What is included with this book?
Preface | p. VII |
Objectives | p. vii |
Topics and use of the book | p. viii |
Acknowledgements | p. ix |
An Environment of Challenges | p. 1 |
Overview | p. 1 |
A history of modern electronic devices | p. 2 |
An issue of scale | p. 7 |
Defining electronic materials | p. 11 |
Purity | p. 13 |
Performance | p. 14 |
Summary points | p. 17 |
Homework problems | p. 18 |
Suggested readings & references | p. 19 |
The Physics of Solids | p. 21 |
Electronic band structures of solids | p. 21 |
Free electrons in solids | p. 23 |
Free electrons in a periodic potential | p. 24 |
Nearly free electrons | p. 25 |
Energy vs. momentum in 3d | p. 28 |
Electrons and holes | p. 32 |
Direct and indirect semiconductors | p. 35 |
Effective mass | p. 37 |
Density of states | p. 38 |
Intrinsic and extrinsic semiconductors | p. 40 |
Intrinsic semiconductors | p. 40 |
Extrinsic semiconductors | p. 42 |
Properties and the band structure | p. 44 |
Resistance, capacitance, and inductance | p. 44 |
Optical properties | p. 53 |
Thermal properties | p. 54 |
Quantum wells and confined carriers | p. 59 |
Summary points | p. 67 |
Homework | p. 69 |
Suggested readings & references | p. 71 |
Overview of Electronic Devices | p. 73 |
Diffusion and drift of carriers | p. 74 |
Chemical potential | p. 74 |
Carrier motion in a chemical potential gradient | p. 74 |
Simple diodes | p. 75 |
The junction contact potential | p. 77 |
Biased junctions | p. 81 |
Non-ideal diode behaviors | p. 88 |
Schottky barriers and ohmic contacts | p. 96 |
Ideal metal/semiconductor junctions | p. 96 |
Real schottky diodes | p. 101 |
Semiconductor heterojunctions | p. 102 |
Heterojunctions at equilibrium | p. 103 |
Heterojunctions as diodes | p. 109 |
Transistors | p. 111 |
Bipolar junction transistors | p. 111 |
Field-effect transistors | p. 114 |
Light-emitting devices | p. 119 |
Light-emitting diodes | p. 120 |
Laser diodes | p. 124 |
Summary | p. 134 |
Homework problems | p. 136 |
Suggested readings & references | p. 139 |
Aspects of Materials Science | p. 141 |
Structures of materials | p. 141 |
Crystal lattices | p. 142 |
The reciprocal lattice | p. 148 |
Basic thermodynamics of materials | p. 151 |
Phase diagrams | p. 155 |
Kinetics | p. 163 |
Reaction kinetics | p. 164 |
Nucleation | p. 166 |
Atomic transport | p. 170 |
Organic molecules | p. 172 |
Applications | p. 178 |
A basis for phase transformations | p. 178 |
Silicon crystal fabrication | p. 180 |
Rapid thermal processing | p. 187 |
Summary points | p. 189 |
Homework | p. 191 |
Suggested Readings and References | p. 194 |
Engineering Electronic Structure | p. 195 |
Linking atomic orbitals to bands | p. 196 |
Homopolar semiconductors | p. 197 |
Heteropolar compounds | p. 201 |
LCAO: from atomic orbitals to bands | p. 206 |
Common semiconductor energy bands | p. 215 |
Pressure and temperature dependence | p. 223 |
Applications | p. 226 |
Experimental band structures | p. 226 |
Gunn diodes | p. 228 |
Summary points | p. 232 |
Homework | p. 233 |
Suggested readings & references | p. 235 |
Semiconductor Alloys | p. 237 |
Alloy selection | p. 238 |
Overview | p. 238 |
Choosing alloy constituents | p. 241 |
Semiconductor alloy thermodynamics | p. 245 |
Regular solution theory revisited | p. 245 |
Ternary and quaternary solutions | p. 249 |
More mechanisms for alloy ordering | p. 252 |
Band gap bowing | p. 255 |
Binary and pseudobinary alloys | p. 255 |
Bowing in quaternary alloys | p. 260 |
Silicon-germanium alloys | p. 261 |
Structure and solubility | p. 262 |
Band gap engineering | p. 264 |
Alloying and carrier mobility | p. 267 |
Metastable semiconductor alloys | p. 268 |
Applications | p. 272 |
Heterojunction bipolar transistors | p. 272 |
Solar cells | p. 276 |
Summary points | p. 280 |
Homework | p. 282 |
Suggested readings & references | p. 285 |
Defects in Semiconductors | p. 289 |
Point defects | p. 289 |
Electronic states due to point defects | p. 291 |
Shallow levels | p. 295 |
Depth of intrinsic defects | p. 299 |
Ionization of defects | p. 300 |
Point defect densities | p. 302 |
Vacancies and dopant diffusivity | p. 308 |
Line defects | p. 311 |
Strain relief in heterostructures | p. 320 |
Energetics of strain relief | p. 322 |
Misfit dislocations | p. 328 |
Dislocation dynamics | p. 329 |
Reducing problems due to strain relief | p. 336 |
Planar and volume defects | p. 337 |
Twins and stacking faults | p. 337 |
Surfaces, interfaces, grain boundaries | p. 340 |
Volume defects | p. 343 |
SiC: a case study in stacking faults | p. 344 |
Summary points | p. 349 |
Homework | p. 352 |
Suggested readings & references | p. 355 |
Amorphous Semiconductors | p. 357 |
Structure and bonding | p. 358 |
Hydrogenated amorphous Si | p. 364 |
Deposition methods for a-Si | p. 366 |
Electronic properties | p. 367 |
Carrier transport and mobility | p. 367 |
Mobility measurements | p. 370 |
Doping | p. 372 |
Short-range order | p. 373 |
Optical properties | p. 374 |
Amorphous semiconductor Alloys | p. 377 |
Applications | p. 380 |
Thin film transistors | p. 380 |
Solar cells | p. 383 |
Summary points | p. 389 |
Homework | p. 391 |
Suggested readings and references | p. 392 |
Organic Semiconductors | p. 395 |
Materials overview | p. 395 |
Conjugated organic materials | p. 396 |
Ionized organic molecular structures | p. 403 |
Overview of organic devices | p. 407 |
Light emitting devices | p. 408 |
Transistors | p. 411 |
Molecular optoelectronic materials | p. 414 |
Molecular electron transporters | p. 415 |
Molecular hole transporters | p. 417 |
Dye molecules | p. 420 |
Molecules for thin film transistors | p. 427 |
Polymer optoelectronic organics | p. 428 |
Polymers for organic light emitting devices | p. 429 |
Polymers for transistors | p. 434 |
Contact to organic materials | p. 436 |
The cathode contact | p. 436 |
The anode contact | p. 439 |
Defects in organic materials | p. 440 |
Patterning organic materials | p. 442 |
Summary points | p. 446 |
Homework | p. 448 |
Suggested readings & references | p. 450 |
Thin Film Growth Processes | p. 455 |
Growth processes | p. 455 |
Gas phase transport | p. 460 |
Adsorption | p. 461 |
Desorption | p. 464 |
Sticking coefficient & surface coverage | p. 466 |
Nucleation & growth of thin films | p. 468 |
Surface diffusion | p. 474 |
Surface energy | p. 477 |
Morphology determined by nucleation | p. 481 |
Microstructure evolution | p. 484 |
Residual stress and adhesion | p. 485 |
Applications | p. 488 |
Adsorption, desorption and binding of H to Si | p. 488 |
Surface processes in GaAs epitaxial growth | p. 491 |
Summary points | p. 496 |
Homework problems | p. 499 |
Suggested readings & references | p. 502 |
Physical Vapor Deposition | p. 505 |
Evaporation | p. 505 |
Basic system geometries | p. 506 |
Sources | p. 508 |
Vapor pressure | p. 516 |
Monitoring deposition rates | p. 517 |
Simple rate monitoring methods | p. 518 |
Reflection high-energy electron diffraction | p. 520 |
Sputtering | p. 526 |
Sputtering yield | p. 527 |
Energetic particles | p. 533 |
Sputtering systems | p. 539 |
Glow discharge basics | p. 542 |
Fast particle modification of films | p. 553 |
Application | p. 560 |
Summary points | p. 564 |
Homework problems | p. 567 |
Suggested readings & references | p. 570 |
Chemical Vapor Deposition | p. 573 |
Overview | p. 574 |
CVD apparatus | p. 578 |
Gas flow in CVD reactors | p. 581 |
Reactant selection and design | p. 584 |
Stimulated CVD | p. 587 |
Selective CVD | p. 591 |
Atomic layer deposition | p. 594 |
Sample CVD and ALD processes | p. 597 |
Summary points | p. 604 |
Homework problems | p. 606 |
Suggested readings & references | p. 608 |
Appendix | p. 611 |
Useful constants | p. 611 |
Units | p. 612 |
Unit conversions | p. 612 |
Index | p. 615 |
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