Nanometer CMOS

by Liou; Juin J.

• ISBN13: 9789814241083
• ISBN10: 9814241083
• Format: Trade Book
• Copyright: 2010-02-28
• Publisher: Pan Stanford Publishing

Summary

This book gives a comprehensive overview of all the important issues concerning modern Si MOSFETs. It covers the principles of MOSFET operation, theory, scaling issues, and an in-depth discussion of nanometer MOSFETs. Book jacket.

Author Biography

Dr. Frank Schwierz is head of the RF & Nanoelectronics Research Group at Technische Universität (TU) Ilmenau, Germany.

Table of Contents

Preface	p. v
The Evolution of Silicon Electronics	p. 1
Introduction	p. 1
The Early Days of Semiconductor Electronics	p. 2
Moore's Law	p. 7
Further trends and the ITRS	p. 12
Improved MOSFET Designs	p. 20
MOSFETs for High-Frequency Operation?	p. 27
MOSFET Theory	p. 35
Introduction	p. 35
Different MOSFET Versions	p. 37
Definitions of Threshold Voltage	p. 42
MOS Fundamentals	p. 44
Conventional Two-Terminal MOS Structure	p. 45
Single-Gate and Double-Gate SOI MOS Structures	p. 66
An Approximated Sheet Concentration Versus Gate Voltage Relationship	p. 82
MOSFET Current — Voltage Characteristics	p. 87
Introduction	p. 87
Classical MOSFET Model	p. 87
Two-Region MOSFET Model	p. 91
Modified Two-Region Model	p. 93
Effective Mobility	p. 95
Scattering Model	p. 97
Comparison and Assessment of the Four Transistor Models	p. 104
Subthreshold Current	p. 106
Series Resistances	p. 108
Short-Channel Effects	p. 108
The Concept of Scale Lengths	p. 117
Nanoscale MOSFETs	p. 129
MOSFET Scaling Theory	p. 129
Constant-Field and Constant-Voltage Scaling	p. 129
Generalized Scaling Approaches	p. 134
Good Technology Rules	p. 136
Nanoscale MOSFET Concepts — An Overview	p. 137
Nanoscale Bulk MOSFETs	p. 142
Basic Structure	p. 142
Doping Profiles	p. 143
Mobility Enhancement Techniques	p. 150
Strained Silicon	p. 150
Hybrid-Orientation Technology	p. 161
High-k Dielectrics and Metal Gates	p. 163
Nanoscale Single-Gate SOI MOSFETs	p. 172
Nanoscale Multiple-Gate MOSFETs	p. 181
Double-Gate MOSFETs	p. 181
Tri-Gate MOSFETs and Gate-All-Around MOSFETs	p. 188
Nanowire MOSFETs	p. 194
MOSFETs with Alternative Channel Materials	p. 196
The Effect of Multiple Technology Boosters	p. 204
MOSFETs for RF Applications	p. 219
Introduction	p. 219
RF Transistor Figures of Merit	p. 221
Gains	p. 221
The Characteristic Frequencies fT and fT	p. 225
Minimum Noise Figure and Associated Gain	p. 227
Output Power and Power-Added Efficiency	p. 228
Small-Signal Equivalent Circuits	p. 228
RF MOSFET Design and Performance	p. 234
RF Small-Signal MOSFETs	p. 234
RF Power MOSFETs	p. 244
Comparison of RF CMOS and Competing RF Transistor Technologies	p. 252
Why are Si MOSFETs so Fast?	p. 258
Overview of Nanometer CMOS Technology	p. 273
Introduction	p. 273
Lithography	p. 278
Introduction	p. 278
Optical Lithography	p. 279
Extremely Ultraviolet Lithography (EUV)	p. 285
Electron Beam Lithography (E-Beam)	p. 286
Imprint Lithography	p. 286
Plasma Etching	p. 288
Thin Film Formation Techniques	p. 291
Overview	p. 291
Chemical Vapor Deposition (CVD)	p. 293
Metal-Organic Chemical Vapor Deposition (MOCVD)	p. 294
Molecular Beam Epitaxy (MBE)	p. 294
Atomic Layer Deposition (ALD)	p. 295
Metal Film Deposition	p. 297
Junction Formation	p. 298
Ion Implantation	p. 299
Plasma Doping	p. 300
Interconnects	p. 302
Summary	p. 303
Outlook	p. 307
Introduction	p. 307
Critical Scaling Issues	p. 307
Issues Related to Device Physics	p. 307
Power Consumption and Self-Heating	p. 310
Interconnect Delays	p. 312
Will There be a Mainstream Beyond-Scaling, Post-CMOS Technology?	p. 314
Frequently Used Symbols	p. 323
Physical Constants and Unit Conversions	p. 327
Important Properties of Si and SiO2	p. 329
Carrier Concentrations, Energy, and Potential	p. 331
Frequently Used Abbreviations	p. 335
Index	p. 337
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