Impurities in Semiconductors: Solubility, Migration and Interactions

by Fistul; Victor I.

• ISBN13: 9780415308311
• ISBN10: 0415308313
• Format: Hardcover
• Copyright: 2004-01-27
• Publisher: CRC Press

Summary

Although there is a good deal of research concerning semiconductor impurities available, most publications on the subject are very specialized and very theoretical. Until now, the field lacked a text that described the current experimental data, applications, and theory concerning impurities in semiconductor physics.Impurities in Semiconductors: Solubility, Migration and Interactions explores the behavior of impurity atoms in semiconductors, integrating experimental data with theoretical interpretation. It presents the current literature on the state and behavior of impurities in semiconductors. The author explains the basic physics of hydrogen-like impurities to help you understand the properties imparted by these impurities. He also analyzes the macroscopic and microscopic mechanisms of the solubility, and migration of impurities and defects in the crystal lattice. In addition, the book presents a systematic analysis of different effects resulting from the interactions between impurities and other defects in the crystal lattices.This book brings to light work done in the former Soviet Union and highlights several impurities that have potential, but have not yet found widespread application. As such, it will be an invaluable reference for those working in different fields involving the use of electronic materials.

Table of Contents

Preface	ix
The Semiconductor-Impurity System	1	(20)
The Semiconductor Crystal as a Thermodynamic System	1	(8)
Thermodynamic Descriptions of Impurity Solubility	9	(8)
General Characteristics of Impurity Centers	17	(4)
References	19	(2)
Impurity Behavior in Semiconductors	21	(136)
Hydrogen-Like Impurities	21	(8)
Impurities with Partly Filled Electron Shells (d- and f-Impurities)	29	(20)
Amphoteric Impurities	49	(52)
General concepts	49	(3)
Carrier thermodynamics in semiconductors with amphoteric impurities	52	(4)
Amphoteric impurity distribution in elemental semiconductors	56	(9)
Amphoteric impurity distribution in semiconductor compounds	65	(5)
Data on amphoteric impurity states and behavior	70	(13)
Amphoteric excitons bound by d-impurities	83	(2)
Dissociative amphoteric impurities	85	(5)
Cation--anion amphoteric impurities in semiconductor compounds	90	(11)
Isovalent Impurities	101	(33)
General concepts	101	(7)
Empirical models of isovalent impurities	108	(14)
Physicochemical behavior of the host-IVI system	122	(1)
Possible mechanisms of the isovalent impurity effect	123	(3)
Isovalent doping effects	126	(8)
Volatile Impurities	134	(23)
Hydrogen	134	(1)
Oxygen	135	(10)
Carbon	145	(1)
Nitrogen	146	(1)
References	146	(11)
Impurity Solubility in Semiconductors (A Macroscopic Approach)	157	(42)
Retrograde Solubility of Impurities	157	(4)
Solubility of Hydrogen-Like Impurity Atoms in Germanium and Silicon	161	(7)
Hydrogen-Like Impurity Solubility in AIIIBV Compounds	168	(2)
Solubility of Deep Impurities	170	(9)
Solubility of AIV semiconductors	170	(8)
Solubility in semiconductor compounds	178	(1)
Solubility of Amphoteric Impurities	179	(20)
A thermodynamic analysis	179	(9)
Solubility of dissociative amphoteric impurities	188	(6)
Solubility of cation-anion impurities in semiconductor compounds	194	(1)
References	195	(4)
Microscopic Analysis of Impurity Solubility in Semiconductors	199	(42)
Dissolution Enthalpy Calculation by Weisser's Method	199	(9)
Site solubility	199	(3)
Interstitial solubility	202	(6)
Dissolution Enthalpy in the Pseudo-Alloy Model	208	(1)
Weisser's Modified Solubility Theory	209	(14)
Interstitial d-atom solubility	209	(8)
Site solubility of d-atoms	217	(6)
Solubility of Interstitial f-Atoms in Silicon	223	(3)
On Solubility Theory for Semiconductor Compounds	226	(2)
Comparison with Experimental Data	228	(3)
Quantum Chemical Calculation of Dissolution Enthalpy	231	(10)
Formulation of the quantum chemical problem	231	(5)
The dissolution model for a substitutional impurity	236	(1)
Quantum chemical calculations of impurity solubility	236	(1)
Perspectives of the quantum chemical method	237	(1)
References	238	(3)
Impurity Interactions in Semiconductors	241	(28)
Types of Impurity Interactions	241	(2)
Statistical Interaction	243	(6)
Configuration entropy of a lattice with NB sites and NVB vacancies	245	(1)
A lattice with several defect types	245	(1)
A lattice with structural elements in several positions	246	(1)
The arrangement of complexes	246	(1)
The arrangement of electrons and holes	247	(2)
Charge Interaction	249	(1)
Potential Interaction	250	(6)
Defect Interaction in a Regular Approximation	256	(3)
Interaction Leading to Complexation	259	(1)
Defect Ionization in Solids	260	(9)
References	267	(2)
Associations of Impurity Atoms	269	(50)
Ion Pairs	269	(9)
Point ions	270	(1)
Ions with a fixed radius	270	(6)
Ion pairing manifestation in semiconductor properties	276	(2)
Polytropic Impurities	278	(7)
Complexation Thermodynamics in a Semiconductor Compound	285	(9)
Impurity-Vacancy Complexes in AIIIBV Compounds	294	(3)
Impurity-Vacancy Complexes in Silicon	297	(1)
Impurity Syneresis	298	(7)
Combined Complexation	305	(3)
Indirect Ion-Ion Interaction	308	(2)
Applied Aspects of Complexation	310	(9)
Deep center content versus growth temperature and free electron concentration	310	(2)
Homogeneity region width in AIIIBV compounds	312	(4)
References	316	(3)
Impurity Kinetics in Semiconductors	319	(50)
Impurity Migration Energy	319	(2)
Microscopic Theory of Impurity Kinetics	321	(14)
Dissociative Diffusion of Impurities	335	(6)
Kinetic Effects in Subsurface Layers	341	(10)
Diffusion Profiles of Interacting Impurities	351	(18)
General principles	351	(3)
Impurity interactions in terms of thermodynamics of irreversible processes	354	(4)
Impurity interactions in terms of a model approach	358	(4)
Diffusion theory for immobile complexes	362	(4)
References	366	(3)
Impurity Migration in the Formation of Mobile Complexes	369	(64)
Diatomic Complexes: Formation and Decomposition	369	(6)
Diffusion Model for Mobile Complexes	375	(9)
Solution of Diffusion Equations for Various Boundary Conditions	384	(34)
Sequential diffusion	385	(8)
Simultaneous diffusion	393	(10)
Interdiffusion	403	(6)
The allowance for the finite front thickness	409	(7)
The physics of impurity diffusion with interactions	416	(2)
Diffusion Theory Versus Experiment	418	(15)
Chemical diffusion of phosphorus into silicon	418	(9)
Radiation-stimulated P diffusion into uniformly O2-doped silicon	427	(4)
Fe redistribution in B and P diffusion-doped silicon	431	(1)
References	432	(1)
Index	433