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9781574446968

Non-equilibrium Dynamics of Semiconductors And Nanostructures

by ;
  • ISBN13:

    9781574446968

  • ISBN10:

    1574446967

  • Format: Hardcover
  • Copyright: 2005-11-01
  • Publisher: CRC Press

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Summary

The advent of the femto-second laser has enabled us to observe phenomena at the atomic timescale. One area to reap enormous benefits from this ability is ultrafast dynamics. Collecting the works of leading experts from around the globe, Non-Equilibrium Dynamics of Semiconductors and Nanostructures surveys recent developments in a variety of areas in ultrafast dynamics.In eight authoritative chapters illustrated by more than 150 figures, this book spans a broad range of new techniques and advances. It begins with a review of spin dynamics in a high-mobility two-dimensional electron gas, followed by the generation, propagation, and nonlinear properties of high-amplitude, ultrashort strain solitons in solids. The discussion then turns to nonlinear optical properties of nanoscale artificial dielectrics, optical properties of GaN self-assembled quantum dots, and optical studies of carrier dynamics and non-equilibrium optical phonons in nitride-based semiconductors. Rounding out the presentation, the book examines ultrafast non-equilibrium electron dynamics in metal nanoparticles, monochromatic acoustic phonons in GaAs, and electromagnetically induced transparency in semiconductor quantum wells.With its pedagogical approach and practical, up-to-date coverage, Non-Equilibrium Dynamics of Semiconductors and Nanostructures allows you to easily put the material into practice, whether you are a seasoned researcher or new to the field.

Table of Contents

Chapter 1 Spin Evolution in a High-Mobility, Two-Dimensional Electron Gas 1(14)
Richard T. Harley
1.1 Introduction
1(1)
1.2 Review of Theoretical Ideas on Spin-Dynamics in a 2DEG
2(4)
1.2.1 Mechanisms in III–V Semiconductors
2(2)
1.2.2 Electron Spin Dynamics in the Strong Scattering Regime
4(2)
1.2.3 Collision-Free Regime
6(1)
1.3 Experimental Investigation of Electron Spin-Dynamics in a 2DEG
6(6)
1.3.1 Samples and Experimental Techniques
6(4)
1.3.2 Experimental Results
10(2)
1.4 Conclusions
12(1)
References
13(2)
Chapter 2 High-Amplitude, Ultrashort Strain Solitons in Solids 15(34)
Otto L. Muskens and Jaap I. Dijkhuis
2.1 Introduction
15(5)
2.1.1 Historical Perspective
16(1)
2.1.2 Nano-Ultrasonics
17(1)
2.1.3 Strain Solitons and Shock Waves
18(2)
2.2 Theory of Strain Solitons
20(9)
2.2.1 Nonlinear Elasticity
20(3)
2.2.2 One-Dimensional Propagation
23(1)
2.2.3 Soliton Trains
24(2)
2.2.4 Shock Wave Development
26(2)
2.2.5 Discrete and Multidimensional Models
28(1)
2.3 Simulations
29(5)
2.3.1 Soliton Trains in Sapphire
29(2)
2.3.2 Diffraction and Soliton Train Formation
31(1)
2.3.3 Stability of Individual Solitons
32(2)
2.4 Brillouin-Scattering Experiments
34(9)
2.4.1 Introduction
34(1)
2.4.2 Setup
35(1)
2.4.3 Transition from Shock Waves to Soliton Trains
36(3)
2.4.4 Diffraction and the Formation of Solitons
39(4)
2.5 Conclusions and Prospects
43(2)
Acknowledgments
45(1)
References
45(4)
Chapter 3 Nonlinear Optical Properties of Artificial Dielectrics in the Nano-Scale 49(20)
H. Grebel
3.1 Preface
49(1)
3.2 Introduction
50(3)
3.3 Theoretical Considerations
53(8)
3.4 Experiments and Results
61(5)
3.5 Discussion
66(1)
3.6 Conclusions
67(1)
References
67(2)
Chapter 4 Optical Properties of Hexagonal and Cubic GaN Self-Assembled Quantum Dots 69(32)
Yong-Hoon Cho and Le Si Dang
4.1 Introduction
70(1)
4.2 Physical Properties of GaN Self-Assembled Quantum Dots
71(2)
4.3 Growth of Hexagonal and Cubic GaN Self-Assembled Quantum Dots
73(2)
4.3.1 MBE Growth of Hexagonal Phase GaN Self-Assembled Quantum Dots
73(1)
4.3.2 MOCVD Growth of Hexagonal Phase (In)GaN Self-Assembled Quantum Dots
74(1)
4.3.3 Growth of Cubic Phase GaN Self-Assembled Quantum Dots
74(1)
4.4 Optical Properties of GaN Self-Assembled Quantum Dots
75(5)
4.4.1 Optical Properties of Hexagonal and Cubic GaN Self-Assembled Quantum Dots
75(4)
4.4.2 Optical Properties of GaN Quantum Dots Doped with Rare Earth Materials
79(1)
4.5 Time- and Space-Resolved Optical Studies on GaN Self-Assembled Quantum Dots
80(7)
4.5.1 Time-Resolved Optical Properties of GaN Self-Assembled Quantum Dots
80(2)
4.5.2 Space-Resolved Optical Properties of GaN Self-Assembled Quantum Dots
82(2)
4.5.3 Single Quantum Dot Spectroscopy Using Micro-PL and Micro-CL on GaN-Based Quantum Dots
84(3)
4.6 Prospects of GaN Self-Assembled Quantum Dots
87(4)
4.6.1 Growth Challenges: Control of Quantum Dot Nucleation Sites and Sizes
87(2)
4.6.2 Control of Electronic Properties
89(1)
4.6.3 UV Bipolar Opto-Electronic Devices: Interband Transitions in GaN Quantum Dots
89(1)
4.6.4 IR Unipolar Opto-Electronic Devices: Intersubband Transitions in GaN Quantum Dots
90(1)
4.6.5 White LEDs: Self-Assembled GaN Quantum Dots Doped with Rare Earth Materials
91(1)
4.7 Conclusion
91(1)
4.8 Acknowledgments
92(1)
References
92(9)
Chapter 5 Ultrafast Non-Equilibrium Electron Dynamics in Metal Nanoparticles 101(42)
Fabrice Vallée
5.1 Introduction
101(3)
5.2 Optical Properties of Metal Nanoparticles
104(7)
5.2.1 Metal Nanoparticle Optical Response
104(2)
5.2.2 Dielectric Function of a Metal Nanoparticle
106(3)
5.2.3 Surface Plasmon Resonance
109(1)
5.2.4 Nonlinear Optical Response: Sample Optical Property Changes
110(1)
5.3 Optical Creation of Non-Equilibrium Electrons
111(5)
5.3.1 Coherent Electron-Light Coupling
111(4)
5.3.2 Non-Equilibrium Electron Gas Energy
115(1)
5.4 Non-Equilibrium Electron Kinetics
116(9)
5.4.1 Energy Relaxation Kinetics of Non-Equilibrium Electrons
116(2)
5.4.2 Optical Probing of the Non-Equilibrium Electron Kinetics
118(7)
5.4.3 Time-Dependent Optical Response
125(1)
5.5 Electron-Electron Energy Exchanges
125(5)
5.6 Electron-Lattice Energy Exchanges
130(5)
5.7 Non-Equilibrium Electron-Lattice Energy Exchanges
135(1)
5.8 Conclusion
136(1)
Acknowledgments
137(1)
References
138(5)
Chapter 6 Generation and Propagation of Monochromatic Acoustic Phonons in Gallium Arsenide 143(36)
Anthony J. Kent and Nicola M. Stanton
6.1 Introduction and Background
143(3)
6.2 Basic Properties of Semiconductor Superlattices
146(5)
6.3 Experimental Details
151(5)
6.4 Experimental Results: Introduction
156(11)
6.4.1 Time of Flight Techniques: Detecting Propagating Phonons Following Ultrafast Excitation
156(3)
6.4.2 Determining the Monochromatic Nature of the Propagating Modes
159(4)
6.4.3 Resolving Phonon Modes: Transverse Mode Enhancement
163(3)
6.4.4 Studying the Transverse Contribution: (311) and (211) Substrates
166(1)
6.5 Demonstrating Phonon Optics: Measuring the Mean Free Path of Terahertz (THz) Phonons
167(3)
6.6 Other Materials: Gallium Nitride and Its Alloys
170(3)
6.7 Summary and Outlook
173(1)
References
174(5)
Chapter 7 Optical Studies of Carrier Dynamics and Non-Equilibrium Optical Phonons in Nitride-Based Semiconductors 179(36)
K.T. Tsen
7.1 Introduction
180(1)
7.2 Experimental Approach, Samples, and Experimental Technique
181(11)
7.2.1 Experimental Approach
181(8)
7.2.1.1 Raman Spectroscopy in Semiconductors
181(8)
7.2.2 General Considerations
189(2)
7.2.2.1 Light Source
189(1)
7.2.2.2 Spectrometer
189(1)
7.2.2.3 Detector and Photon-Counting Electronics
190(1)
7.2.3 Samples and Experimental Technique
191(1)
7.3 Experimental Results
192(18)
7.3.1 Experimental Results for Carrier Dynamics in InxGa1-xAs1-yNy: Analysis and Discussion
192(3)
7.3.2 Experimental Results for Transient Carrier Transport in InxGa1-xN/GaN
195(1)
7.3.3 Experimental Results for Transient Carrier Transport in InN/GaN: Analysis and Discussion
196(6)
7.3.4 Experimental Results on Non-Equilibrium Longitudinal Optical Phonons in InN: Analysis and Discussion
202(4)
7.3.5 Experimental Results on the Observation of Large Electron Drift Velocities in InN Thick Film Grown on GaN
206(4)
7.4 Conclusion
210(1)
Acknowledgments
210(1)
References
210(5)
Chapter 8 Electromagnetically Induced Transparency in Semiconductor Quantum Wells 215(36)
Mark C. Phillips and Hailin Wang
8.1 Introduction
215(2)
8.2 Electromagnetically Induced Transparency: Theory
217(8)
8.2.1 Density Matrix for the -System
218(2)
8.2.2 Steady-State EIT Solutions
220(2)
8.2.3 Transient EIT Solutions
222(3)
8.3 Experimental Methods
225(2)
8.4 EIT via Intervalence Band Coherence
227(3)
8.5 EIT via Exciton Spin Coherence
230(9)
8.5.1 Spin Coherence via Bound Biexciton States
233(1)
8.5.2 Spin Coherence via Unbound Two-Exciton States
234(5)
8.6 EIT via Biexcitonic Coherence
239(6)
8.7 Summary
245(2)
Acknowledgments
247(1)
References
247(4)
Index 251

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