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9789056992644

InP and Related Compounds: Materials, Applications and Devices

by ;
  • ISBN13:

    9789056992644

  • ISBN10:

    9056992643

  • Edition: 1st
  • Format: Hardcover
  • Copyright: 2000-08-08
  • Publisher: CRC Press

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Summary

InP is a key semiconductor for the production of optoelectronic and photonic devices. Its related compounds, such as InGaAsP alloy, have been realized as very important materials for communication in the 1.3 and 1.55 micron spectral regions. Furthermore, the applications on InP and related compounds have extended to other areas that include laser diodes, light emitting diodes, photodetectors, waveguides, photocathodes, solar cells, and many other applications. The topics presented in this book have been chosen to achieve a balance between the properties of bulk materials, doping, characterization, applications, and devices. This unique volume, featuring chapters written by experts in the field, provides a good starting point for those who are new to the subject and contains detailed results and in depth discussions for those who are experts in the field.

Table of Contents

About the Series ix
Foreword xi
Introduction
1(8)
M. O. Manasreh
Recent Technologies in InP Bulk Crystals
9(58)
O. oda
T. Fukui
R. Uchida
K. Kohiro
H. Kurita
K. Kainosho
S. Asahi
K. Suzuki
Semi-Insulating InP Substrates: Preparation, Thermal Treatment, Physical Properties and Homogeneity
67(64)
Roberto Fornari
Juan Jimenez
Epitaxial Semi-Insulating III-V Layers for Optoelectronic Device Fabrication
131(34)
S. Laurdudoss
D. Soderstrom
O. Kjebon
Electrical and Optical Properties of Hydrogen-Containing Indium Phosphide
165(36)
Bernard Pajot
Delta Doping of InP and Related Compounds
201(50)
Patricia L. de Souza
Growth Condition Dependencies of Optical Properties of Er in InP and Local Structures
251(62)
Yasufumi Fujiwara
Hironobu Ofuchi
Masao Tabuchi
Yoshikazu Takeda
Transport Properties of Modulation Doped GaInAs/InP Quantum Wells
313(68)
Peter Ramvall
Optical and Structural Properties of InAsP/(Ga)InP Multilayers on InP(0001): Strained-Layer Multiple Quantum Well Structures and Devices
381(78)
M. Beaudoin
P. Desjardins
R. Y. -F. Yip
R. A. Masut
Monolayer Scale Analysis of Heterostructures and Interfaces by X-Ray CTR Scattering and Interference
459(54)
Y. Takeda
M. Tabuchi
Characterization of Anomalous Lattice-Relaxation Process in InAsP/InGaAsP Strained Layer Superlattices by X-Ray Diffraction Measurements
513(56)
Kiichi Nakashima
Organometallic Vapor Phase and Droplet Heteroepitaxy of Quantum Structures
569(34)
Y. Nonogaki
Y. Fujiwara
Y. Takeda
Use of Photorefractive Effect to Form Optical Waveguide in InP
603(48)
S. A. Hawkins
M. Chauvet
G. J. Salamo
M. Segev
D. F. Bliss
G. Iseler
G. Bryant
Strained Pseudomorphic InGaAsP/GaAs Layers: Epitaxial Growth, Electronic Properties and Photocathode Applications
651(76)
V. L. Alperovich
Yu. B. Bolkhovityanov
S. I. Chikichev
A. S. Jaroshevich
A. G. Paulish
A S. Terekhov
InGaAsP/GaAs Quantum Well Lasers Grown by Metalorganic Chemical Vapor Deposition
727(60)
Luke J. Mawst
InGaP/GaAs Tandem Solar Cells
787(52)
Tatsuya Takamoto
Index 839

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