Frontiers Of Characterization And Metrology For Nanoelectronics: 2007 International Conference on Frontiers of Characterization and Metrology for Nanoelectronics, Gaithersburg, Maryland 27-29 March 2007

by Seiler, David G.; Diebold, Alain C.; McDonald, Robert; Garner, C. Michael; Herr, Dan

• ISBN13: 9780735404410
• ISBN10: 0735404410
• Edition: 1st
• Format: Hardcover
• Copyright: 2007-09-26
• Publisher: Amer Inst of Physics

Summary

This book contains peer-reviewed papers presented at the 2007 International Conference on Frontiers of Characterization and Metrology. It emphasizes the frontiers of innovation in the characterization and metrology needed to advance nanoelectronics. It provides an effective portrayal of the industry's characterization and metrology needs and how they are being addressed. It also offers a foundation for further advances in metrology and new ideas for research and development.

Table of Contents

There's Plenty of Difficulty near the Bottom	p. 3
CEA-LETI as a European Model of Cooperation in Nanoelectronics	p. 12
Characterization and Metrology for Nanoelectronics	p. 20
Metrology for Emerging Research Materials and Devices	p. 34
Review of NSOM Microscopy for Materials	p. 43
Optical Characterization Methods for Identifying Charge Trapping States in Thin Dielectric Films	p. 53
Photo-Reflectance Characterization of Nanometer Scale Active Layers in Si	p. 64
Development of a Focused-Beam Ellipsometer Based on a New Principle	p. 69
Measuring Trench Structures for Microelectronics with Model-Based Infrared Reflectometry	p. 74
Enhancement of Infrared Spectroscopy Capabilities for Nanoelectronic and Nanotechnology Applications	p. 79
Nano-Raman: Monitoring Nanoscale Stress	p. 84
Extending Conventional Scatterometry Using Generalized Ellipsometry	p. 89
Investigation of Apertureless NSOM for Measurement of Stress in Strained Silicon-on-Insulator Test Structures	p. 94
Metrology and Optical Characterization of Plasma Enhanced Chemical Vapor Deposition, (PECVD), Low Temperature Deposited Amorphous Carbon Films	p. 99
Manufacture and Metrology of 300 mm Silicon Wafers with Ultra-Low Thickness Variation	p. 105
Real-Time, High Resolution, Dynamic Surface Charge Wafer Mapping for Advanced Ion Implant Process Control	p. 111
Laser Scattering: A Fast, Sensitive, In-Line Technique for Advanced Process Development and Monitoring	p. 116
In Situ Monitoring of Hafnium Oxide Atomic Layer Deposition	p. 121
Analysis of Nickel Silicides by SIMS and LEAP	p. 129
Ion Profiling of Implanted Dopants in Si (001) with Excess Vacancy Concentration	p. 137
SMS Analyses of Ultra-Low Energy B Ion Implants in Si: Evaluation of Profile Shape and Dose Accuracy	p. 142
Use of Drop-on-Demand Inkjet Printing Technology to Produce Trace Metal Contamination Standards for the Semiconductor Industry	p. 146
Thin-Film Nanocalorimetry: A New Approach to the Evaluation of Interfacial Stability for Nanoelectronic Applications	p. 151
Strength and Fracture Measurements at the Nano Scale	p. 156
Helium Ion Microscopy: A New Technique for Semiconductor Metrology and Nanotechnology	p. 161
Need for Standardization of EBSD Measurements for Microstructural Characterization of Thin Film Structures	p. 168
Chemical Mechanical Planarization (CMP) Metrology for 45/32 nm Technology Generations	p. 173
Thin Films Characterization by Ultra Trace Metrology	p. 178
Off-Specular X-Ray and Neutron Reflectometry for the Structural Characterization of Buried Interfaces	p. 185
Process Monitoring and Surface Characterization by XPS in a Semiconductor Fabrication Line	p. 191
Silicon Loss Metrology Using Synchrotron X-Ray Reflectance and Bragg Diffraction	p. 196
Distribution Correction for Rapid, High Precision XPS Measurements of Thickness and Dose	p. 201
X-Ray Reflectivity Measurements of Nanoscale Structures: Limits of the Effective Medium Approximation	p. 209
CMP Control of Multi-Layer Inter-Layer Dielectrics (ILD) Using X-Ray Reflectivity	p. 216
Asymmetric Relaxation of SiGe in Patterned Si Line Structures	p. 220
Applications of X-Ray Reflectometry to Develop and Monitor FEOL Processes for sub-45nm Technology Nodes	p. 226
USJ Metrology: From 0D to 3D Analysis	p. 233
Leakage Current and Dopant Activation Characterization of SDE/Halo CMOS Junctions with Non-Contact Junction Photo-Voltage Metrology	p. 246
NIST Traceable Small Signal Surface Photo Voltage Reference Wafer	p. 251
Micro-Probe CV and IV Characterization of Thin Dielectric Films on Product-Wafer Scribe-Line Structures	p. 255
Dopant Activation and Profile Determination with an Elastic Material Probe (EM-Probe)	p. 261
Direct Monitoring of EOT-J[subscript LEAK] Characteristics for SiON and High-[kappa] Gate Dielectrics	p. 265
Application of Non-Contact Corona-Kelvin Metrology for Characterization of Plasma Nitrided SiO[subscript 2]	p. 270
The Continuous Anodic Oxidation Technique	p. 275
Electrical Properties of Hybrid-Orientation Silicon Bonded Interfaces	p. 279
NIST Method for Determining Model-Independent Structural Information by X-Ray Reflectometry	p. 287
Coupling of Advanced Optical and Chemical Characterization Techniques for Optimization of High-[kappa] Dielectrics with Nanometer Range Thickness	p. 292
Combinatorial Methodologies Applied to the Advanced CMOS Gate Stack	p. 297
Distinguishability of N Composition Profiles in SiON Films on Si by Angle-Resolved X-Ray Photoelectron Spectroscopy	p. 303
Internal Photoemission Spectroscopy of Metal Gate/High-[kappa]/Semiconductor Interfaces	p. 308
Spectroscopic Studies of Band Edge Electronic States in Elemental High-[kappa] Oxide Dielectrics on Si and Ge Substrates	p. 315
VUV Reflectometry for Thin Film Thickness and Composition Metrology and Process Development and Control	p. 320
Gate Metal-Induced Diffusion and Interface Reactions in Hf Oxide Films on Si	p. 324
Hard X-Ray Photoemission Experiments on Novel Ge-Based Metal Gate/High-[kappa] Stacks	p. 329
Metrology of Silicide Contacts for Future CMOS	p. 337
Ultra Low-[kappa] Metrology Using X-Ray Reflectivity and Small-Angle X-Ray Scattering Techniques	p. 347
Under-Bump Metallization (UBM) Control Using X-Ray Fluorescence (XRF)	p. 352
Characterization of Copper Line Array Erosion with Picosecond Ultrasonics	p. 357
Comparison of Several Metrology Techniques for In-Line Process Monitoring of Porous SiOCH	p. 362
Microwave impedance Microscope for Non-Contact Electrical Metrology of Nano-Interconnect Materials	p. 367
EUV Lithography: New Metrology Challenges	p. 375
A Laboratory Scale Critical-Dimension Small-Angle X-Ray Scattering Instrument	p. 382
CD Reference Materials Fabricated on Monolithic 200 mm Wafers for Automated Metrology Tool Applications	p. 387
Modeling and Analysis of Scatterometry Signatures for Optical Critical Dimension Reference Material Applications	p. 392
Zero-Order and Super-Resolved Imaging of Arrayed Nanoscale Lines Using Scatterfield Microscopy	p. 397
Line Edge Roughness and Cross Sectional Characterization of Sub-50 nm Structures Using Critical Dimension Small Angle X-Ray Scattering	p. 402
Linewidth Measurement Based on Automatically Matched and Stitched AFM Images	p. 407
Hunting the Origins of Line Width Roughness with Chemical Force Microscopy	p. 413
Metrology for Grayscale Lithography	p. 419
Automated Metrology for SEM Calibration and CD Line Measurements Using Image Analysis and SEM Modeling Methods	p. 423
Metrology Related to the Multilayer Mirrors in an Extreme-Ultraviolet Stepper	p. 428
Analytics and Metrology of Strained Silicon Structures by Raman and Nano-Raman Spectroscopy	p. 435
New Materials and Structures for Transistors Based on Spin, Charge and Wavefunction Phase Control	p. 445
Metrology and Characterization for Extending Silicon CMOS	p. 449
Methods to Characterize the Electrical and Mechanical Properties of Si Nanowires	p. 457
Fluorescent Tag Based Metrology for Self-Assembled Molecular Devices	p. 462
The Characterization of Silicon-Based Molecular Devices	p. 467
SEMPA Imaging for Spintronics Applications	p. 472
Spin-Polarized Inelastic Electron Tunneling Spectroscopy of Molecular Magnetic Tunnel Junctions	p. 477
Impedance and Capacitance Measurement of Individual Carbon Nanotubes	p. 483
An Introduction to the Helium Ion Microscope	p. 489
Dopant Profiling in the TEM, Progress towards Quantitative Electron Holography	p. 497
Energy-Filtered Photoelectron Emission Microscopy (EF-PEEM) for Imaging Nanoelectronic Materials	p. 502
A Method for Precise TEM Sample Preparation Using the FIB Ex-Situ Lift-Out Technique with a Modified Copper Ring in Semiconductor Devices	p. 507
Computational Scanning Electron Microscopy	p. 512
Protocol Optimization for Work-Function Measurements of Metal Gates Using Kelvin Force Microscopy	p. 521
Metrology for High-Frequency Nanoelectronics	p. 525
Scanning Kelvin Force Microscopy for Characterizing Nanostructures in Atmosphere	p. 530
Surface Potential Mapping and Charge Center Detection on Oxidized Silicon Surfaces by Vacuum-Gap Modulation Scanning Tunneling Spectroscopy	p. 535
Effects of Topography and Multi-Asperity Contacts on Nano-Scale Elastic Property Measurements by Atomic Force Acoustic Microscopy	p. 540
AFM Tips for 58 nm and Smaller Node Applications	p. 545
Nano-Raman Imaging Is Reaching Semiconductors	p. 549
Doping Nanocrystals and the Role of Quantum Confinement	p. 555
Nanoelectronics: Metrology and Computation	p. 563
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