Gan and Related Materials II

by Pearton; Stephen J.

• ISBN13: 9789056996864
• ISBN10: 905699686X
• Edition: 2nd
• Format: Nonspecific Binding
• Copyright: 2000-10-31
• Publisher: CRC Press

Summary

The first GaN and Related Materials covered topics such as a historical survey of past research, optical electrical and microstructural characterization, theory of defects, bulk crystal growth, and performance of electronic and photonic devices. This new volume updates old research where warranted and explores new areas such as UV detectors, microwave electronics, and Er-doping. This unique follow-up features contributions from leading experts that cover the full spectrum of growth.

Table of Contents

About the Series	vii
Introduction	ix
Laser Diodes	1	(46)
S. Nakamura
GaN and AlGaN Devices: Field Effect Transistors and Photodetectors	47	(46)
M. S. Shur
M. Asif Khan
Growth and Doping of Defects in III-Nitrides	93	(80)
G. Popovici
H. Morkoc
Structural and Electronic Properties of AlGaN	173	(62)
A. Y. Polyakov
Theory of Laser Gain in Group III-Nitride Quantum Wells	235	(28)
W. W. Chow
S. W. Koch
Electronic and Optical Properties of Bulk and QW Structures	263	(42)
T. Uenoyama
M. Suzuki
Materials Theory Based Modeling of GaN Devices	305	(56)
K. F. Brennan
J. Kolnik
I. H. Oguzman
E. Bellotti
M. Farahmand
P. P. Ruden
R. Wang
J. D. Albrecht
Erbium Doping of III-V Nitrides	361	(26)
J. M. Zavada
Novel Device Applications for III-Nitrides	387	(24)
C. R. Abernathy
F. Ren
Thermodynamic and Electronic Properties of GaN and Related Alloys	411	(34)
M. A. Berding
M. van Schilfgaarde
A. Sher
GaN Quantum Dots	445	(30)
S. Tanaka
P. Ramvall
GaN Device Processing	475	(66)
S. J. Pearton
Contacts to GaN	541	(26)
S. E. Mohney
S. S. Lau
Ion Implantation Advances in Group III-Nitride Semiconductors	567	(34)
J. C. Zolper
Inductively Coupled Plasma Etching of III-V Nitrides	601	(62)
R. J. Shul
Low Energy Electron Enhanced Etching (LE4) of III-N Materials	663	(14)
H. P. Gillis
K. P. Martin
D. A. Choutov
Index	677