Frontiers in Electronics : From Materials to Systems - Proceedings of the 1999 Workshop on Frontiers in Electronics (WOFE), Villard de Lans, France, 31 May-4 June 1999

by Park, Yoon-Soo; Luryi, S.; Shur, M. S.; Xu, J. M.; Zaslavsky, A.; Advanced Workshop on Frontiers in Electr; Park, Yoon-Soo

• ISBN13: 9789810243616
• ISBN10: 9810243618
• Format: Hardcover
• Copyright: 2000-06-01
• Publisher: WORLD SCIENTIFIC PUB CO INC

Summary

Proceedings of the 1999 Advanced Workshop on 'Frontiers in Electronics' WOFE'99, held at the Grand Hotel de Paris in Villard de Lans, France, May 31-June 4, 1999. The workshop represented the whole spectrum of microelectronics materials, as well as a host of other emerging technologies.

Table of Contents

Preface	v
Y.-S. Park
S. Luryi
M. S. Shur
J. M. Xu
A. Zaslavsky
Introduction
Recent Advances and Future Trends in Modern Electronics	1	(4)
Y.-S. Park
Emerging Microelectronic Materials
Fabrication of Electron Field Emitters Using Carbon Nanotubes	5	(8)
Y. C. Choi
Y. S. Park
Y. H. Lee
W. B. Choi
N. S. Lee
J. M. Kim
C. J. Lee
D. W. Kim
T. J. Lee
Metal Induced Crystallization of Amorphous Silicon	13	(12)
J. Jang
S. Y. Yoon
Polarization Effects in Nitride Semiconductor Heterostructures	25	(14)
H. Morkoc
R. Cingolani
F. Della Sala
A. DiCarlo
P. Lugli
B. Gil
Ferroelectric Nonvolatile Memory FETs Based on a Novel Buffer Layer Structure	39	(8)
H. K. Kim
N. A. Basit
Superlattice Materials for the Next Generation of Long Wavelength Infrared Detectors	47	(8)
G. J. Brown
F. Szmulowicz
K. Mahalingam
A. Saxler
R. Linville
S. Elhamri
C.-H. Lin
C. H. Kuo
W. Y. Hwang
Physical Phenomena, Advanced and Quantum Devices, and Nanoelectronics
The Role of Ballistic Electron Emission Microscopy for Characterization of Physical Phenomena in Semiconductor Alloys and Quantum Structures	55	(20)
V. Narayanamurti
M. Kozhevnikov
VLSI-Compatible Multiemitter HBTs with Enhanced Logic Functionality	75	(8)
A. Zaslavsky
M. Mastrapasqua
C. A. King
R. W. Johnson
R. Pillarisetty
J. Liu
S. Luryi
Room Temperature Single Electron Devices by Scanning Probe Process	83	(10)
K. Matsumoto
(111)-Oriented GaAs/AlGaAs and InGaAs/GaAs Quantum Well Structures Fabricated by MOVPE and Their Optical and Strain-Induced Piezoelectric Properties	93	(10)
S. Cho
A. Sanz-Hervas
J. Kim
A. Majerfeld
B. W. Kim
Electron Drift Velocity of Two-Dimensional Electron Gas in Compound Semiconductors	103	(8)
A. Dmitriev
V. Kachorovski
M. S. Shur
M. Stroscio
Frontiers in Electronic Noise: From Submicron to Nano Structures	111	(8)
L. Reggiani
C. Pennetta
Gy. Trefan
J. C. Vaissiere
L. Varani
V. Gruzhinskis
A. Reklaitis
P. Shiktorov
E. Starikov
T. Gonzalez
J. Mateos
D. Pardo
O. M. Bulashenko
Factors Limiting the Maximum Operating Voltage of Microwave Devices	119	(10)
E. Zanoni
G. Meneghesso
A. Di Carlo
P. Lugli
L. Rossi
SOI and MEMS
Silicon on Insulator Technology	129	(2)
S. Cristoloveanu
Why Can Smart Cut® Change the Future of Microelectronics?	131	(16)
A. J. Auberton-Herve
M. Bruel
Advanced Sensors and Microsystems on SOI	147	(8)
W. Mokwa
Optimized Design of Subband Structure in MOS Inversion Layer for Realizing High Performance and Low Power Si MOSFETs	155	(16)
S. Takagi
Ultra Large Scale Electronics (ULSI)
Overview of the ULSI Session and Chapter	171	(4)
H. Iwai
T. Ikoma
Y. Kado
Limitations of (and Off) the SIA Roadmap Trends	175	(8)
R. Doering
Present Status and Future Trends of Asian Semiconductor Industry	183	(4)
C. Y. Chang
The DRAM Odyssey: From Kilobits to Gigabytes and Beyond	187	(10)
H.-G. Lee
K.-H. Lee
K.-H. Yoon
J.-S. Roh
J.-H. Ahn
To Fill the Gap between Si-ULSI and Nanodevices	197	(8)
T. Hiramoto
Innovative Integration Based on Silicon-Core Technologies for Sensor and Communications Applications	205	(12)
T. Nagatsuma
K. Machida
H. Ishii
N. Sahri
M. Shinagawa
H. Kyuragi
J. Yamada
Ultimate MOSFETs on SOI: Ultra Thin, Single Gate, Double Gate, or Ground Plane	217	(14)
S. Cristoloveanu
T. Ernst
D. Munteanu
T. Ouisse
Straddle-Gate Transistor: a MOSFET in the Limit of Useful Field Effect	231	(16)
S. Tiwari
A. Kumar
J. J. Welser
COOL Multithreading in HTMT SPELL-1 Processors	247	(8)
M. Dorojevets
Optoelectronics and Photonics
Overview of the Optoelectronics Sessions and Chapter	255	(16)
J. C. Campbell
P. D. Dapkus
Role of Dislocations in InGaN-Based LEDs and Laser Diodes	271	(10)
S. Nakamura
Distributed Balanced Photodetector for RF Photonic Applications	281	(18)
M. S. Islam
T. Chau
T. Itoh
M. C. Wu
D. L. Sivco
A. Y. Cho
CAD Tools and Optical Device Models for Mixed Electronic/Photonic VLSI	299	(10)
J. Deng
M. S. Shur
T. A. Fjeldly
S. Baier
Novel Multiwavelength Modelocked Semiconductor Lasers: Physics and Applications	309	(10)
P. J. Delfyett
B. Mathason
I. Nitta
H. Shi
850-nm Vertical-Cavity Surface-Emitting Lasers on Si Substrates	319	(8)
Y. Zhou
Y. Xiong
Y.-H. Lo
C. Ji
Z. H. Zhu
S. A. Bashar
A. A. Allerman
T. Hargett
R. Sieg
K. D. Choquette
High Speed Resonant-Cavity InGaAs/InAlAs Avalanche Photodiodes	327	(12)
J. C. Campbell
H. Nie
C. Lenox
G. Kinsey
P. Yuan
A. L. Holmes, Jr.
B. G. Streetman
Microcavities, Photonic Crystals and Semiconductors: From Basic Physics to Applications in Light Emitters	339	(16)
C. Weisbuch
H. Benisty
R. Houdre
Advanced Semiconductor Lasers in the 3-10 μm Wavelength Range	355	(20)
M. Razeghi
Heterodimensional Contacts and Optical Detectors	375	(12)
B. Nabet
F. Castro
A. Anwar
A. Cola
Photonic Crystal Nanocavity Lasers	387	(6)
A. Scherer
O. Painter
A. Husain
J. Vuckovic
P. D. Dapkus
J. O'Brien
High Frequency Circuits Based on GaAs-PHEMT Technology for Modern Sensor and Communication Systems	393
M. Schlechtweg