Narrow Gap Semiconductors: Proceedings of the Eighth International Conference on Narrow Gap Semiconductors, Shanghai, China, 21-24 April 1997

by Shen, S. C.; Tang, D. Y.; Zheng, G. Z.; Bauer, G.

• ISBN13: 9789810233440
• ISBN10: 9810233442
• Format: Hardcover
• Copyright: 1998-03-01
• Publisher: WORLD SCIENTIFIC PUB CO INC

Summary

Contains contributions which were presented at the 8th International Conference on Narrow Gap Semiconductors which was held in Shanghai, China from April 21 to 24, 1997.

Table of Contents

Preface
Organizing Committee
Magnetic Field and Dimensionality Induced Population Effects in HgSe and HgSe:Fe	p. 1
Growth and in Situ Scanning Tunneling Microscopy Studies of IV-VI Semiconductors	p. 11
The Excess Carrier Life Times in MCT Heterostructures Grown by MBE	p. 12
A Study on the Interface of CdTe/HgCdTe Grown by MOCVD	p. 16
Electrical Properties of Room-temperature MBE CdTe/HgCdTe Interfaces	p. 20
The Conductance Mechanisms of Hg[subscript 0.53]Cd[subscript 0.47]Te/CdTe Interface	p. 24
Defects in MBE-Grown Layers of CdHgTe	p. 30
Influences of Optical Phonons on the Optoelectronic Transitions in a Hg[subscript 1-x]Mg[subscript x]Te Ternary Mixed Crystal	p. 34
Raman Study of CdHgTe MBE Layers	p. 38
Anomalous Absorption Spectra for Hg[subscript 1-x]Cd[subscript x]Te Epitaxial Films	p. 42
The Study on the Negative Differential Resistance and Surface States of Hg[subscript 1-x]Cd[subscript x]Te MIS Structures	p. 46
Variable-Magnetic-Field-Hall Effect Dependence in HgCdTe Grown by MBE	p. 52
Anomalously High Mobility in n-type HgCdTe	p. 56
Optical and Electrical Investigation on Fe Impurity Behavior in HgCdTe	p. 60
Surface Recombination Mechanisms in n-type Narrow Gap Mercury Cadmium Telluride	p. 64
Hg[subscript 1-x]Cd[subscript x]Te on Sapphire and Silicon Structures Grown by iso-VPE	p. 70
Electrical Properties of p-type HgZnTe Schottky Barrier Diode with Au and Al	p. 77
Growth and Annealing of Cd[subscript 1-y]Zn[subscript y]Te Crystal	p. 83
X-ray Double-Crystal Diffraction Studies of CdZnTe Substrate	p. 87
Weak Localization and Metal-to-Insulator Transition in PbEuTe	p. 93
Structural and Electronic Properties of Sandwiched HgSe-Quantum Wells	p. 97
MBE Growth of PbEuSe on CaF[subscript 2]/Si(111)	p. 101
Growth of InAs-Rich GaInAsSb Alloys by MOCVD	p. 105
Study of GaInAsSb Alloy on GaSb Substrate by Atomic Force Microscopy	p. 109
Anodic-Oxide-Induced Interdiffusion in GaAs/AlGaAs Quantum Wire Structure Grown on V-Grooved Substrate	p. 113
Preparation of Silicon Film for Visible Luminescence at Room Temperature	p. 119
STM Investigation on Fractal Characteristic of Silicon Film	p. 123
1.54[mu]m Photoluminescence of Erbium and Oxygen Codoped Silicon Grown by Molecular Beam Epitaxy	p. 127
China's Satellite Project for Earth Observation and Infrared Detection	p. 131
Recent Progress in Quantum Well Infrared Photodetectors and Focal Plane Arrays for LWIR Imaging Applications	p. 139
Recent Progress on Multicolor Quantum Well Infrared Photodetectors	p. 155
The Linear Photoconductor Arrays Based on HgCdTe Heterostructures Grown by MBE	p. 156
LWIR Focal Plane Array Based on MBE HgCdTe Films	p. 160
Multielement Deep Cooling Photosensitive Devices for Spectral Range up to 20 Microns Based on In-Doped PbSnTe Films for Space Research	p. 164
Optical and Electrical Properties of InAs/Ga[subscript 1-x]In[subscript x]Sh Photodiodes for Infrared Detection	p. 168
Structural and Photoelectric Studies on Double Barrier Quantum Well IR Detectors	p. 172
Normal-Incidence Absorption of n-type Step GaAlSb Quantum Well	p. 176
Theoretical Investigation of AlAs/AlGaAs X-valley Quantum-Well Normal-Incident Infrared Detectors	p. 180
Interband Cascade Light Emitting Devices Based on Type-II Quantum Wells	p. 184
Mid-Infrared Resonant-Cavity-Based Devices: Of Detectors and Emitters	p. 194
W Lasers for the Mid-IR	p. 204
Absorption and Refractive Index of PbSe/PbEuSe Multiquantum Well Laser	p. 214
Electron Raman Infrared Laser Based on Intersubband Transitions in Coupled Quantum Wells	p. 218
Laser Generation in AlGaAs/GaAs Light-Emitting Tunnel Diode Enhanced by Aperiodic-Superlattice Injectors	p. 223
Optoelectronic Devices from Indium Aluminium Antimonide and Mercury Cadmium Telluride	p. 227
Three-Terminal Superconductor-Semiconductor Devices	p. 238
Low-Dimensional Electron Transport and Device Applications of InAs Heterostructures	p. 248
Narrow-Gap Semiconductor Hall Sensors for Read-heads in Magnetic Recording	p. 249
Generation of Hypersonic Phonon Emission from THZ-Driven Two-Dimensional Electron Gases	p. 253
Magneto-tunnel Diode Based on Zero-Gap Semiconductors HgTc and Hg[subscript 0.9]Cd[subscript 0.1]Te	p. 257
Mercury Cadmium Telluride as Read-head Sensors for High-Density Magnetic Recording	p. 261
A Novel Way to Determine the Electrical Parameters for Two-Terminal Hg[subscript 1-x]Cd[subscript x]Te Device	p. 265
Coherent Anti-Stokes Raman Scattering in Diluted Magnetic IV-VI Epilayers and Superlattices	p. 269
High Field Cyclotron Resonance in GaSb and Effective Mass at the [Gamma] and L-points	p. 279
Spin and Depolarization Effects in InAs/AlSb Quantum Wells	p. 289
Phasecoherent Transport in PbTe Wide Parabolic Quantum Wells	p. 300
Edge Channel Dominated Magnetotransporf in PhTe Wide Parabolic Quantum Wells	p. 304
Landau Level Lifetimes in PbTe Wide Parabolic Quantum Wells	p. 308
Density Dependence of the Spin-Splitting of the Cyclotron Resonance in InAs/AlSb Quantum Wells	p. 312
LO-Phonon Bottleneck Effects in a Magnetically Confined InGaAs/InAlAs Triple Barrier Resonant Tunneling Diode	p. 316
Cyclotron Resonance of InAs[subscript 1-x]Sb[subscript x] Epilayers and InAs/InAs[subscript 1-x]Sb[subscript x] Superlattices	p. 320
An Investigation of Spin-Orbit Interactions and Conduction Band Nonparabolicity in Gated InAs/GaSb Quantum Well Structures	p. 324
Study of Cyclotron Resonance and Magneto-Photoluminescence of n-type Modulation-Doped InGaAs Quantum Well Layers and Their Characterizations	p. 328
Magneto-Optical Study on Electron Gases Populating Two Subbands in Pseudomorphic InGaAs/InAlAs Graded Heterostructures	p. 332
Semiconductor Inter-Subband and Interband Lifetime Studies with Felix	p. 336
Magnetic Interactions in Sn[subscript 1-x]Gd[subscript x]Te Semimagnetic Semiconductor	p. 345
A Study on the Anodic Oxide Films of Passivated Hg[subscript 1-x]Zn[subscript x]Te Using Raman Scattering and C-V Analysis	p. 354
Recombination in Pb[subscript 1-x]Sn[subscript x]Te [In] at low Temperatures	p. 361
Photocurrent Oscillations in Pb[subscript 1-x]Sn[subscript x]Te [In] Films	p. 365
Investigation of Intersubband Transitions in GaAs/GaAlAs Multi-Quantum Wells under Hydrostatic Pressure	p. 369
The Quantum Interference on the States above AlGaAs Quantum Step	p. 373
Photoluminescence of InAs/GaAs Submonolayer Structure under Hydrostatic Pressure	p. 379
In-situ Optical Study on Electron Energy Level in a Surface Si [Delta]-Doping Layer on GaAs(001)	p. 383
Photoconductivity Spectroscopy of InAs/AlSb Quantum Wells	p. 387
Studies on Transport Properties of 3D and 2D Systems of Narrow-Gap Semiconductors by Capacitance Spectroscopy	p. 391
Electric-field and Magnetic-field Dependence of Intersubband Relaxation Time in Wide Quantum Wells	p. 395
In-situ PR Study of AlGaAs/GaAs Surface QW	p. 399
Miniband Transport in Doped GaAs Superlattices Driven by Intense Far Infrared Radiations	p. 403
Breakdown of Negative Differential Velocity in Hole Miniband Transport of GaAs-based Superlattices Due to Energy-Band Mixing	p. 407
The Infrared Vibrational Modes of the Soliton-Antisoliton Pair in Semiconducting Polymers	p. 411
Influence of an In-Plane Electric Filed on Population Inversion Among Electronic Subbands in Optically Pumped Semiconductor Quantum Well Structures	p. 415
Growth and Characterization of InAs Quantum Dots	p. 419
Self-Assembled InAs Quantum Boxes: Growth, Intrinsic Properties, Potential Applications	p. 435
Self-Organized Germanium Quantum Dots Grown by Molecular Beam Epitaxy on Silicon	p. 436
Novel Ge Self-organized Quantum Dots in Si	p. 440
Vertically Coupled Multilayers of Self-Assembled InAs Quantum Dots	p. 446
High Density Self-Assembled InSb/AlGaSb Quantum Dot Growth Using Molecular Beam Epitaxy	p. 450
The Self-Organized In[subscript 0.24]Ga[subscript 0.76]As Quantum Dots Grown by Migration Enhanced Expitaxy	p. 454
Annealing Behavior of Self-Assembled InAs Quantum Dots in a GaAs Matrix	p. 458
Photoluminescence Study on Self-Organized InAs Quantum Dots Structure	p. 462
Author Index	p. 467
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