe microscopy of extended defects	p. 520
Effect of dislocations on transport properties of epitaxial heterostructures	p. 522
Summary: the electrical properties of dislocations	p. 530
The electrical and luminescent effects of grain boundaries in semiconductors	p. 533
The role of defects in devices	p. 546
Device benefits of dislocations and grain boundaries	p. 558
References	p. 572
Point defect materials problems	p. 606
Introduction	p. 606
Impurity precipitation	p. 606
Point defect interactions	p. 607
Phase separation and ordering in semiconducting compounds and alloys	p. 610
Large-scale, grown-in spatial maldistributions of point defects	p. 611
Major persisting issues	p. 620
References	p. 621
Index	p. 625
Table of Contents provided by Ingram. All Rights Reserved.