Gallium Nitride Materials and Devices III

by Morkoc, Hadis; Litton, Cole W.; Chyi, Jen-inn; Nanishi, Yasushi; Yoon, Euijoon

• ISBN13: 9780819470690
• ISBN10: 0819470694
• Format: Paperback
• Copyright: 2008-03-07
• Publisher: Society of Photo Optical

Summary

Proceedings of SPIE present the original research papers presented at SPIE conferences and other high-quality conferences in the broad-ranging fields of optics and photonics. These books provide prompt access to the latest innovations in research and technology in their respective fields. Proceedings of SPIE are among the most cited references in patent literature.

Table of Contents

The role of anisotropy for defect properties in a-plane GaN

A thick GaN growth using GaN/Sl(111) template by hydride vapor phase epitaxy (HVPE)

Modeling and experimental analysis of RPCVD based nitride film growth

Epitaxial lateral overgrowth of GaN on AlGaN/(111)Si micropillar array fabricated by polystyrene microsphere lithography

Nanopatterning and selective area epitaxy of GaN on Si substrate

Investigation of charge trapping at the oxide/semiconductor interface for MBE-grown GaN films

Defect and emission distributions in bulk GaN grown in polar and nonpolar directions: a comparative analysis

Photoluminescence study of near-surface GaN/AIN superlattices

Dynamics of intervalley transitions and propagation of coherent acoustic phonons in GaN single crystals studied by femtosecond pump-probe spectroscopy

Band coupling model of electron and hole mediated ferromagnetism in semiconductors: the case of GaN

Spin-orbit coupling in AIGaN/AIN/GaN heterostructures with a polarization induced two-dimensional electron gas

Structural defects and degradation of high-power pure-blue GaN-based laser diodes

Degradation modes of high-power InGaN/GaN laser diodes on low-defect GaN substrates

16 nm tuning range of blue InGaN laser diodes achieved by 200 K temperature increase

Why InGaN laser-diode degradation is accompanied by the improvement of its thermal stability

AIN/GaN-superlattice structures for the fabrication of intersubband detectors in the telecom wavelength range

Optimization of semipolar GaInN/GaN blue/green light emitting diode structures on {1-101} GaN side facets

RGB LED with smart control in the backlight and lighting

Highly reliable and bright GaN vertical LED on metal alloy substrate using corrugated pyramid shaped surface technology

High-power GaN LED chip with low thermal resistance

On chip surge protection for GaN-power LEDs by ZnO thin film varistor

Recent status of white LEDs and nitride LDs

True-blue InGaN laser for pico size projectors

Investigation of cross-sectional potential distribution in GaN-based field effect transistors by Kelvin probe force microscopy

III-nitride based deep ultraviolet light sources

AZO films with Al nano-particles to improve the light extraction efficiency of GaN-based light-emitting diodes

InGaN MQW green LEDs using p-InGaN and p-InGaN/p-GaN superlattices as p-type layers

Highly efficient InGaN/GaN LEDs with double-sided textured surfaces and omni-directional mirror structure

Development of UV-photocathodes using GaN film on Si substrate

1/f noise in nitride-based spintronic devices

Reliability modeling of high voltage AlGaN/GaN and GaAs field-effect transistors

Progress in GaN device performances and reliability

High temperature performance measurement and analysis of GaN HEMTs

Use of quantum 1/f noise formulas in the reliability characterization of nitride-based heterostructures

Millimeter-wave GaN HFET technology

Status of GaN HEMT performance and reliability

Piezoelectric quantum 1/f noise in nitride-based heterostructures

Recent progress of GaN electronic devices for wireless communication system

Al[subscript x]In[subscript 1-x]N/GaN heterostructure field effect transistors

GaN Schottky barrier and metal-semiconductor-metal photodetectors with in sifu SiN[subscript x] nano-network

Comparative study of electroluminescence efficiency of blue (In,Ga)N and red GaAs quantum-well diodes

Infrared reflectance of optical phonon modes in AlGaN epitaxial layers grown on sapphire substrates

AlGaN/GaN multiple quantum wells grown by atomic layer deposition

AlGaN/SiC heterojunction bipolar transistor

Epitaxial lateral overgrowth of (1100) m-plane GaN on m-plane 6H-SiC by metalorganic chemical vapor deposition

Modification of the anomalous V-shaped and S-shaped temperature dependent photon energy in Al[subscript x]Ga[subscript 1-x]N (0

Comparative study of deep levels in GaN grown on different templates

Evolution of surface morphology of polar and nonpolar GaN thin films during photoelectrochemical etching

Comparison of various gate dielectrics on the performance of AlGaN/GaN HFETS

Optical properties of polar, nonpolar, and semipolar InGaN/GaN multiple quantum wells on sapphire

Characterization of low-cost organic phosphor for white light-emitting diode

Author Index

Table of Contents provided by Blackwell. All Rights Reserved.