Ion Beam Processing of Materials and Deposition Processes of Protective Coatings: Proceedings of Symposium J on Correlated Effects in Atomic and Cluster Ion Bombardment and Implantation, Symposium C on Pushing the Limits of Ion beam

by Hemment, P. L. F.; Gyulai, J.; Simonton, R. B.; Yamada, I.; Thomas, J. P.; Thevenard, P.; Brown, W. L.; Barna, Peter B.; Pauleau, Y.; Wahl, G.

• ISBN13: 9780444824103
• ISBN10: 0444824103
• Format: Hardcover
• Copyright: 1996-07-01
• Publisher: Elsevier Science Ltd

Summary

Containing the proceedings of three symposia in the E-MRS series this book is divided into two parts. Part one is concerned with ion beam processing, a particularly powerful and versatile technology which can be used both to synthesise and modify materials, including metals, semiconductors, ceramics and dielectrics, with great precision and excellent control. Furthermore it also deals with the correlated effects in atomic and cluster ion bombardment and implantation.Part two deals with the deposition techniques, characterization and applications of advanced ceramic, metallic and polymeric coatings or thin films for surface protection against corrosion, erosion, abrasion, diffusion and for lubrication of contracting surfaces in relative motion.

Table of Contents

Editorial Symp. J.
Editorial Symp. C.
Sponsors
Molecule and cluster bombardment: energy loss, trajectories, and collision cascades	p. 1
Nonlinear transmission sputtering	p. 12
Molecular dynamics study of shock wave generation by cluster impact on solid targets	p. 16
Track formation in metals by electronic processes using atomic and cluster ions	p. 23
Atomic and cluster ion bombardment in the electronic stopping power regime: A thermal spike description	p. 26
Production, acceleration and diagnostics of high intensity beams	p. 30
Production, acceleration and diagnostics of molecular ions and ionized clusters	p. 39
Hyperthermal chemistry and cluster collisions	p. 48
A plasma desorption mass spectrometry study of cluster ion information from group IIA nitrates	p. 55
Sputtering of large size clusters from solids bombarded by high energy cluster ions and fullerenes	p. 59
Acceleration of clusters, collision induced charge exchange at MeV energies and applications for materials science	p. 64
The use of coincidence counting mass spectrometry to study the emission and metastable dissociation of cluster ions	p. 68
Secondary electron emission of solids by impact of molecular ions and clusters	p. 72
Secondary electron emission from thin carbon foils under hydrogen cluster impact	p. 79
SiO[subscript 2] film formation at room temperature by gas cluster ion beam oxidation	p. 83
Reactive accelerated cluster erosion (RACE) by ionized cluster beams	p. 86
Investigation of damage formation by gas cluster ion bombardment	p. 89
Preparation of C60 single crystalline thin film by ionized cluster beam deposition and ion implantation into single crystalline C60 thin film	p. 94
The computer simulation of energetic particle-solid interactions	p. 99
STM investigation of energetic carbon cluster ion penetration depth into HOPG	p. 105
Atomistic study of defect generation mechanisms in Mo/W superlattices	p. 109
Defect creation induced by GeV ions in MgO containing Na precipitates	p. 112
N[superscript +] ion implantation effects on microhardness and adhesion in TiO[subscript 2] films	p. 116
Conducting polymer synthesis via ion beam induced precursor conversion	p. 120
Processing and characterization of ferroelectric thin films by multi-ion-beam sputtering	p. 125
TED of boron in the presence of EOR defects: the use of the theory of Ostwald ripening to calculate Si-interstitial supersaturation in the vicinity of extrinsic defects	p. 129
Observation of vacancy clustering in FZ-Si crystals during in situ electron irradiation in a high voltage electron microscope	p. 133
The damage recovery and electrical activation of shallow boron implants in silicon: The effects of high energy implants	p. 139
The effect of dose rate on ion implanted impurity profiles in silicon	p. 144
Damage profiles in as-implanted silicon: fluence dependence	p. 148
Dynamic Monte Carlo simulation of nonlinear damage growth during ion implantation of crystalline silicon	p. 152
Molecular dynamics study of the fluence dependence of Si sputtering by 1 keV Ar[superscript +] ions	p. 156
Spectroscopic ellipsometry applied to the determination of an ion implantation depth profile	p. 160
Kinetics of impurity gettering on buried defects created by MeV argon implantation	p. 169
Influence of sample thickness on carrier lifetime modification induced by 4 MeV proton implantation in silicon	p. 173
Ultra-shallow junction formation in silicon using ion implantation	p. 177
The chemical factor and its influence on the formation of defect structures and their gettering properties in layers of silicon implanted with chemical-active ions	p. 184
Implanted buried layers and interfaces: Application in the new area of very- and ultra-high efficiency solar cells	p. 188
Ion implanted silicides studies by frequency noise level measurements	p. 192
The effect of rapid thermal treatments on the formation of shallow junctions by implanting boron and [actual symbol not reproducible] ions into (100) silicon through a protecting mask	p. 196
Submicron CoSi[subscript 2] structures fabricated by focused ion beam implantation and local flash lamp melting	p. 201
Structural defects in SIMOX	p. 206
Novel approach for synthesizing of nanometer-sized Si crystals in SiO[subscript 2] by ion implantation and their optical characterization	p. 214
Effect of the gas ambient on the intensity of the visible photoluminescence from Si microcrystallites in a SiO[subscript 2] matrix formed by ion implantation	p. 219
Self-structuring of buried SiO[subscript 2] precipitate layers during IBS: A computer simulation	p. 223
Improved characterization of fully-depleted SOI wafers by pseudo-MOS transistor	p. 228
Progress in Japanese frontier projects on ion beam processing of advanced materials	p. 233
Characteristics and peculiarities of surface processing by gas cluster ion beams	p. 242
Atomic level smoothing of CVD diamond films by gas cluster ion beam etching	p. 248
Design considerations for plasma immersion ion implantation systems	p. 252
Lateral implantation dose measurements of plasma immersion ion implanted non-planar samples	p. 255
Ion beam analysis of plasma immersion implanted silicon for solar cell fabrication	p. 259
Characterization of hydrogenated amorphous silicon prepared by ion beam assisted evaporation	p. 263
Beam scanning system for the uniformity of implanted doses in a large area	p. 267
Atomic scale investigation of surface modification induced by 215 MeV Ne irradiation on graphite	p. 270
Thin BN films obtained by dual-ion-beam sputtering: an FT-IR and . spectroscopic ellipsometry characterization	p. 275
Preparation of Al[subscript 2]O[subscript 3] films by a new CVD process combining plasma and accelerated ion beams	p. 280
Layer and interface analysis of ultra thin ion beam produced silicon nitride layers by NRA and TEM	p. 284
Structural, morphological, electrical and luminous properties of undoped micro/nanocrystalline silicon films deposited by ion-assisted beam deposition techniques	p. 289
Effects of ion irradiations on properties of polyphosphazene-silica composite films	p. 294
He implant-damage isolation of MOVPE grown GaAs/InGaP/InGaAsP layers	p. 298
Ion implantation induced damage in relaxed Si0.75Ge0.25	p. 301
A study of base contact formation in epitaxial Si/Si[subscript 0.88]Ge[subscript 0.12] HBT structures	p. 305
Structural studies of ion beam synthesised SiGe/Si heterostructures for HBT applications	p. 311
Radiation damage of 2 MeV Si ions in Si[subscript 0.75]Ge [subscript 0.25]: optical measurements and damage modelling	p. 316
Investigation of the damage induced by 200 keV Ge[superscript +] ion implantation in 6H-SiC	p. 321
Ion beam synthesis of [beta]-SiC at [actual symbol not reproducible] and structural characterization	p. 325
XTEM and IR absorption analysis of silicon carbide prepared by high temperature carbon implantation in silicon	p. 330
Ion beam assisted recrystallization of SiC/Si structures	p. 334
Ion beam synthesis by tungsten-implantation into 6H-silicon carbide	p. 338
Modification of magnetron sputtered a-Si[subscript 1-x]C[subscript x]:H films by implantation of Ge[superscript +]	p. 342
Author index	p. 349
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