Frontiers in Electronics : Proceedings of the WOFE-04

by Iwai, H.; Nishi, Y.; Shur, M. S.; Wong, H.

• ISBN13: 9789812568847
• ISBN10: 9812568840
• Format: Hardcover
• Copyright: 2006-08-10
• Publisher: World Scientific Pub Co Inc

Summary

Frontiers in Electronics reports on the most recent developments and future trends in the electronics and photonics industry. The issues address CMOS, SOI and wide band gap semiconductor technology, terahertz technology, and bioelectronics, providing a unique interdisciplinary overview of the key emerging issues. This volume accurately reflects the recent research and development trends: from pure research to research and development; and its contributors are leading experts in microelectronics, nanoelectronics, and nanophotonics from academia, industry, and government agencies.

Table of Contents

Are we at the end of CMOS scaling?	p. 3
3D size effects in advanced SOI devices	p. 9
Frontiers of nano-bio system	p. 31
Challenges for future semiconductor manufacturing	p. 43
Nanoelectronics - opportunities and challenges	p. 83
Asymmetric tunneling source MOSFETS : a novel device solution for sub-100nm CMOS technology	p. 95
Analysis of the effects of strain in ultra-thin SOI MOS devices	p. 105
Device simulation demands of upcoming microelectronics devices	p. 115
SON (silicon on nothing) platform for ULSI era : technology & devices	p. 137
Highly scaled CMOS device technologies with new structures and new materials	p. 147
Performance limitations of Si CMOS and alternatives for nanoelectronics	p. 175
CMOS devices architectures and technology innovations for the nanoelectronics era	p. 193
Novel dielectric materials for future transistor generations	p. 221
Bond strain and defects at Si-Si[subscript 2] and dielectric interfaces in high-k gate stacks	p. 241
Conduction band-edge states associated with removal of d-state degeneracies by the static Jahn-Teller effect	p. 263
Advanced cooling technologies for microprocessors	p. 301
A new approach to characterize and predict lifetime of deep-submicron NMOS devices	p. 315
Undoped body symmetric double gate MOSFET modeling	p. 325
Study of the gate insulator/silicon interface utilizing soft and hard X-ray photoelectron spectroscopy at SPring-8	p. 353
Deformable electronic surfaces	p. 365
Current issues and future prospects of lithography	p. 375
A theoretical study of point defects in Zirconia - silicon interfaces	p. 389
Elastomeric interconnects	p. 397
On the possibility of an intersubband laser in silicon-on-insulator	p. 411
Toward ultra-low power III-V quantum large scale integrated circuits for ubiquitous network era	p. 421
Ballistic electron acceleration negative-differential-conductivity devices	p. 437
Current instability and plasma wave generation in ungated two dimensional electron layers	p. 443
High-power switching using III-nitride metal-oxide-semiconductor heterostructures	p. 455
Recent progress on GaN-based electron devices	p. 469
Advancements in nanoelectronic SONOS nonvolatile semiconductor memory (NVSM) devices and technology	p. 479
A quantum dot microcavity terahertz laser	p. 503
The growth and characterization of room temperature ferromagnetic wideband-gap materials for spintronic applications	p. 515
Enhancing power electronic devices with wide bandgap semiconductors	p. 545
Feasibility of an optical frequency modulation system for free-space optical communications	p. 559
Recent development of Sb-based phototransistors in the 0.9- to 2.20-[mu]m wavelength range for applications to laser remote sensing	p. 567
Ultra violet detection sensors	p. 583
Tunable coherent radiation from terahertz to microwave by mixing two infrared frequencies in a 47-mm-long GaSe crystal	p. 589
High power type-I GaSb-based lasers	p. 597
Bio-molecular inspired electronic architectures for enhanced sensing of THz-frequency bio-signatures	p. 609
Spin dependent transport in quantum and classically configured devices	p. 639
Biologically-inspired chemically-directed self-assembly of semiconductor quantum-dot-based systems : phonon-hole scattering in DNA bound to DNA-quantum-dot complexes	p. 659
Terahertz signal transmission in molecular systems	p. 669
Simulating nanoscale semiconductor devices	p. 677
Recent progresses of application-oriented MEMS through industry-university collaboration	p. 693
Mixed-valence transition metal complex based integral architecture for molecular computing (I) : attachment of linker molecule to silicon (100) - 2x1 surface	p. 705
Silicon fibre technology development for wearable and ambient electronics applications	p. 713
Silicon-based integrated MOSFETs and MESFETs : a new paradigm for low power, mixed signal, monolithic systems using commercially available SOI	p. 723
Design, modeling, testing, and spice parameter extraction of DIMOS transistor in 4H-silicon carbide	p. 733
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