Materials Science and Technology for Nonvolatile Memories

by Auciello, O.; Hong, S.; Soss, S.; Wouters, D.

• ISBN13: 9781605110417
• ISBN10: 1605110418
• Format: Hardcover
• Copyright: 2008-07-28
• Publisher: Cambridge Univ Pr

Summary

Nonvolatile memories are becoming an increasingly important electronic component, due to the ever-increasing need for data storage in multimedia and other mobile applications where electronic components are replacing magnetic hard drives. Today, Flash is the main nonvolatile memory technology, but further scaling of this technology will likely be restricted by important physical and material limitations. This explains recent increased research on new concepts for nonvolatile memories, for which new developments in materials science and technology, the focus of this book, are key. Chapters include Advanced Flash Memory which deals with solutions for scaled Flash memory, including the use of new high-k layers and nanocrystals. Resistive switching concepts are discussed in the Oxide Resistive Switching Memory and Organic Resistive Switching Memory chapters. More research on polymer memories are detailed in Nanoparticle-Based Organic Memory and Organic Ferroelectric Memory. Two chapters deal with New Phase Change Memory and Deposition Methods and Future Explorative Memory Concepts, including piezoelectric, ferroelectric and ferromagnetic concepts.

Table of Contents

Flash Memory Scaling: From Material Selection to Performance Improvement	p. 3
Realization of Hybrid Silicon Core/Silicon Nitride Shell Nanodots by LPCVD for NVM Application	p. 17
Impact of the High-Temperature Process Steps on the HfAlO Interpoly Dielectric Stacks for Nonvolatile Memory Applications	p. 23
Effect of Top Dielectric Morphology and Gate Material on the Performance of Nitride-based FLASH Memory Cells	p. 29
Relaxation Behavior and Breakdown Mechanisms of Nanocrystals Embedded Zr-doped HfO[subscript 2] High-k Thin Films for Nonvolatile Memories	p. 35
Simulation of Capacitance-Voltage Characteristics of Ultra-Thin Metal-Oxide-Semiconductor Structures with Embedded Nanocrystals	p. 43
Synthesis of Nickel Disilicide Nanocrystal Monolayers for Nonvolatile Memory Applications	p. 49
Using Thermal Oxidation and Rapid Thermal Annealing on Polycrystalline-SiGe for Ge Nanocrystals	p. 55
Nonvolatile Resistive Switching Characteristics of HfO[subscript 2] with Cu Doping	p. 63
Temperature Dependence of Electrical Properties of NiO Thin Films for Resistive Random Access Memory	p. 69
Substantial Reduction of Reset Current in CoO RRAM with Ta Bottom Electrode	p. 75
The Interfacial States Between Metal/Oxide and the RRAM-Part II	p. 81
Reproducible Electro-resistance Memory Effect in Ag/La[subscript 0.67]Sr[subscript 0.33]MnO[subscript 3] Thin Films	p. 89
Resistive Electrical Switching of Cu[superscript +] and Ag[superscript +] Based Metal-Organic Charge Transfer Complexes	p. 97
Molecular Conformation-Dependent Memory Effects in Non-Conjugated Polymers with Pendant Carbazole Moieties	p. 109
Dependence on Organic Thickness of Electrical Characteristics Behavior in Low Molecular Organic Nonvolatile Memory	p. 115
Current Conduction Mechanism for Low-Molecular Organic Nonvolatile Memory	p. 121
Imaging and Elemental Analysis of Polymer/Fullerene Nanocomposite Memory Devices	p. 129
Small Molecular Organic Nonvolatile Memory Fabricated with Ni Nanocrystals Embedded in Alq[subscript 3]	p. 135
Effect of Au Nanocrystals Embedded in Conductive Polymer on Nonvolatile Memory Window	p. 141
Process Optimization of Ni Nanocrystals Formation Using O[subscript 2] Plasma Oxidation to Fabricate Low-Molecular Organic Nonvolatile Memory	p. 147
Current Conduction Mechanism for Nonvolatile Memory Fabricated with Conductive Polymer Embedded Au Nanocrystals	p. 153
Organic Field Effect Transistor Using BaTiO[subscript 3]-Mn Doped and P(VDF-TrFE) for Nonvolatile Memory Application	p. 161
Fabrication and Characterization of Ferroelectric Polymer/TiO[subscript 2]/Al-doped ZnO Structures	p. 167
Fabrication and Electrical Studies of P(VDF/TrFE)(72/28) Copolymer Based Nonvolatile Memory Devices as a Function of Varying Device Structures	p. 173
Reversible Electrical Resistance Switching in GeSbTe Thin Films: An Electrolytic Approach without Amorphous-Crystalline Phase-Change	p. 181
CVD of Amorphous GeTe Thin Films	p. 187
Germanium ALD/CVD Precursors for Deposition of Ge/GeTe Films	p. 193
Concentric Metallic-Piezoelectric Microtube Arrays	p. 201
Ferroelectric and Electrical Properties of BaZrO[subscript 3] Doped Sr[subscript 0.8]Bi[subscript 2.2]Ta[subscript 2]O[subscript 9] Thin Films	p. 207
Stability of Larger Ferromagnetic Chain-of-Sphere Nanostructure Comprising Magnetic Vortices	p. 213
Author Index	p. 219
Subject Index	p. 221
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